Abstract: A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.

Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing electrode is formed on the entire surface thereof. The current diffusing electrode is patterned into a plurality of light emitting unit portions (A), electrode pad portion (B), and connecting portions (C) for connecting between the electrode pad portion (B) and the light emitting unit portions (A) or between two of the light emitting unit portions (A), and a part of the semiconductor laminating portion may be etched according to the patterning of the current diffusing electrode. The bonding electrode may be formed on the electrode pad portion (B) which is formed so as to make the light emitting layer forming portion non-luminous.

Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.

Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.

Abstract: The present novel material, an adjuvant for accelating enzyme activity, is manufactured by contacting with organic substances and/or orgnic compounds included a small quantity of inorganic substances and catlizers including enzymes in nature, clay catalizer, microorganism group and water, and closely resembles to maternal amniotic liquid contained 15 kinds of specific metalic cation, which are indispensable material to activate the enzymes, and 20 kinds of low molecular organic compound contained indispensable basic amino acids, which is necessary to supply the biological components.

Abstract: To provide a disk supporting apparatus, a disk holding apparatus and a disk apparatus whose planar dimension is minimized, and which can be manufactured simply and inexpensively.

Abstract: On a semiconductor substrate (1), there are laminated a light emitting layer forming portion (11) having at least an n-type layer (3) and a p-type layer (5) and a window layer (6), and a semiconductor laminating portion (12) is formed. On a surface thereof, a step free current blocking layer (10) is partially provided, so that a surface of the current blocking layer and the surface of the semiconductor laminating portion are flat. An upper electrode (8) is formed thereon in an area larger than that of the current blocking layer (10), and a lower electrode (9) is provided on a back surface of the semiconductor substrate (1). As a result, there can be provided a semiconductor light emitting device with structure such that there is no need to place an etching process in the middle of an epitaxial growth process, and the reliability of electrode can be improved without a step being produced at a portion at which the upper electrode is formed and a method thereof.

Abstract: A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.

Abstract: A light emitting layer forming portion is provided on a semiconductor substrate, in which an active layer made of a compound semiconductor is sandwiched between a first and second clad layers made of compound semiconductor having band gap greater than that of the active layer, respectively and having a different conductivity type each other and furthermore a window layer is provided above the second clad layer. The second clad layer is made of a semiconductor having refractive index greater than that of the first clad layer. More preferably the window layer is made of a semiconductor having a refractive index greater than that of the second clad layer. As a result, the absorption of the light emitted from the light emitting layer in the semiconductor substrate can be reduced, and the light can be attracted toward the top surface so that the external quantum efficiency can be advanced.

Abstract: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into a plurality of light emitting unit portions (A), electrode pad portion B, and connecting portions C for connecting between the electrode pad portion B and the light emitting unit portions A or between two of the light emitting unit portions (A), and the semiconductor laminating portion between the respective light emitting unit portions A is removed through etching to make clearances except for the connecting portions C. The bonding electrode is formed on the electrode pad portion (B) which is formed so as to make the light emitting layer forming portion nonluminous.

Abstract: A turntable can be manufactured inexpensively using a comparatively inexpensive material and in accordance with ordinary injection molding technique and mold management. A thin-walled cylindrical fixing portion having an insertion hole, into which a rotational shaft is pressed, is formed at a central portion of the turntable. A thin-walled cylindrical reinforcing portion, which is concentric with the fixing portion and has a large diameter, is formed at the outer circumferential side of the fixing portion. Reinforcing rib portions are provided radially between the fixing portion and the reinforcing portion. In this way, deformation due to sink or the like does not occur at the time of injection molding, and extracting force of the rotational shaft which was pressed into the insertion hole can be adjusted to a predetermined value.

Abstract: A plasticizer for a urethane curable composition, which contains an ester (C) of a monocarboxylic acid (A) consisting of an unsaturated fatty acid having a carbon number of from 10 to 24 or a fatty acid mixture of the above unsaturated fatty acid with a saturated fatty acid, and a monool (B) having a carbon number of from 1 to 10.

