Abstract: A semiconductor apparatus 10 includes a radiator 30 on which plural semiconductor modules 20 that include semiconductor elements 21 are mounted, the semiconductor apparatus 10 characterized by the radiator 30 including a first main surface 30B and a second main surface 30C configured to be located on the opposite side of the first main surface 30B. Semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2 are arranged in the first main surface 30B and the second main surface 30C in a zigzag pattern in cross-sectional view; and the semiconductor modules 20 are mounted onto some or all of the semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2.

Abstract: A heat pipe comprises a housing that has a heating section that is made of metal and is contacted by a heating element, a cooling section that is made of metal and is cooled by a cooling element, and a plurality of refrigerant flow channels formed inside the housing from the heating section to the cooling section; refrigerant that is enclosed inside the plurality of refrigerant flow channels; and heat-insulating layers that are disposed between the plurality of refrigerant flow channels located at least at the heating section in the housing.

Abstract: A semiconductor apparatus 10 includes a radiator 30 on which plural semiconductor modules 20 that include semiconductor elements 21 are mounted, the semiconductor apparatus 10 characterized by the radiator 30 including a first main surface 30B and a second main surface 30C configured to be located on the opposite side of the first main surface 30B. Semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2 are arranged in the first main surface 30B and the second main surface 30C in a zigzag pattern in cross-sectional view; and the semiconductor modules 20 are mounted onto some or all of the semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2.

Abstract: A high-solids anticorrosive coating composition which comprises a main ingredient (A) comprising an epoxy resin (a1) and a hardener ingredient (B) comprising an alicyclic amine hardener (b1) and/or a Mannich type hardener (b2), the ingredient (A) and/or the ingredient (B) containing at least either of an additive (a2) selected among epoxidized reactive diluents and modified epoxy resins and a coating film modifier (ab) selected among petroleum resins, xylene resins, coumarone resins, terpene phenol resins and vinyl chloride copolymers. The high-solids anticorrosive coating composition especially of the rapidly curable type is characterized by containing a high-boiling organic solvent having a boiling point exceeding 150° C. and containing substantially no organic solvent having a boiling point of 150° C. or lower.

Abstract: A semiconductor element heat dissipating member is provided which has excellent heat dissipation characteristics and adhesion characteristics and enables production of a semiconductor device at a low cost. A semiconductor device using the same, and a method of producing the same are also provided. The semiconductor element heat dissipating member has a conductive substrate and an electrically insulating amorphous carbon film containing hydrogen, and the electrically insulating amorphous carbon film is formed at least on a region of the conductive substrate on which region a semiconductor element is to be mounted.

Abstract: A semiconductor element heat dissipating member is provided which has excellent heat dissipation characteristics and adhesion characteristics and enables production of a semiconductor device at a low cost. A semiconductor device using the same, and a method of producing the same are also provided. The semiconductor element heat dissipating member has a conductive substrate and an electrically insulating amorphous carbon film containing hydrogen, and the electrically insulating amorphous carbon film is formed at least on a region of the conductive substrate on which region a semiconductor element is to be mounted.

Abstract: In a pressure-welded semiconductor device where at least one semiconductor element is disposed inside a casing, a buffer conductive layer including conductive carbons is disposed at pressure-welded portions between first casing-side electrodes and element-side electrodes disposed on a first main surface and at pressure-welded portions between second casing-side electrodes and element-side electrodes disposed on a second main surface.

Abstract: In a pressure-welded semiconductor device where at least one semiconductor element is disposed inside a casing, a buffer conductive layer including conductive carbons is disposed at pressure-welded portions between first casing-side electrodes and element-side electrodes disposed on a first main surface and at pressure-welded portions between second casing-side electrodes and element-side electrodes disposed on a second main surface.

Abstract: The liquid crystal composition of the present invention comprises 1-99 wt. % of an antiferroelectric liquid crystal compound such as a compound represented by the following formula [A-8] and 99-1 wt. % of a cholesteric liquid crystal compound such as a compound represented by the following formula [B-2]. ##STR1## By the use of the liquid crystal composition of the invention, a liquid crystal element improved in liquid crystal properties such as contrast can be prepared.