Abstract: A laminated film containing a gas barrier layer and an inorganic polymer layer laminated on a resin substrate, wherein a Y value calculated from a transmission electron microscope image of a cross section of the inorganic polymer layer by the following procedures (a) to (d) is 0.220 or less: (a) Calculating a standard deviation (?) of the contrast of an electron beam-unirradiated part of the inorganic polymer layer; (b) Dividing an electron beam-irradiated part of the inorganic polymer layer into twenty parts having a film thickness equal in a film thickness direction, and calculating a standard deviation (an: standard deviation of nth division, n=1˜20) of the contrast of each divided part; (c) Calculating Xn (n=1˜20) of each divided part from the expression (1): Xn=?n/? (n=1˜20) . . . (1); and (d) A standard deviation of X3 to X18 is defined as Y.

Abstract: An object of the present invention is to provide a laminated film which can prevent permeation of the water vapor at the higher level, and the present invention provides a laminated film comprising at least a gas barrier layer and an inorganic polymer layer being laminated on a resin substrate, wherein a Y value calculated from a transmission electron microscope image of a cross section of the inorganic polymer layer by the following procedures (a) to (d) is 0.220 or less. (a) A standard deviation (?) of the contrast of an electron beam-unirradiated part of the inorganic polymer layer is calculated. (b) An electron beam-irradiated part of the inorganic polymer layer is divided into twenty so that divided ones have a film thickness equal in a film thickness direction, and a standard deviation (?n: standard deviation of nth division, n=1˜20) of the contrast of each divided part is calculated. (c) Xn (n=1˜20) of each divided part is calculated from the expression (1).

Abstract: Disclosed is a photoelectric conversion element comprising an anode, a cathode, and an active layer between the anode and the cathode, wherein the active layer includes an n-type semiconductor and a p-type semiconductor, and an area of a p-n junction between the n-type semiconductor and the p-type semiconductor is 100 ?m2 or more per 1 ?m3 of the active layer.

Abstract: Disclosed is a photoelectric conversion element comprising an anode, a cathode, and an active layer between the anode and the cathode, wherein the active layer includes an n-type semiconductor and a p-type semiconductor, and an area of a p-n junction between the n-type semiconductor and the p-type semiconductor is 100 ?m2 or more per 1 ?m3 of the active layer.