Abstract: On a semiconductor substrate (1), there are laminated a light emitting layer forming portion (11) having at least an n-type layer (3) and a p-type layer (5) and a window layer (6), and a semiconductor laminating portion (12) is formed. On a surface thereof, a step free current blocking layer (10) is partially provided, so that a surface of the current blocking layer and the surface of the semiconductor laminating portion are flat. An upper electrode (8) is formed thereon in an area larger than that of the current blocking layer (10), and a lower electrode (9) is provided on a back surface of the semiconductor substrate (1). As a result, there can be provided a semiconductor light emitting device with structure such that there is no need to place an etching process in the middle of an epitaxial growth process, and the reliability of electrode can be improved without a step being produced at a portion at which the upper electrode is formed and a method thereof.

Abstract: A moisture control construction material is enhanced in decorativeness and improved in stain-resistance by glazing the surfaces thereof. The material is prepared by mixing soil material and clay, molding the mixture to a body, applying glate on the body and firing the body. The body may be performed biscuit firing before glazing. The moisture-absorbing-and-desorbing-performance thereof in each 8-hour cycle is more than 80 g/m2. The body has prosity of 20-25%. More than 40% of pores of the body have a radius of less than 0.1 &mgr;m.

Abstract: A light emitting layer forming portion (9) comprising InGaAlP based compound semiconductor and forming a light emitting layer is deposited on an n-type GaAs substrate (1), a p-type current dispersion layer (5) comprising AlGaAs based compound semiconductor is provided on a surface of the light emitting layer forming portion (9), a p-side electrode (7) is provided on a portion of a surface of the current dispersion layer (5) through a contact layer (6) comprising p-type GaAs, and an n-side electrode (8) is provided on a back. surface of the GaAs substrate (1). Vickers' hardness of the current dispersion layer (5) comprising AlGaAs is 700 or higher. As a result, at the time of handling for mounting, or wire bonding, a fracture or a crack is not generated in the LED chip, and it is possible to enhance the yield of assembling steps.

Abstract: A formed building material is provided of which front surface is allowed to be glazed, thereby improving its decorative property and improving its soil resistance and which has hazardous substance adsorbing function. This formed building material is produced by baking, a glaze is applied to a front surface of a main body of the formed building material, and the specific surface area of the main body is 10 m2/g or more. The main body has porosity of 20-50%, and more than 40% of pores of the main body have a radius of less than 0.1 &mgr;m. The glaze forms a glass layer on 90% or less of the entire surface area of the main body and/or the maximum thickness of the glass layer formed by the glaze is 300 &mgr;m or less. The formed building material is attached to a lower portion of a wall and/or a floor of a room.

Abstract: A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal−yAs (0.6≦y≦0.8) auto-doped in a carrier concentration of 5×1018-3×1019 cm−3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.

Abstract: A moisture control construction material is enhanced in decorativeness and improved in stain-resistance by glazing the surfaces thereof. The material is prepared by mixing soil material and clay, molding the mixture to a body, applying glate on the body and firing the body. The body may be performed biscuit firing before glazing. The moisture-absorbing-and-desorbing-performance thereof in each 8-hour cycle is more than 80 g/m2. The body has prosity of 20-25%. More than 40% of pores of the body have a radius of less than 0.1 &mgr;m.

Abstract: A semiconductor light emitting device is disclosed. An emitting layer forming portion for forming an emitting layer made of a compound semiconductor of AlGaInP group or AlGaAs group including a n-type layer, an active layer and a p-type layer laid one on another is formed on a GaAs substrate. Further, a current diffusion layer of GaP is formed on the front surface of the emitting layer forming portion. The p-type layer between the active layer and the current diffusion layer is formed to the thickness of not less than about 2 &mgr;m, or the current diffusion layer is formed to the thickness of about 3 to 7 &mgr;m. As a result, the semiconductor light emitting device of a high luminance is thus realized, in which the distortion due to the lattice mismatch has no effect on the emitting layer.

Abstract: An active layer is sandwiched between the n-type cladding layer and the p-type cladding layer, forming a light emitting layer forming portion. The n-type cladding layer has a carrier concentration of non-doped or less than 5.times.10.sup.17 cm.sup.-3 on a side thereof close to the active layer, and a carrier concentration of 7.times.10.sup.17 -7.times.10.sup.18 cm .sup.-3 on a side thereof remote from the active layer. With this structure, it is possible to suppress to a minimum the deterioration of crystallinity at an interface between the active layer and the n-type cladding layer as well as in the active layer. thereby providing a semiconductor light emitting device high in brightness.