Patents by Inventor Yuki Togashi
Yuki Togashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210140943Abstract: It is intended to reveal a polynucleotide serving as a novel causative gene of a cancer and, on the basis of this finding, to provide a method for detecting the polynucleotide or a polypeptide encoded thereby, a kit and a primer set for the detection, a method for screening for a substance that inhibits the polypeptide, and a pharmaceutical composition for the treatment of a cancer, containing the inhibiting substance. The detection method of the present invention detects a BRAF fusion protein or a fusion gene encoding the fusion protein, or a PXN or GMDS fusion protein or a fusion gene encoding the fusion protein in a digestive organ-derived sample obtained from a subject.Type: ApplicationFiled: January 8, 2021Publication date: May 13, 2021Inventors: Kengo Takeuchi, Seiji Sakata, Yuki Togashi, Naoya Fujita, Ryohei Katayama
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Patent number: 10921311Abstract: It is intended to reveal a polynucleotide serving as a novel causative gene of a cancer and, on the basis of this finding, to provide a method for detecting the polynucleotide or a polypeptide encoded thereby, a kit and a primer set for the detection, a method for screening for a substance that inhibits the polypeptide, and a pharmaceutical composition for the treatment of a cancer, containing the inhibiting substance. The detection method of the present invention detects a BRAF fusion protein or a fusion gene encoding the fusion protein, or a PXN or GMDS fusion protein or a fusion gene encoding the fusion protein in a digestive organ-derived sample obtained from a subject.Type: GrantFiled: January 13, 2017Date of Patent: February 16, 2021Assignee: JAPANESE FOUNDATION FOR CANCER RESEARCHInventors: Kengo Takeuchi, Seiji Sakata, Yuki Togashi, Naoya Fujita, Ryohei Katayama
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Patent number: 10705087Abstract: A polynucleotide, which is a novel causative gene for cancer, is elucidated, and, based on this finding, provided are a method for detecting the polynucleotide, or a polypeptide encoded by the polynucleotide; a kit and a primer set for the detection; a method for screening an inhibitor of the polypeptide; and a pharmaceutical composition for treating a cancer containing the inhibitor. In the detection method of the present invention, an NTRK3 fusion protein, or a fusion gene encoding the fusion protein, or an ETV6 fusion protein, or a fusion gene encoding the fusion protein, in a sample derived from the digestive system obtained from a subject, is detected.Type: GrantFiled: July 25, 2014Date of Patent: July 7, 2020Assignee: JAPANESE FOUNDATION FOR CANCER RESEARCHInventors: Kengo Takeuchi, Yuki Togashi, Seiji Sakata, Satoko Baba
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Publication number: 20190033293Abstract: It is intended to reveal a polynucleotide serving as a novel causative gene of a cancer and, on the basis of this finding, to provide a method for detecting the polynucleotide or a polypeptide encoded thereby, a kit and a primer set for the detection, a method for screening for a substance that inhibits the polypeptide, and a pharmaceutical composition for the treatment of a cancer, containing the inhibiting substance. The detection method of the present invention detects a BRAF fusion protein or a fusion gene encoding the fusion protein, or a PXN or GMDS fusion protein or a fusion gene encoding the fusion protein in a digestive organ-derived sample obtained from a subject.Type: ApplicationFiled: January 13, 2017Publication date: January 31, 2019Inventors: Kengo Takeuchi, Seiji Sakata, Yuki Togashi, Naoya Fujita, Ryohei Katayama
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Patent number: 9496267Abstract: In one device, a first space partitioned by first and second line patters is filled with a multilayer film that is composed of a first silicon film having a high impurity concentration relative to a standard plug impurity concentration and a second silicon film having a low impurity concentration relative to the standard plug impurity concentration, and is divided by forming a groove using a mask film on the side wall of the second line pattern. As a result, expansion of a seam, which is formed only on the second silicon film having a low impurity concentration, is suppressed. After that, an isolation insulating film is embedded in the groove and impurity diffusion is carried out by a heat treatment, so that divided plugs as a whole are made to have the standard plug impurity concentration.Type: GrantFiled: May 9, 2014Date of Patent: November 15, 2016Assignee: LONGITUDE SEMICONDUCTOR S.A.R.L.Inventors: Kazuaki Tonari, Yuki Togashi
