Patents by Inventor Yukihisa Hirotsugu

Yukihisa Hirotsugu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pin photodiode and manufacturing method of same
    Patent number: 8138532
    Abstract: The objective of this invention is to provide a semiconductor device containing a photodiode and having stable, high sensitivity with respect to short wavelength light near 405 nm, and a manufacturing method for said semiconductor device. PIN photodiode (100C) has the following layers formed on silicon substrate (110): p-type silicon region (112), n-type silicon layer (114), field oxide film (118), silicon oxide film (120c) that covers the surface of the active region, and silicon nitride film (122c) that covers silicon oxide film (120c). Said field oxide film (118) contains extending portions (160) extending to the interior of the active region; the side portions of extending portions (160) are connected to silicon oxide film (120c), and the exposed surface portions of extending portions (160) become regions for hydrogen diffusion.
    Type: Grant
    Filed: July 28, 2009
    Date of Patent: March 20, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: Hiroyuki Tomomatsu, Yukihisa Hirotsugu
  • PIN PHOTODIODE AND MANUFACTURING METHOD OF SAME
    Publication number: 20100019293
    Abstract: The objective of this invention is to provide a semiconductor device containing a photodiode and having stable, high sensitivity with respect to short wavelength light near 405 nm, and a manufacturing method for said semiconductor device. PIN photodiode (100C) has the following layers formed on silicon substrate (110): p-type silicon region (112), n-type silicon layer (114), field oxide film (118), silicon oxide film (120c) that covers the surface of the active region, and silicon nitride film (122c) that covers silicon oxide film (120c). Said field oxide film (118) contains extending portions (160) extending to the interior of the active region; the side portions of extending portions (160) are connected to silicon oxide film (120c), and the exposed surface portions of extending portions (160) become regions for hydrogen diffusion.
    Type: Application
    Filed: July 28, 2009
    Publication date: January 28, 2010
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Hiroyuki TOMOMATSU, Yukihisa HIROTSUGU
  • Methods and apparatus to monitor hard-disk drive head position
    Publication number: 20080204922
    Abstract: Methods and apparatus to monitor hard-disk drive head position are described.
    Type: Application
    Filed: February 28, 2007
    Publication date: August 28, 2008
    Inventors: Motomu Hashizume, Hiroyuki Mukai, Yukihisa Hirotsugu, Hidetaka Kuroiwa, Naoko Jinguji
  • Preamplifier system having programmable resistance
    Patent number: 7152800
    Abstract: A biasing scheme is disclosed that helps reduce current noise in an associated device, such as, for example, a magneto-resistive device. The biasing scheme provides for setting a resistance path in a preamplifier, which is operative to energize the associated device, based on a biasing current that is to be used with associated device. Alternatively or additionally, the resistance path can be set based on a resistance of the associated device. As a result of setting the resistance path in this manner, noise through the associated device can be mitigated during its energization.
    Type: Grant
    Filed: August 22, 2002
    Date of Patent: December 26, 2006
    Assignee: Texas Instruments Incorporated
    Inventors: Indumini Ranmuthu, Yukihisa Hirotsugu, Mark Wolfe
  • Differential preamplifier having balanced resistor network
    Patent number: 7046044
    Abstract: The present invention comprises a pair of circuits (171, 172) within the first stage (100) of an AC signal pre-amplifier. The present invention reduces the current mismatch at the base of the first stage transistors (141, 142, 143, 144) resulting in faster switching times by reducing input stage offset and, hence improving input dynamic range.
    Type: Grant
    Filed: February 5, 2004
    Date of Patent: May 16, 2006
    Assignee: Texas Instruments Incorporated
    Inventors: Yukihisa Hirotsugu, Naoyuki Hanajima, Hisao Ogiwara
  • Differential preamplifier having balanced resistor network
    Publication number: 20050174168
    Abstract: The present invention comprises a pair of circuits (171, 172) within the first stage (100) of an AC signal pre-amplifier. The present invention reduces the current mismatch at the base of the first stage transistors (141, 142, 143, 144) resulting in faster switching times by reducing input stage offset and, hence improving input dynamic range.
    Type: Application
    Filed: February 5, 2004
    Publication date: August 11, 2005
    Inventors: Yukihisa Hirotsugu, Naoyuki Hanajima, Hisao Ogiwara
  • Preamplifier system having programmable resistance
    Publication number: 20040035941
    Abstract: A biasing scheme is disclosed that helps reduce current noise in an associated device, such as, for example, a magneto-resistive device. The biasing scheme provides for setting a resistance path in a preamplifier, which is operative to energize the associated device, based on a biasing current that is to be used with associated device. Alternatively or additionally, the resistance path can be set based on a resistance of the associated device. As a result of setting the resistance path in this manner, noise through the associated device can be mitigated during its energization.
    Type: Application
    Filed: August 22, 2002
    Publication date: February 26, 2004
    Inventors: Indumini Ranmuthu, Yukihisa Hirotsugu, Mark Wolfe