Abstract: Provided is a method for inspecting surface deformation of a structure which enables easy measurement of the amount of deformation of the surface of a structure protection sheet attached to the surface of a structure such as concrete. The method for inspecting surface deformation of a structure includes: identifying a structure protection sheet attached to a surface of a structure using an individual identification means; digitally photographing a surface of a resin layer on an outermost surface of the structure protection sheet using a digital photography means; measuring a dimension of the surface of the resin layer based on image data obtained in the digital photography using a dimension measuring means; and calculating an amount of deformation of the surface of the resin layer based on data of the measured dimension using a calculation means.

Abstract: A result confirmation unit (204) computes a state space probability that is a probability that a verification target device (300) has not correctly prepared a state space having a quantum state stored therein, a Pauli measurement probability that is a probability that the verification target device (300) has not correctly performed Pauli Z measurement and Pauli X measurement, and a magic state probability that is a probability that the verification target device (300) has not generated a magic state of CCZ. Then, using the state space probability, the Pauli measurement probability, and the magic state probability, the result confirmation unit (204) computes a degree of approximation between a quantum state and the magic state of CCZ at the verification target device (300) and measurement accuracies of the Pauli Z measurement and the Pauli X measurement on the quantum state at the verification target device (300).

Abstract: A sheathed heater with improved reliability is provided. Alternatively, a substrate support device including the sheathed heater with improved reliability is provided. The sheathed heater of the present invention includes a first metal wire, a first terminal connected to a first end of the first metal wire, a first conductive flexible member connected to the first terminal and connected to a second metal wire, a second terminal connected to a second end of the first metal wire, and a second conductive flexible member connected to the second terminal and connected to a third metal wire, wherein the first conductive flexible member and the second conductive flexible member are arranged adjacent to each other.

Abstract: The invention provides a charged particle beam apparatus capable of observing a sample even when light is emitted from the sample, and a sample observation method using the charged particle beam apparatus. The charged particle beam apparatus includes: a charged particle beam source configured to irradiate a sample with a charged particle beam; a detector configured to detect charged particles emitted from the sample; and a control device configured to generate an image based on an output signal from the detector. The charged particle beam apparatus further includes a filter configured to allow at least a part of the charged particles emitted from the sample to transmit through the filter and configured to shield light emitted from the sample. The filter covers a detection surface of the detector expected from the sample.

Abstract: The invention provides a charged particle beam apparatus capable of observing a sample even when light is emitted from the sample, and a sample observation method using the charged particle beam apparatus. The charged particle beam apparatus includes: a charged particle beam source configured to irradiate a sample with a charged particle beam; a detector configured to detect charged particles emitted from the sample; and a control device configured to generate an image based on an output signal from the detector. The charged particle beam apparatus further includes a filter configured to allow at least a part of the charged particles emitted from the sample to transmit through the filter and configured to shield light emitted from the sample. The filter covers a detection surface of the detector expected from the sample.

Abstract: An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun.

Abstract: An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun.

Abstract: Landform data showing the shape of a ground surface (4) is acquired. A specification position is specified on the ground surface. A relative angle (432; 442) between the virtual plane (51) and the ground surface (4) in the at least one inspection point (433; 443) is calculated based on the landform data when the virtual plane (51) set with the reference point (423) and the at least one inspection point (433; 443) is virtually arranged such that the reference point (423) overlaps with the specification position, and such that the virtual plane (51) becomes parallel to the ground surface in the specification position. A landform determination value indicating a flatness of the landform is calculated based on the relative angle (432; 442).

Abstract: The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

Abstract: A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

Abstract: A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

Abstract: A theme is to provide a field-effect light-emitting device that can obtain a long-term reliability and broaden a selectivity of emission wavelength. The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.