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Publication number: 20160305943Abstract: A polynucleotide, which is a novel causative gene for cancer, is elucidated, and, based on this finding, provided are a method for detecting the polynucleotide, or a polypeptide encoded by the polynucleotide; a kit and a primer set for the detection; a method for screening an inhibitor of the polypeptide; and a pharmaceutical composition for treating a cancer containing the inhibitor. In the detection method of the present invention, an NTRK3 fusion protein, or a fusion gene encoding the fusion protein, or an ETV6 fusion protein, or a fusion gene encoding the fusion protein, in a sample derived from the digestive system obtained from a subject, is detected.Type: ApplicationFiled: July 25, 2014Publication date: October 20, 2016Applicant: JAPANESE FOUNDATION FOR CACER RESEARCHInventors: Kengo TAKEUCHI, Yuki TOGASHI, Seiji SAKATA, Satoko BABA
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Publication number: 20160118388Abstract: A first space partitioned by first and second line patters (52, 53) is filled with a multilayer film that is composed of a first silicon film (55) having a high impurity concentration (a first concentration) relative to a standard plug impurity concentration (a third concentration) and a second silicon film (57) having a low impurity concentration (a second concentration) relative to the standard plug impurity concentration, and is divided by forming a groove (59) using a mask film (58) on the side wall of the second line pattern (53). As a result, expansion of a seam, which is formed only on the second silicon film (57) having a low impurity concentration, is suppressed. After that, an isolation insulating film is embedded in the groove and impurity diffusion is carried out by a heat treatment, so that divided plugs (60) as a whole are made to have the third concentration.Type: ApplicationFiled: May 9, 2014Publication date: April 28, 2016Inventors: Kazuaki TONARI, Yuki TOGASHI
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Patent number: 8847400Abstract: A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.Type: GrantFiled: February 29, 2012Date of Patent: September 30, 2014Assignee: PS4 Luxco S.A.R.L.Inventors: Osamu Fujita, Yuki Togashi
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Publication number: 20120199984Abstract: A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.Type: ApplicationFiled: February 29, 2012Publication date: August 9, 2012Applicant: Elpida Memory, Inc.Inventors: Osamu FUJITA, Yuki TOGASHI
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Publication number: 20110189828Abstract: A silicon layer is formed on a silicon substrate by an epitaxial growth, and, then a surface of the silicon layer is oxidized. The surface of the silicon layer is cleaned, to remove foreign material generated on the surface of the silicon layer during the epitaxial growth.Type: ApplicationFiled: December 13, 2010Publication date: August 4, 2011Applicant: Elpida Memory, Inc.Inventors: Nobuyuki Sako, Eiji Hasunuma, Yuki Togashi
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Patent number: 7888737Abstract: A semiconductor device includes: a monocrystalline substrate; an inter-layer film formed on the monocrystalline substrate; a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate; a sidewall formed on an inner surface of the contact hole; a plurality of first monocrystalline layers which include few defects, fill the contact hole, and cover the inter-layer film; and a plurality of second monocrystalline layers which include many defects and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.Type: GrantFiled: January 27, 2009Date of Patent: February 15, 2011Assignee: Elpida Memory, Inc.Inventors: Hiroyuki Fujimoto, Yuki Togashi
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Publication number: 20090212365Abstract: A semiconductor device includes: a monocrystalline substrate; an inter-layer film formed on the monocrystalline substrate; a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate; a sidewall formed on an inner surface of the contact hole; a plurality of first monocrystalline layers which include few defects, fill the contact hole, and cover the inter-layer film; and a plurality of second monocrystalline layers which include many defects and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.Type: ApplicationFiled: January 27, 2009Publication date: August 27, 2009Applicant: ELPIDA MEMORY, INC.Inventors: Hiroyuki FUJIMOTO, Yuki TOGASHI
