Patents by Inventor Yukio Kawano
Yukio Kawano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12009106Abstract: Provided is a technique for efficiently predicting the number (quantity) of occurrences of emergency medical service requests in a target area.Type: GrantFiled: November 8, 2019Date of Patent: June 11, 2024Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATIONInventors: Sunyong Kim, Ippei Shake, Kazuaki Obana, Atsuhiko Maeda, Michiharu Takemoto, Yukio Kikuya, Hiroshi Sato, Tetsuo Kawano, Kenichi Fukuda
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Patent number: 11118977Abstract: Provided are a terahertz wave detection device and a terahertz wave detection system to execute checking at high speed with high sensitivity and accuracy and to execute omnidirectional inspection without requiring a large checking system. A flexible array sensor (30) includes: a terahertz wave detection element (10) having a flexible single-walled carbon nanotube film (11), and a first electrode (12) and a second electrode (13) disposed to face each other on a two-dimensional plane of the single-walled carbon nanotube film (11); and a flexible substrate (20) having flexibility to support the terahertz wave detection element (10) so as to be freely curved. The flexible substrate (20) is preferably formed in a curved or cylindrical shape, so that the terahertz wave detection elements (10) are arrayed on the flexible substrate 20 formed in a curved or cylindrical shape.Type: GrantFiled: May 9, 2018Date of Patent: September 14, 2021Assignee: Tokyo Institute of TechnologyInventors: Yukio Kawano, Daichi Suzuki
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Patent number: 10969335Abstract: A terahertz wave detection device includes a low-dimensional electron system material formed on a substrate; and a first electrode and a second electrode opposingly arranged on a two-dimensional plane of the low-dimensional electron system material. The first electrode and the second electrode are made of metals having different thermal conductivity. An 8-element array sensor includes eight terahertz wave detection devices aligned in an array. The terahertz wave detection device includes carbon nanotube film; a first electrode disposed on one side of the carbon nanotube film; and a second electrode disposed on the other side of the carbon nanotube film. The first electrode and the second electrode have different thermal conductivity.Type: GrantFiled: April 28, 2017Date of Patent: April 6, 2021Assignee: Tokyo Institute of TechnologyInventors: Yukio Kawano, Daichi Suzuki
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Publication number: 20210010932Abstract: A terahertz wave detection device includes a low-dimensional electron system material formed on a substrate; and a first electrode and a second electrode opposingly arranged on a two-dimensional plane of the low-dimensional electron system material. The first electrode and the second electrode are made of metals having different thermal conductivity. An 8-element array sensor includes eight terahertz wave detection devices aligned in an array. The terahertz wave detection device includes carbon nanotube film; a first electrode disposed on one side of the carbon nanotube film; and a second electrode disposed on the other side of the carbon nanotube film. The first electrode and the second electrode have different thermal conductivity.Type: ApplicationFiled: April 28, 2017Publication date: January 14, 2021Inventors: Yukio KAWANO, Daichi SUZUKI
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Publication number: 20200141806Abstract: Provided are a terahertz wave detection device and a terahertz wave detection system to execute checking at high speed with high sensitivity and accuracy and to execute omnidirectional inspection without requiring a large checking system. A flexible array sensor (30) includes: a terahertz wave detection element (10) having a flexible single-walled carbon nanotube film (11), and a first electrode (12) and a second electrode (13) disposed to face each other on a two-dimensional plane of the single-walled carbon nanotube film (11); and a flexible substrate (20) having flexibility to support the terahertz wave detection element (10) so as to be freely curved. The flexible substrate (20) is preferably formed in a curved or cylindrical shape, so that the terahertz wave detection elements (10) are arrayed on the flexible substrate 20 formed in a curved or cylindrical shape.Type: ApplicationFiled: May 9, 2018Publication date: May 7, 2020Applicant: Tokyo Institute of TechnologyInventors: Yukio KAWANO, Daichi SUZUKI
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Patent number: 10436632Abstract: A terahertz image measurement device includes a terahertz detection sensor, a magnetic field generating unit, and a measurement control unit. The sensor detects near-field light of terahertz light emitted from a sample. The magnetic field generating unit has a coil disposed around the sample and the sensor, and wound to surround the optical axis of terahertz light irradiated on the sensor, and applies to the sensor a magnetic field generated by allowing an electric current to flow through the coil. The measurement control unit changes a value of the electric current flowing through the coil, sets a strength of the magnetic field to a magnetic field value for which a detection signal level of the terahertz light detected by the sensor increases prominently, and allows the magnetic field value to conform to a specific frequency of the terahertz light.Type: GrantFiled: December 14, 2016Date of Patent: October 8, 2019Assignee: TOKYO INSTITUTE OF TECHNOLOGYInventor: Yukio Kawano
