Patents by Inventor Yuki Mitsui
Yuki Mitsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11686649Abstract: An early sign detection device includes a plurality of sensors, a data acquisition unit configured to acquire time series variation data of a physical amount from each of the plurality of sensors, a computation unit configured to compute an occurrence probability of a vibration mode involved in a sudden variant vibration of a detection subject from an amplitude or a phase of the time series variation data of the physical amount at each of the plurality of positions, and a detection unit configured to detect an early sign of the sudden variant vibration on the basis of the occurrence probability of the vibration mode. The plurality of sensors are respectively disposed at a plurality of positions of the detection subject and are each configured to measure the physical amount at a corresponding position of the plurality of positions.Type: GrantFiled: January 11, 2021Date of Patent: June 27, 2023Assignee: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Tomohito Nakamori, Keisuke Matsuyama, Yuki Mitsui
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Publication number: 20210223141Abstract: An early sign detection device includes a plurality of sensors, a data acquisition unit configured to acquire time series variation data of a physical amount from each of the plurality of sensors, a computation unit configured to compute an occurrence probability of a vibration mode involved in a sudden variant vibration of a detection subject from an amplitude or a phase of the time series variation data of the physical amount at each of the plurality of positions, and a detection unit configured to detect an early sign of the sudden variant vibration on the basis of the occurrence probability of the vibration mode. The plurality of sensors are respectively disposed at a plurality of positions of the detection subject and are each configured to measure the physical amount at a corresponding position of the plurality of positions.Type: ApplicationFiled: January 11, 2021Publication date: July 22, 2021Inventors: Tomohito NAKAMORI, Keisuke MATSUYAMA, Yuki MITSUI
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Publication number: 20210119109Abstract: A piezoelectric ceramic containing a perovskite-type compound containing at least Pb, Zr, Ti, Mn, and Nb, in which in an X-ray crystal structure analysis chart of the perovskite-type compound, there is no X-ray diffraction peak branching between a (101) plane of a main peak of a PZT tetra phase in a range of 2?=30.5° to 31.5° and a (110) plane on which an X-ray diffraction peak is in a range of 2?=30.8° to 31.8°, and a number of X-ray diffraction peaks based on the (101) plane and the (110) plane is one.Type: ApplicationFiled: December 28, 2020Publication date: April 22, 2021Inventor: Yuki Mitsui
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Publication number: 20130184346Abstract: Provided is a diacylglycerol-containing fat or oil composition in which a precipitation of crystal is inhibited even under low temperature. The fat or oil composition comprises the following components (A) and (B): (A) a polyglycerin fatty acid ester having an average polymerization degree of glycerin of 20 or more; and (B) 20 mass % or more of diacylglycerol.Type: ApplicationFiled: September 13, 2011Publication date: July 18, 2013Applicant: KAO CORPORATIONInventors: Katsuyoshi Saito, Yuki Mitsui, Junya Moriwaki
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Patent number: 8277560Abstract: A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.Type: GrantFiled: March 19, 2003Date of Patent: October 2, 2012Assignees: National Institute of Advanced Industrial Science and Technology, Canon Anelva Corporation, Ulvac, Inc., Kanto Denka Kogyo Co., Ltd., Sanyo Electric Co., Ltd., Showa Denko K.K., Sony Corporation, Tokyo Eectron Limited, Hitachi Kokusai Electric Inc., Panasonic Corporation, Mitsubishi Denki Kabushiki Kaisha, Renesas Electronics CorporationInventors: Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura, Akira Sekiya
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Patent number: 7371898Abstract: A method for producing carbonyl fluoride by continuously supplying carbon monoxide and fluorine into a reaction chamber together with a diluent gas and letting them react with each other, where hydrogen fluoride or carbonyl fluoride is used as the diluent gas.Type: GrantFiled: June 9, 2006Date of Patent: May 13, 2008Assignee: Asahi Glass Company, LimitedInventor: Yuki Mitsui
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Patent number: 7332628Abstract: The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.Type: GrantFiled: March 12, 2004Date of Patent: February 19, 2008Assignees: National Institute of Advanced Industrial Science and Technology, Asahi Glass Company, Limited, Kanto Denka Kogyo Co., Ltd., Showa Denko Kabushiki Kaisha, Daikin Industries, Ltd., Hitachi Kokusai Electric Inc.Inventors: Yuki Mitsui, Taisuke Yonemura, Yutaka Ohira, Akira Sekiya
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Patent number: 7322368Abstract: A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.Type: GrantFiled: August 26, 2002Date of Patent: January 29, 2008Inventors: Akira Sekiya, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura
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Patent number: 7138364Abstract: A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.Type: GrantFiled: January 28, 2003Date of Patent: November 21, 2006Assignees: Asahi Glass Company, Limited, Anelva Corporation, Ulvac, Inc., Kanto Denka Kogyo Co., Ltd., Sanyo Electric Co., Ltd., Sony Corporation, Daikin Industries, Ltd., Hitachi Kokusai Electric Inc., Fujitsu Limited, Matsushita Electric Industrial Co., Ltd., Renesas Technology Corp., National Institute of Advanced Industrial Science and TechnologyInventors: Yutaka Ohira, Yuki Mitsui, Taisuke Yonemura, Akira Sekiya
