Patents by Inventor Yukiharu Miwa

Yukiharu Miwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power MOS FET with carrier lifetime killer
    Patent number: 4855799
    Abstract: In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree. C.
    Type: Grant
    Filed: December 22, 1987
    Date of Patent: August 8, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hirohito Tanabe, Yu Ohata, Kazuaki Suzuki, Yukiharu Miwa, Yoshihito Nakayama
  • Method of manufacturing power MOSFET
    Patent number: 4777149
    Abstract: In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree.C.
    Type: Grant
    Filed: December 22, 1987
    Date of Patent: October 11, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hirohito Tanabe, Yu Ohata, Kazuaki Suzuki, Yukiharu Miwa, Yoshihito Nakayama