Abstract: A voltage non-linear resistor which makes a SiC-based varistor exhibiting low apparent relative dielectric constant and the voltage nonlinearity coefficient ? at the same level as ZnO-based varistors is provided. The voltage non-linear resistor includes semiconductive SiC particles doped with an impurity, each of the semiconductive SiC particles having an oxide layer formed on the surface thereof. The oxide layer has a thickness in the range of about 5 to 100 nm and has aluminum diffused therein. A method for making the voltage non-linear resistor and a varistor using the same are also provided.

Abstract: A voltage nonlinear resistor is composed of an aggregate of silicon carbide particles doped with impurities, in which oxygen and at least one of aluminum and boron are diffused in the vicinity of the surfaces of the silicon carbide particles, the diffusion length of the oxygen is about 100 nm or less from the surfaces of the silicon carbide particles, and the diffusion length of at least one of the aluminum and the boron is in the range of about 5 to 100 nm from the surfaces of the silicon carbide particles. A method for fabricating a voltage nonlinear resistor and a varistor using a voltage nonlinear resistor are also disclosed.

Abstract: A varistor includes a voltage-nonlinear resistor and varistor electrodes provided on the upper and lower surfaces of the voltage-nonlinear resistor. The voltage-nonlinear resistor is primarily composed of SiC (silicon carbide) particles which are doped with at least one dopant such as N (nitrogen) and P (phosphorus). The varistor electrodes are composed of a metal, e.g., Ag, Pd, Pt, Al, Ni or Cu. The SiC particles of the voltage-nonlinear resistor further contain at least one element of Al (aluminum) and B (boron) in an amount of about 0.01 to 100 parts by weight with respect to 100 parts by weight of the SiC particles.

Abstract: A voltage nonlinear resistor is composed of an aggregate of silicon carbide particles doped with impurities, in which oxygen and at least one of aluminum and boron are diffused in the vicinity of the surfaces of the silicon carbide particles, the diffusion length of the oxygen is about 100 nm or less from the surfaces of the silicon carbide particles, and the diffusion length of at least one of the aluminum and the boron is in the range of about 5 to 100 nm from the surfaces of the silicon carbide particles. A method for fabricating a voltage nonlinear resistor and a varistor using a voltage nonlinear resistor are also disclosed.

Abstract: A voltage nonlinear resistor is composed of an aggregate of silicon carbide particles doped with impurities, in which oxygen and at least one of aluminum and boron are diffused in the vicinity of the surfaces of the silicon carbide particles, the diffusion length of the oxygen is about 100 nm or less from the surfaces of the silicon carbide particles, and the diffusion length of at least one of the aluminum and the boron is in the range of about 5 to 100 nm from the surfaces of the silicon carbide particles. A method for fabricating a voltage nonlinear resistor and a varistor using a voltage nonlinear resistor are also disclosed.

Abstract: A voltage non-linear resistor which makes a SiC-based varistor exhibiting low apparent relative dielectric constant and the voltage nonlinearity coefficient &agr; at the same level as ZnO-based varistors is provided. The voltage non-linear resistor includes semiconductive SiC particles doped with an impurity, each of the semiconductive SiC particles having an oxide layer formed on the surface thereof. The oxide layer has a thickness in the range of about 5 to 100 nm and has aluminum diffused therein. A method for making the voltage non-linear resistor and a varistor using the same are also provided.

Abstract: A voltage non-linear resistor which makes a SiC-based varistor exhibiting low apparent relative dielectric constant and the voltage nonlinearity coefficient a at the same level as ZnO-based varistors is provided. The voltage non-linear resistor includes semiconductive SiC particles doped with an impurity, each of the semiconductive SiC particles having an oxide layer formed on the surface thereof. The oxide layer has a thickness in the range of about 5 to 100 nm and has aluminum diffused therein. A method for making the voltage non-linear resistor and a varistor using the same are also provided.

Abstract: A voltage non-linear resistor which makes a SiC-based varistor exhibiting low apparent relative dielectric constant and the voltage nonlinearity coefficient &agr; at the same level as ZnO-based varistors is provided. The voltage non-linear resistor includes semiconductive SiC particles doped with an impurity, each of the semiconductive SiC particles having an oxide layer formed on the surface thereof. The oxide layer has a thickness in the range of about 5 to 100 nm and has aluminum diffused therein. A method for making the voltage non-linear resistor and a varistor using the same are also provided.

Abstract: A voltage nonlinear resistor is composed of an aggregate of silicon carbide particles doped with impurities, in which oxygen and at least one of aluminum and boron are diffused in the vicinity of the surfaces of the silicon carbide particles, the diffusion length of the oxygen is about 100 nm or less from the surfaces of the silicon carbide particles, and the diffusion length of at least one of the aluminum and the boron is in the range of about 5 to 100 nm from the surfaces of the silicon carbide particles. A method for fabricating a voltage nonlinear resistor and a varistor using a voltage nonlinear resistor are also disclosed.