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Patent number: 7125573Abstract: Provided is a preventive, ameliorant or remedy for hypertension excellent in both blood pressure lowering action and blood pressure-rise suppressing action and having high safety. This preventive, ameliorant or remedy for hypertension comprises a coffee bean extract.Type: GrantFiled: July 11, 2002Date of Patent: October 24, 2006Assignee: Kao CorporationInventors: Wataru Okawa, Yuki Mitsui, Takuya Watanabe, Yasuteru Eguchi, Hirokazu Takahashi, Atsushi Suzuki
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Publication number: 20060229467Abstract: To provide a method for industrially producing COF2 in good yield. A method for producing carbonyl fluoride, which comprises continuously supplying carbon monoxide A and fluorine B together with a diluent gas into a reaction chamber 1 and letting them react with each other and which is characterized in that hydrogen fluoride or carbonyl fluoride is used as the diluent gas. An apparatus for producing carbonyl fluoride wherein carbon monoxide A and fluorine B are reacted to form carbonyl fluoride, which is characterized by comprising a means to supply carbon monoxide A, a means to supply fluorine B, a means to supply a diluent gas being hydrogen fluoride or carbonyl fluoride, and a reaction chamber.Type: ApplicationFiled: June 9, 2006Publication date: October 12, 2006Applicant: ASAHI GLASS COMPANY, LIMITEDInventor: Yuki Mitsui
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Publication number: 20060194985Abstract: The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.Type: ApplicationFiled: March 12, 2004Publication date: August 31, 2006Applicant: Research Inst. Of Innovative Tech. For The EarthInventors: Yuki Mitsui, Taisuke Yonemura, Yutaka Ohira, Akira Sekiya
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Publication number: 20050252451Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined.Type: ApplicationFiled: March 13, 2003Publication date: November 17, 2005Inventors: Tatsuro Beppu, Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura, Akira Sekiya
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Publication number: 20040255854Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber and the side wall of a piping of an exhaust path or the like at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming can also be lessened and a cost can also be reduced.Type: ApplicationFiled: April 27, 2004Publication date: December 23, 2004Inventors: Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutada Ohira, Taisuke Yonemura, Akira Sekiya
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Publication number: 20040250775Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced.Type: ApplicationFiled: April 27, 2004Publication date: December 16, 2004Inventors: Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura, Akira Sekiya
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Publication number: 20040173569Abstract: A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.Type: ApplicationFiled: December 11, 2003Publication date: September 9, 2004Inventors: Yutaka Ohira, Yuki Mitsui, Taisuke Yonemura, Akira Sekiya
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Patent number: 6787053Abstract: The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.Type: GrantFiled: May 13, 2002Date of Patent: September 7, 2004Assignees: Asahi Glass Company, Limited, Anelva Corporation, Ulvac, Inc., Kanto Denka Kogyo Co., Ltd., Sanyo Electric Co., Ltd., Sony Corporation, Daikin Industries, Ltd., Tokyo Electron Limited, NEC Electronics Corporation, Hitachi Kokusai Electric Inc., Matsushita Electric Industrial Co., Ltd., Renesas Technology Corp.Inventors: Akira Sekiya, Yuki Mitsui, Ginjiro Tomizawa, Katsuya Fukae, Yutaka Ohira, Taisuke Yonemura
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Publication number: 20040016441Abstract: The plasma cleaning gas for CVD chamber according to the present invention is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas comprises 100% by volume of fluorine gas which gas can generate plasma by electric discharge.Type: ApplicationFiled: April 30, 2003Publication date: January 29, 2004Inventors: Akira Sekiya, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura
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Publication number: 20030143846Abstract: This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors, such as those of CVD (chemical vapor deposition) equipment and also for etching films of silicon-containing compounds. Advantageously, the gas compositions are environmentally friendly and have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF4, NF3 and the like. There are provided: a gas composition for cleaning the interior of film deposition chambers contaminated with silicic deposition, which comprises F3NO or combinations of F3NO with O2 and/or inert gas(es) or which comprises FNO or a combination of FNO with O2 and/or inert gas(es); and also a similar gas composition for etching films of silicon-containing compounds, e.g. films of semiconductive materials.Type: ApplicationFiled: December 27, 2002Publication date: July 31, 2003Inventors: Akira Sekiya, Katsuya Fukae, Yuki Mitsui, Ginjiro Tomizawa
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Publication number: 20030001134Abstract: The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases.Type: ApplicationFiled: May 13, 2002Publication date: January 2, 2003Inventors: Akira Sekiya, Yuki Mitsui, Ginjiro Tomizawa, Katsuya Fukae, Yutaka Ohira, Taisuke Yonemura