Abstract: A bar-shaped semiconductor laser chip that can hold down a variation in oscillation wavelength is provided. The bar-shaped semiconductor laser chip has a nitride semiconductor substrate and a semiconductor layer formed on the main surface of the nitride semiconductor substrate and including a plurality of laser chip portions. The plurality of laser chip portions are arrayed in the [11-20] direction. The main surface of the nitride semiconductor substrate is a (0001) plane having an off-angle in the direction along the [11-20] direction. The central part of the main surface of the nitride semiconductor substrate has an off-angle of 0.05±0.1 degrees from the (0001) plane in the direction along the [11-20] direction.

Abstract: A bar-shaped semiconductor laser chip that can hold down a variation in oscillation wavelength is provided. The bar-shaped semiconductor laser chip has a nitride semiconductor substrate and a semiconductor layer formed on the main surface of the nitride semiconductor substrate and including a plurality of laser chip portions. The plurality of laser chip portions are arrayed in the [11-20] direction. The main surface of the nitride semiconductor substrate is a (0001) plane having an off-angle in the direction along the [11-20] direction. The central part of the main surface of the nitride semiconductor substrate has an off-angle of 0.05±0.1 degrees from the (0001) plane in the direction along the [11-20] direction.

Abstract: A filter 2A(2C), which prevents the leakage of electromagnetic waves from a PDP 1, is provided with a filter base 11 in front of the PDP 1 and a grounded conductive mesh 12 which transmits light from the base 11 on the PDP 1 side. A light scattering layer 13 is bonded to the mesh 12 by a conductive adhesive 14 which transmits light, and the spaces of the lattice, when the base 1 exists, of the mesh 12 are filled with the adhesive 14 so that, when an electric charge is induced in the mesh 12 by a pulse voltage applied to the PDP 1 for write/erase, the voltage across the lattice of the mesh 12 is made nearly equal to the potential of the mesh 12 so as not to cause an electric discharge and generate noise.

Abstract: A switching power supply apparatus rectifies an AC power input in a rectifier circuit, switches a rectified output and rectifies and smoothes the same in a switching circuit, and a desired DC voltage is derived. A current limiting circuit limits a current supplied to a smoothing capacitor of the rectifier circuit. A voltage detecting circuit detects a rectified output of the rectifier circuit. A current limiting control circuit controls the current limiting circuit in response to a detected voltage. The current limiting control circuit activates the current limiting circuit in a first preset period in which the detected voltage is equal to or lower than a preset level. Further, the current limiting control circuit activates the current limiting circuit for a second preset period after the detected voltage is first changed from a level equal to or higher than the preset level to a level lower than the preset level and then returned to the level equal to or higher than the preset level.

Abstract: There is disclosed a polyester resin composition comprising: (a) 50 to 70 parts by weight of a polyester resin composed mainly of a repeating unit of butylene terephthalate; (b) 30 to 50 parts by weight of a polyester resin composed mainly of a repeating unit of ethylene terephthalate; (c) 0.1 to 10 parts by weight of a polyalkylene glycol derivative having at least one end group of carboxylate and alkyl ether, per 100 parts by the total weight of the polyester resins (a) and (b); and if necessary or required, (d) not more than 120 parts by weight of an inorganic reinforcing agent, per 100 parts by the total weight of the polyester resins (a) and (b).

Abstract: A semiconductor device includes a plurality of crystalline layers successively disposed directly on a substrate or on a buffer layer on the substrate and a getter layer comprising a metal of high activity disposed between the substrate or the buffer layer and the plurality of crystalline layers. An MO-CVD crystal growth method for growing a plurality of crystalline layers successively on a substrate or on a substrate having a buffer layer by supplying gases to a reaction tube containing a substrate includes growing a getter layer, including a metal of high activity for removing impurities, on the substrate or the buffer layer before growing a target crystalline layer.

Abstract: A semiconductor laser has a pair of clad layers sandwiching an active layer on a substrate. A crystal layer having a broader band gap than that of the active layer and a smaller lattice constant than that of the substrate is grown on the substrate in the active layer regions adjacent to the mirror surfaces to thereby eliminate the light absorption in these regions and increase the output power without shifting the wavelength to the longer side.