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Publication number: 20180364094Abstract: A terahertz image measurement device includes a terahertz detection sensor, a magnetic field generating unit, and a measurement control unit. The sensor detects near-field light of terahertz light emitted from a sample. The magnetic field generating unit has a coil disposed around the sample and the sensor, and wound to surround the optical axis of terahertz light irradiated on the sensor, and applies to the sensor a magnetic field generated by allowing an electric current to flow through the coil. The measurement control unit changes a value of the electric current flowing through the coil, sets a strength of the magnetic field to a magnetic field value for which a detection signal level of the terahertz light detected by the sensor increases prominently, and allows the magnetic field value to conform to a specific frequency of the terahertz light.Type: ApplicationFiled: December 14, 2016Publication date: December 20, 2018Applicant: TOKYO INSTITUTE OF TECHNOLOGYInventor: Yukio KAWANO
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Patent number: 8253104Abstract: A terahertz wave detecting apparatus includes a semiconductor chip 12 in which a 2-dimensional electron gas 13 is formed at a constant position from its surface, and a carbon nanotube 14, a conductive source electrode 15, a drain electrode 16 and a gate electrode 17 provided in close contact with the surface of the chip. The carbon nanotube 14 extends along the surface of the chip, where both ends of the tube are connected to the source electrode and the drain electrode of the chip, and the gate electrode 17 is spaced at a constant interval from the side surface of the carbon nanotube. Further, the apparatus includes a SD current detecting circuit 18 for applying a voltage between the source electrode and the drain electrode and for detecting SD current therebetween, a gate voltage applying circuit 19 for applying a variable gate voltage between the source electrode and the gate electrode, and a magnetic field generating device 20 for applying a variable magnetic field to the chip.Type: GrantFiled: September 1, 2009Date of Patent: August 28, 2012Assignee: RikenInventors: Yukio Kawano, Koji Ishibashi
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Patent number: 8148688Abstract: A near-field terahertz wave detector comprises a semiconductor chip (12) whose longitudinal electrical resistance along its surface changes due to a near-field wave of a terahertz wave (1), an insulating film (18) which covers the surface of the semiconductor chip, and a conductive film (20) able to shield the terahertz wave by covering the surface of the insulating film. The conductive film (20) has an aperture (21) whose maximum size is one digit or more smaller than the wavelength of the terahertz wave. Further, a planar conductive probe (14) is provided between the conductive film (20) and the semiconductor chip (12). The conductive probe (14) is insulated from the conductive film (20) by the insulating film (18), and a tip (14a) of the conductive probe (14) is located inside the aperture (21).Type: GrantFiled: January 9, 2009Date of Patent: April 3, 2012Assignee: RikenInventors: Yukio Kawano, Koji Ishibashi
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Patent number: 7947955Abstract: A terahertz wave detecting apparatus includes a semiconductor chip 12, a two-dimensional graphene 14, a conductive source electrode 15, and a drain electrode 16 and a gate electrode 17. The two-dimensional graphene 14 is connected to the source electrode and the drain electrode. The apparatus further includes a SD voltage detection circuit 18, a gate voltage applying circuit 19 and a magnetic field generating device 20.Type: GrantFiled: February 5, 2010Date of Patent: May 24, 2011Assignee: RikenInventors: Yukio Kawano, Koji Ishibashi
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Publication number: 20100200755Abstract: A terahertz wave detecting apparatus includes a semiconductor chip 12, a two-dimensional graphene 14, a conductive source electrode 15, and a drain electrode 16 and a gate electrode 17. The two-dimensional graphene 14 is connected to the source electrode and the drain electrode. The apparatus further includes a SD voltage detection circuit 18, a gate voltage applying circuit 19 and a magnetic field generating device 20.Type: ApplicationFiled: February 5, 2010Publication date: August 12, 2010Applicant: RIKENInventors: Yukio KAWANO, Koji ISHIBASHI
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Publication number: 20100051812Abstract: A terahertz wave detecting apparatus includes a semiconductor chip 12 in which a 2-dimensional electron gas 13 is formed at a constant position from its surface, and a carbon nanotube 14, a conductive source electrode 15, a drain electrode 16 and a gate electrode 17 provided in close contact with the surface of the chip. The carbon nanotube 14 extends along the surface of the chip, where both ends of the tube are connected to the source electrode and the drain electrode of the chip, and the gate electrode 17 is spaced at a constant interval from the side surface of the carbon nanotube. Further, the apparatus includes a SD current detecting circuit 18 for applying a voltage between the source electrode and the drain electrode and for detecting SD current therebetween, a gate voltage applying circuit 19 for applying a variable gate voltage between the source electrode and the gate electrode, and a magnetic field generating device 20 for applying a variable magnetic field to the chip.Type: ApplicationFiled: September 1, 2009Publication date: March 4, 2010Applicant: RIKENInventors: Yukio Kawano, Koji Ishibashi
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Publication number: 20100006892Abstract: A near-field terahertz wave detector comprises a semiconductor chip (12) whose longitudinal electrical resistance along its surface changes due to a near-field wave of a terahertz wave (1), an insulating film (18) which covers the surface of the semiconductor chip, and a conductive film (20) able to shield the terahertz wave by covering the surface of the insulating film. The conductive film (20) has an aperture (21) whose maximum size is one digit or more smaller than the wavelength of the terahertz wave. Further, a planar conductive probe (14) is provided between the conductive film (20) and the semiconductor chip (12). The conductive probe (14) is insulated from the conductive film (20) by the insulating film (18), and a tip (14a) of the conductive probe (14) is located inside the aperture (21).Type: ApplicationFiled: January 9, 2009Publication date: January 14, 2010Applicant: RIKENInventors: Yukio Kawano, Koji Ishibashi