Abstract: A photoelectric conversion apparatus includes a pulse shaping circuit that shapes an output from a diode of avalanche amplification type into a pulse, and a pulse conversion circuit that converts a pulse signal output from the pulse shaping circuit. The pulse conversion circuit converts a pulse signal having a first amplitude and output from the pulse shaping circuit into a pulse signal having a second amplitude smaller than the first amplitude.

Abstract: A photoelectric conversion apparatus includes a pulse shaping circuit that shapes an output from a diode of avalanche amplification type into a pulse, and a pulse conversion circuit that converts a pulse signal output from the pulse shaping circuit. The pulse conversion circuit converts a pulse signal having a first amplitude and output from the pulse shaping circuit into a pulse signal having a second amplitude smaller than the first amplitude.

Abstract: A photoelectric conversion apparatus includes a pixel and a counter circuit. The pixel includes a first avalanche photodiode and a second avalanche photodiode having different sensitivity to light. The counter circuit is configured to count a first signal based on charges generated in the first avalanche photodiode, and a second signal based on charges generated in the second avalanche photodiode. Processing on the count value is different between a case where a count value output from the counter circuit is larger than a threshold value and a case where the count value output from the counter circuit is smaller than the threshold value.

Abstract: A photoelectric conversion device includes a plurality of pixels each including an avalanche diode, a quench unit reducing the avalanche multiplication of the avalanche diode, a pulse conversion unit converting an output signal of the avalanche diode into pulses, and a signal generation unit generating an accumulation signal obtained by accumulating the number of pulses, a detection unit detecting whether or not the width of the pulse is not smaller than a predetermined width, and a voltage control unit controlling a reverse bias voltage applied to the avalanche diode within a range not lower than the breakdown voltage of the avalanche diode based on the result of the detection. The voltage control unit lowers the reverse bias voltage within a range not lower than the breakdown voltage when the accumulation value of pixels whose pulse width is not smaller than a predetermined width is not smaller than a predetermined value.

Abstract: A photoelectric conversion apparatus includes a waveform shaping circuit, a reference circuit, and a counter. The waveform shaping circuit is configured to generate a first pulse signal based on a signal output from an avalanche diode. The reference circuit is configured to generate a second pulse signal without depending on incident light. The counter is connected to the waveform shaping circuit and the reference circuit to count a number of occurrences of a pulse signal. The pulse signal is based on at least one of the first pulse signal and the second pulse signal, and is input to the counter.

Abstract: A photoelectric conversion device includes an avalanche multiplying photodiode, a signal generation unit that includes a control unit configured to control an applied voltage to the photodiode and generates a photon detection pulse based on an output generated by incidence of a photon to the photodiode, and a counter that counts the photon detection pulse output from the signal generation unit, and the counter outputs a setting value detection signal when a count value of the photon detection pulse reaches a predetermined setting value, and in response to receiving the setting value detection signal, the control unit controls the applied voltage to the photodiode so as to stop generation of an avalanche current in the photodiode.

Abstract: A photoelectric conversion apparatus includes a pulse shaping circuit that shapes an output from a diode of avalanche amplification type into a pulse, and a pulse conversion circuit that converts a pulse signal output from the pulse shaping circuit. The pulse conversion circuit converts a pulse signal having a first amplitude and output from the pulse shaping circuit into a pulse signal having a second amplitude smaller than the first amplitude.

Abstract: A photoelectric conversion apparatus includes a pulse shaping circuit that shapes an output from a diode of avalanche amplification type into a pulse, and a pulse conversion circuit that converts a pulse signal output from the pulse shaping circuit. The pulse conversion circuit converts a pulse signal having a first amplitude and output from the pulse shaping circuit into a pulse signal having a second amplitude smaller than the first amplitude.

Abstract: A photoelectric conversion apparatus includes a first diode which is an avalanche multiplication-type and a second diode which is an avalanche multiplication-type formed within a semiconductor substrate, a first transistor forming a first quench element, and a second transistor forming a second quench element. The first transistor and the second transistor are disposed between the first diode and the second diode in a planar view. The first transistor and the second transistor are disposed in a common semiconductor well region formed within the semiconductor substrate.

Abstract: A photoelectric conversion device includes an avalanche multiplying photodiode, a signal generation unit that includes a control unit configured to control an applied voltage to the photodiode and generates a photon detection pulse based on an output generated by incidence of a photon to the photodiode, and a counter that counts the photon detection pulse output from the signal generation unit, and the counter outputs a setting value detection signal when a count value of the photon detection pulse reaches a predetermined setting value, and in response to receiving the setting value detection signal, the control unit controls the applied voltage to the photodiode so as to stop generation of an avalanche current in the photodiode.

