Abstract: A guide vane attachment structure including a first fitting portion formed in a vane joint surface of a guide vane, a support member whose constituent material is a metal is integrally connected to a fan frame, and a second fitting portion to be fitted to the first fitting portion formed in a support joint surface of the support member.

Abstract: A guide vane attachment structure including a first fitting portion formed in a vane joint surface of a guide vane, a support member whose constituent material is a metal is integrally connected to a fan frame, and a second fitting portion to be fitted to the first fitting portion formed in a support joint surface of the support member.

Abstract: The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained.

Abstract: The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained.

Abstract: A semiconductor light emitting device includes an n-type nitride semiconductor layer 3 formed on one surface side of a single-crystal substrate 1 for epitaxial growth through a first buffer layer 2, an emission layer 5 formed on a surface side of the n-type nitride semiconductor layer 3, and a p-type nitride semiconductor layer 6 formed on a surface side of the emission layer 5. The emission layer 5 has an AlGaInN quantum well structure, and a second buffer layer 4 having the same composition as a barrier layer 5a of the emission layer 5 is provided between the n-type nitride semiconductor layer 3 and the emission layer 5. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGaInN as a material of the emission layer.

Abstract: The semiconductor light emitting device of the present invention comprises an n-type nitride semiconductor layer 3 formed on one surface side of a single-crystal substrate 1 for epitaxial growth through a first buffer layer 2, an emission layer 5 formed on a surface side of the n-type nitride semiconductor layer 3, and a p-type nitride semiconductor layer 6 formed on a surface side of the emission layer 5. The emission layer 5 has an AlGaInN quantum well structure, and a second buffer layer 4 having the same composition as a barrier layer 5a of the emission layer 5 is provided between the n-type nitride semiconductor layer 3 and the emission layer 5. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGaInN as a material of the emission layer.

Abstract: An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3.

Abstract: A vacuum vapor deposition apparatus includes a vacuum chamber having a plurality of vapor sources and a heater for heating the vapor sources to achieve vacuum vapor deposition on a surface of at least one substrate within the vacuum chamber. At least one of the vapor sources utilizes an organic material. A hot wall, which encloses the vapor sources and a space in which the vapor sources and the substrate confront each other, is heated to a temperature at which the organic material is neither deposited nor decomposed. The organic material is vapor deposited on the surface of the substrate by heating the vapor sources while the vapor sources and the substrate are moved relative to each other.

Abstract: A field emission-type electron source (10) is provided with a conductive substrate (1), a semiconductor layer formed on a surface of the conductive substrate (1), at least a part of the semiconductor layer being made porous, and a conductive thin film (7) formed on the semiconductor layer. Electrons injected into the conductive substrate (1) are emitted from the conductive thin film (7) through the semiconductor layer by applying a voltage between the conductive thin film (7) and the conductive substrate (1) in such a manner that the conductive thin film (7) acts as a positive electrode against the conductive substrate (1). The semiconductor layer includes a porous semiconductor layer (6) in which columnar structures (21) and porous structures (25) composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film (22,24).

Abstract: A vacuum vapor deposition apparatus includes a vacuum chamber having a plurality of vapor sources and a heater for heating the vapor sources to achieve vacuum vapor deposition on a surface of at least one substrate within the vacuum chamber. At least one of the vapor sources utilizes an organic material. A hot wall, which encloses the vapor sources and a space in which the vapor sources and the substrate confront each other, is heated to a temperature at which the organic material is neither deposited nor decomposed. The organic material is vapor deposited on the surface of the substrate by heating the vapor sources while the vapor sources and the substrate are moved relative to each other.

Abstract: A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.

Abstract: A solid lubrication type self-aligning roller bearing is low in frictional torque and high in high-speed rotation performance. Only the space between fingers of the retainer protruding into the spaces between the outer ring and adjacent rollers arranged in two rows is filled with a lubricating composition manufactured by solidifying a mixture of an ultra-high-molecular-weight polyolefin and a grease to reduce the number of contact portions of the solid lubricating composition with the outer ring and the rollers. It is thus possible to considerably reduce torque and heat buildup due to sliding friction at the contact portions.

Abstract: The object of the invention is a composition for permanent waving of human hair comprising, as sole or main reducing agent one or several polyglycol monothioglycollates or lactates of the general formula ##STR1## wherein R denotes a hydrogen atom or a methyl group, X represents an ethoxy or propoxy group, and n is a number from 2 to 5. These compositions have a low characteristic smell, good waving properties, and an extremely low skin sensitizing potential.

Abstract: The object of the invention is a new isomer mixture of 3-hydroxybutyl monothioglycollate and 3-hydroxy-1-methyl propyl monothioglycollate in a weight proportion of about 1.5:1 to 4:1, preferably about 2:1 to about 3:1, comprising less than 5%, preferably less than 2% by wt., of 1,3-butanediol thioglycollate, and its use as the sole or main reducing agent in compositions for permanent waving of human hair. The compositions have reduced smell, good waving properties and an extremely low sensitizing potential on human skin.

Abstract: A getter for use in a sealed contact chamber consists of a porous getter material which acts to adsorb substances which could create resistive films on electrical contacts. By disposing such a getter within the contact chamber of a switching device, such as an electromagnetic relay, molecules of, for instance, organic compounds, may be selectively and over long terms adsorbed to the getter and thus kept away from the contacts. The selective adsorption of such molecules is achieved by a porous getter material in which the majority of the pores have diameters greater than 3 nm and smaller than 100 nm, with the mean value of pore diameter ranging from about 7 nm to about 20 nm. The getter material may be substantially Al.sub.2 O.sub.3.