Abstract: A semiconductor device includes a substrate having a first upper surface; a semiconductor layer provided on the substrate; a first insulator layer provided over the semiconductor layer and having a second upper surface; a lower electrode provided over the first insulator layer; a dielectric layer provided on the lower electrode; and an upper electrode provided on the dielectric layer. A difference between a maximum value and a minimum value of a distance between the first upper surface of the substrate and the second upper surface of the first insulator layer is smaller than a thickness of the semiconductor layer.

Abstract: A semiconductor device manufacturing method includes: forming an electrode including an Ni layer and an Au layer successively stacked on a semiconductor layer; forming a Ni oxide film by performing heat treatment to the electrode at a temperature of 350° C. or more to deposit Ni at least at a part of a surface of the Au layer and to oxidize the deposited Ni; and forming an insulating film in contact with the Ni oxide film and containing Si.

Abstract: A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

Abstract: A semiconductor device includes a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer and having a first opening formed therein, a gate electrode disposed on the insulating layer and in contact with the semiconductor layer via the first opening, and a source electrode and a drain electrode in ohmic contact with the semiconductor layer. The gate electrode includes a crystallinity control film disposed on the insulating layer and having a second opening formed such that an inner wall thereof extends to an inner wall of the first opening toward the substrate in plan view in a direction perpendicular to a top surface of the substrate, and a first metal film disposed on the crystallinity control film and in Schottky contact with the semiconductor layer via the inner walls, extending to each other, of the second opening and the first opening.

Abstract: A semiconductor device includes a substrate, a nitride semiconductor layer formed on the substrate, a source electrode and a drain electrode formed in the nitride semiconductor layer. The source electrode and drain electrode are arranged side by side in a first direction. A gate electrode is formed on the nitride semiconductor layer between the source electrode and the drain electrode. A first protective film is formed on the nitride semiconductor layer, and covers the first protective film covering the source electrode, the drain electrode, and the gate electrode. A source field plate is formed on the first protective film between the gate electrode and the drain electrode in a plan view. A dielectric-breakdown inhibition portion includes a part positioned between an end of the source field plate and an end of the drain electrode in a sectional view, and inhibits dielectric breakdown of the first protective film.

Abstract: A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

Abstract: A semiconductor device includes a semiconductor layer, a source electrode and a drain electrode that are disposed on the upper surface of the semiconductor layer, a gate electrode disposed on the upper surface of the semiconductor layer and located between the source electrode and the drain electrode, a first insulating film disposed on the gate electrode, and a field plate disposed on the first insulating film, at least part of the field plate overlapping the gate electrode, the field plate including a first metal layer and a second metal layer disposed on the upper surface of the first metal layer, the first metal layer containing gold, the second metal layer containing at least one of tantalum, tungsten, molybdenum, niobium, and titanium.

Abstract: A semiconductor device manufacturing method includes: forming an electrode including an Ni layer and an Au layer successively stacked on a semiconductor layer; forming a Ni oxide film by performing heat treatment to the electrode at a temperature of 350° C. or more to deposit Ni at least at a part of a surface of the Au layer and to oxidize the deposited Ni; and forming an insulating film in contact with the Ni oxide film and containing Si.

Abstract: A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

Abstract: A semiconductor device manufacturing method includes: forming an electrode including an Ni layer and an Au layer successively stacked on a semiconductor layer; forming a Ni oxide film by performing heat treatment to the electrode at a temperature of 350° C. or more to deposit Ni at least at a part of a surface of the Au layer and to oxidize the deposited Ni; and forming an insulating film in contact with the Ni oxide film and containing Si.

Abstract: A semiconductor device manufacturing method includes: forming an electrode including an Ni layer and an Au layer successively stacked on a semiconductor layer; forming a Ni oxide film by performing heat treatment to the electrode at a temperature of 350° C. or more to deposit Ni at least at a part of a surface of the Au layer and to oxidize the deposited Ni; and forming an insulating film in contact with the Ni oxide film and containing Si.

Abstract: A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

Abstract: An outboard motor includes an exhaust passage that discharges exhaust gases generated in a V-type engine into water from an exhaust opening. The exhaust passage includes first and second branch passages connected to cylinders and disposed inside a V-shaped line, a first upstream collecting passage connected to each of the first branch passages, a second upstream collecting passage connected to each of the second branch passages, and a downstream collecting passage connected to the first and second upstream collecting passages. A portion from an upstream end of the downstream collecting passage to a downstream end of the downstream collecting passage is disposed outside cylinder heads of the V-type engine.