Abstract: In an aspect of the present disclosure, a photoelectric conversion apparatus comprising includes a scan unit and a plurality of pixels each including a photoelectric conversion unit and configured to output a digital signal corresponding to an electric charge generated by the photoelectric conversion unit. The scan unit performs a scan to read the digital signal from the plurality of pixels and an operation of inputting a signal based on the digital signal output from the plurality of pixels to the plurality of pixels.

Abstract: Provided is a semiconductor device including: first signal generation units arranged so as to form rows and columns and corresponding to pixels configured to output a signal in response to incidence of light, each of the first signal generation units being configured to output a first digital signal in response to an output from a corresponding pixel; second signal generation units arranged corresponding to at least a part of the rows and the columns, each of the second signal generation units being configured to output a second digital signal having a predetermined digital value; and a readout unit configured to output a signal based on at least one of the first digital signal and the second digital signal that is output from a selected part of the first signal generation units and the second signal generation units.

Abstract: A photoelectric conversion apparatus includes: a first substrate including an avalanche photodiode; and a second substrate, in which the first substrate and the second substrate are stacked on each other, and further includes: a temperature detection unit arranged in at least one of the first substrate and the second substrate and having an output characteristic depending on a temperature; and a temperature value generating circuit arranged outside the first substrate and configured to convert output from the temperature detection unit into a temperature value signal that is a signal indicating temperature information.

Abstract: A photoelectric conversion device includes a plurality of pixels each including an avalanche diode, a quench unit reducing the avalanche multiplication of the avalanche diode, a pulse conversion unit converting an output signal of the avalanche diode into pulses, and a signal generation unit generating an accumulation signal obtained by accumulating the number of pulses, a detection unit detecting whether or not the width of the pulse is not smaller than a predetermined width, and a voltage control unit controlling a reverse bias voltage applied to the avalanche diode within a range not lower than the breakdown voltage of the avalanche diode based on the result of the detection. The voltage control unit lowers the reverse bias voltage within a range not lower than the breakdown voltage when the accumulation value of pixels whose pulse width is not smaller than a predetermined width is not smaller than a predetermined value.

Abstract: An embodiment includes a plurality of pixels each including a light receiving unit that outputs a pulse in response to incidence of a photon, and a signal generation unit that generates a signal in accordance with the number of pulses output from the light receiving unit, wherein the plurality of pixels includes a first pixel in which an upper limit value of a signal generated by the signal generation unit is a first value and a second pixel in which an upper limit value of a signal generated by the signal generation unit is a second value that is smaller than the first value.

Abstract: A photoelectric conversion apparatus includes a pixel and a counter circuit. The pixel includes a first avalanche photodiode and a second avalanche photodiode having different sensitivity to light. The counter circuit is configured to count a first signal based on charges generated in the first avalanche photodiode, and a second signal based on charges generated in the second avalanche photodiode. Processing on the count value is different between a case where a count value output from the counter circuit is larger than a threshold value and a case where the count value output from the counter circuit is smaller than the threshold value.

Abstract: A disclosed photoelectric conversion device includes a plurality of pixels each including a light receiving portion that outputs a pulse in response to incidence of a photon and a signal generation unit that outputs a signal based on output from the light receiving portion, and each of the plurality of pixels further includes a detection unit that detects whether or not a width of a pulse output from the light receiving portion exceeds a predetermined threshold value.

Abstract: An electron beam detection element according to an exemplary embodiment includes a plurality of unit cells. Each of the plurality of unit cells includes a diode of avalanche multiplication type and a plurality of memories. The diode of avalanche multiplication type is configured to detect an electron beam. The plurality of memories store signals of different frames respectively, each of the signals being output from the diode.

Abstract: A photoelectric conversion device includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, and a plurality of output lines to which signals from the plurality of pixels are output, and each of the plurality of pixels includes a light receiving unit that outputs a pulse in response to incidence of a photon and a signal generation unit that, based on output from the light receiving unit, generates a pixel signal output to each of the output lines. The signal generation unit includes a count unit that generates a count signal indicating a count value of pulses output from the light receiving unit and a comparison unit that compares the count value indicated by the count signal with a predetermined threshold value, and the signal generation unit outputs a signal in accordance with a result of comparison performed by the comparison unit.

Abstract: A photoelectric conversion device includes: an avalanche amplification-type diode; a pulse shaping circuit that shapes output from the avalanche amplification-type diode into a pulse; and a signal processing circuit that processes a signal corresponding to output from the pulse shaping circuit. A first base body in which the avalanche amplification-type diode is provided and a second base body in which the signal processing circuit is provided are stacked on each other, and the pulse shaping circuit is provided in the first base body.