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Sample injection apparatus and liquid chromatography apparatus having the sample injection apparatus
Patent number: 7500386Abstract: A sample injection apparatus and a liquid chromatography apparatus including the sample injection apparatus are provided. The sample injection apparatus includes a sampling vessel into which a sample is supplied, a sampling needle for aspirating and ejecting the sample, a cleaning part into which a cleaning liquid for cleaning at least the sampling needle is supplied, a sample injection part for injecting the sample ejected from the sampling needle into a moving liquid, and a needle transfer part for transferring the sampling needle among the sampling vessel, the cleaning part and the sample injection part, wherein the cleaning part includes an ultrasonic vibrator for generating an ultrasonic wave in the cleaning liquid.Type: GrantFiled: February 4, 2008Date of Patent: March 10, 2009Assignee: Shiseido Company, Ltd.Inventors: Yuki Togashi, Osamu Shirota, Aya Ohkubo -
Sample injection apparatus and liquid chromatography apparatus having the sample injection apparatus
Publication number: 20080141762Abstract: A sample injection apparatus and a liquid chromatography apparatus including the sample injection apparatus are provided. The sample injection apparatus includes a sampling vessel into which a sample is supplied, a sampling needle for aspirating and ejecting the sample, a cleaning part into which a cleaning liquid for cleaning at least the sampling needle is supplied, a sample injection part for injecting the sample ejected from the sampling needle into a moving liquid, and a needle transfer part for transferring the sampling needle among the sampling vessel, the cleaning part and the sample injection part, wherein the cleaning part includes an ultrasonic vibrator for generating an ultrasonic wave in the cleaning liquid.Type: ApplicationFiled: February 4, 2008Publication date: June 19, 2008Applicant: Shiseido Company, Ltd.Inventors: Yuki Togashi, Osamu Shirota, Aya Ohkubo -
Patent number: 7337653Abstract: A sample injection apparatus and sample injection method capable of sufficiently reducing carry-over, having simple cleaning means for a short cleaning time period, a small influence of vibration of the cleaning means, and a small error in the amount of injected sample and preventing the durability of a sampling needle from being lowered, and a liquid chromatography apparatus having the sample injection apparatus are provided.Type: GrantFiled: May 14, 2004Date of Patent: March 4, 2008Assignee: Shiseido Company, Ltd.Inventors: Yuki Togashi, Osamu Shirota, Aya Ohkubo
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Patent number: 7298002Abstract: A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.Type: GrantFiled: June 24, 2005Date of Patent: November 20, 2007Assignee: Elpida Memory Inc.Inventors: Hiroyuki Kitamura, Yuki Togashi, Hiroyasu Kitajima, Noriaki Ikeda, Yoshitaka Nakamura, Eiichiro Kakehashi
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Publication number: 20070210365Abstract: A semiconductor device includes a cylindrical capacitor. A size of hemispherical silicon grains (HSGs) formed in a straight portion of the cylindrical capacitor is smaller than a size of HSGs formed in a bowing portion of the cylindrical capacitor.Type: ApplicationFiled: February 27, 2007Publication date: September 13, 2007Applicant: ELPIDA MEMORY, INC.Inventors: Yuki TOGASHI, Hiroyuki KITAMURA
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Publication number: 20060213257Abstract: A sample injection apparatus and sample injection method capable of sufficiently reducing carry-over, having simple cleaning means for a short cleaning time period, a small influence of vibration of the cleaning means, and a small error in the amount of injected sample and preventing the durability of a sampling needle from being lowered, and a liquid chromatography apparatus having the sample injection apparatus are provided.Type: ApplicationFiled: May 14, 2004Publication date: September 28, 2006Applicant: Shiseido Company, Ltd.Inventors: Yuki Togashi, Osamu Shirota, Aya Ohkubo
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Publication number: 20060022251Abstract: A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.Type: ApplicationFiled: June 24, 2005Publication date: February 2, 2006Inventors: Hiroyuki Kitamura, Yuki Togashi, Hiroyasu Kitajima, Noriaki Ikeda, Yoshitaka Nakamura, Eiichiro Kakehashi