Abstract: An eight cylinder engine includes cylinders that are fired at intervals corresponding to a crank angle of 90 degrees. The firing is conducted in four cylinders of each of first and second banks at uneven intervals. In a pair of cylinders of each of the banks in which the firing is consecutively conducted at an interval corresponding to a crank angle of 90 degrees, a central angle of an exhaust cam provided for one cylinder in which the firing is conducted later is larger than that of an exhaust cam provided for the other cylinder. In a pair of cylinders of each of the banks in which the firing is consecutively conducted at an interval corresponding to a crank angle of 270 degrees, a central angle of an exhaust cam provided for one cylinder in which the firing is conducted later is larger than that of an exhaust cam provided for the other cylinder.

Abstract: An outboard motor includes an exhaust passage that discharges exhaust gases generated in a V-type engine into water from an exhaust opening. The exhaust passage includes first and second branch passages connected to cylinders and disposed inside a V-shaped line, a first upstream collecting passage connected to each of the first branch passages, a second upstream collecting passage connected to each of the second branch passages, and a downstream collecting passage connected to the first and second upstream collecting passages. A portion from an upstream end of the downstream collecting passage to a downstream end of the downstream collecting passage is disposed outside cylinder heads of the V-type engine.

Abstract: An outboard motor includes an exhaust passage that discharges exhaust gases generated in a V-type engine into water from an exhaust opening. The exhaust passage includes first and second branch passages connected to cylinders and disposed inside a V-shaped line, a first upstream collecting passage connected to each of the first branch passages, a second upstream collecting passage connected to each of the second branch passages, and a downstream collecting passage connected to the first and second upstream collecting passages. A portion from an upstream end of the downstream collecting passage to a downstream end of the downstream collecting passage is disposed outside cylinder heads of the V-type engine.

Abstract: A fuel supply device that supplies fuel from an external tank to an engine includes a fuel injection, an internal tank, a first pipe, a second pipe, a first pump, a fuel supply quantity detection device, and a control device. The internal tank stores fuel to be delivered to the fuel injection device. The first pipe is linked to the internal tank and delivers fuel from the external tank to the internal tank. The second pipe is linked to the fuel injection device and delivers fuel from the internal tank to the fuel injection device. The fuel supply quantity detection device is attached to the first pipe and detects a quantity of fuel supplied from the external tank via the first pipe to the internal tank. The control device implements a predetermined control when the quantity of fuel detected by the fuel supply quantity detection device is below a threshold.

Abstract: An eight cylinder engine includes cylinders that are fired at intervals corresponding to a crank angle of 90 degrees. The firing is conducted in four cylinders of each of first and second banks at uneven intervals. In a pair of cylinders of each of the banks in which the firing is consecutively conducted at an interval corresponding to a crank angle of 90 degrees, a central angle of an exhaust cam provided for one cylinder in which the firing is conducted later is larger than that of an exhaust cam provided for the other cylinder. In a pair of cylinders of each of the banks in which the firing is consecutively conducted at an interval corresponding to a crank angle of 270 degrees, a central angle of an exhaust cam provided for one cylinder in which the firing is conducted later is larger than that of an exhaust cam provided for the other cylinder.

Abstract: An outboard motor includes an exhaust passage that discharges exhaust gases generated in a V-type engine into water from an exhaust opening. The exhaust passage includes first and second branch passages connected to cylinders and disposed inside a V-shaped line, a first upstream collecting passage connected to each of the first branch passages, a second upstream collecting passage connected to each of the second branch passages, and a downstream collecting passage connected to the first and second upstream collecting passages. A portion from an upstream end of the downstream collecting passage to a downstream end of the downstream collecting passage is disposed outside cylinder heads of the V-type engine.

Abstract: A marine vessel propulsion system includes multiple propulsion devices, multiple operation levers, and multiple lever position sensors arranged to detect the positions of the multiple operation levers, and a control unit. The control unit is programmed to control, based on detection results from the multiple lever position sensors, the shift states of the respective propulsion devices and to change the steering angle of at least one of the propulsion devices. The control unit may be arranged to change the steering angles of the propulsion devices to facilitate the behavior of the hull corresponding to the shift states of the respective propulsion devices.