Abstract: A charging device of the present invention includes a DC-DC converter, a charging circuit that charges a secondary battery, a power supply voltage detecting circuit that detects an input voltage Ve, an output voltage setting circuit that sets an output voltage of the DC-DC converter, and a charging control section that controls the charging circuit and the output voltage setting circuit based on the input voltage Ve, and the charging control section increases the output voltage of the DC-DC converter by a predetermined voltage in a stepwise manner while monitoring the input voltage Ve, and in a case where the input voltage Ve is decreased to a first threshold voltage Vth1 or less before the output voltage of the DC-DC converter increases to a rated charging voltage, the charging control section keeps the output voltage of the DC-DC converter at a voltage that is one step lower than a voltage at a time point of the case.

Abstract: An edge radiation thermometer performs measurements before a semiconductor wafer is transported into a chamber. The edge radiation thermometer performs the measurements while the semiconductor wafer is supported by lift pins and while the semiconductor wafer is placed on a susceptor, after the semiconductor wafer is transported into the chamber. A controller calculates a reflectivity of the semiconductor wafer based on these measurement values. Then, the controller calculates an intensity of an ambient light receive by the edge radiation thermometer, based on the reflectivity and an intensity of synchrotron radiation radiated from a quartz window. Subsequently, the controller subtracts the intensity of the ambient light from an intensity of light received by of the edge radiation thermometer during heat treatment on the semiconductor wafer to calculate the temperature of the semiconductor wafer.

Abstract: Preprocessing samples for nucleic acid analysis requires a means for effectively and accurately size-fractionating and dividing a nucleic acid sample in order to remove foreign substances that will negatively impact analysis performance. The present invention provides an electrophoretic collection device characterized by comprising: a collection hole for collection of a nucleic acid sample that has undergone electrophoretic separation; a light source 6 that radiates excitation light onto the nucleic acid sample; a detector 7 that detects light that has been emitted from the sample due to the radiated light; and a dispensing mechanism 9, 10, 11 that collects a nucleic acid sample solution within the collection hole, wherein the light source, detector, and dispensing mechanism can access the collection hole from respectively different directions.

Abstract: Realized is a pretreatment integrated nucleic acid analysis device which can widen an accessible range of a conveyance mechanism while suppressing increase in size of the device. The pretreatment mechanism-integrated nucleic acid analysis device has an analysis part (101, 102, 103, 112) that analyzes a sample and a pretreatment part (105, 106, 108, 109, 110) that performs pretreatment on the sample and moves the pretreated sample to the analysis part. The pretreatment part is provided with a dispensing machine 204 that dispenses a fluid, a holding mechanism 209 that holds a member, and a conveyance mechanism (205, 206, 207, 208) that moves the holding mechanism 209 in a plane direction, a vertical direction, and a rotation direction.

Abstract: A plurality of substrate support pins are erected on a susceptor that holds a semiconductor wafer that is an object being treated. The plurality of substrate support pins are set in a ring shape at equal intervals. A flash lamp irradiates the semiconductor wafer supported by the plurality of substrate support pins with flash light to heat the semiconductor wafer. The radius of a setting circle in which the plurality of substrate support pins are set is made larger as the pulse width of flash light emitted from the flash lamp decreases. To irradiate the semiconductor wafer with flash light while having the semiconductor wafer supported by the plurality of substrate support pins can prevent cracking of the semiconductor wafer despite possible abrupt deformation of the semiconductor wafer due to the flash-light irradiation.

Abstract: Even a radiation thermometer using a quantum infrared sensor appropriately measures the temperature of a substrate irradiated with a flash of light. A heat treatment apparatus includes a quantum infrared sensor configured to measure a temperature of the first substrate and a temperature of the second substrate. The heat treatment apparatus further includes a temperature correction unit configured to correct, using a correction coefficient calculated based on the reference temperature and the shift temperature, a temperature of the second substrate on which second heat treatment having irradiation with the flash of light is performed, the temperature being measured by the quantum infrared sensor.

Abstract: Before a start of a treatment of a semiconductor wafer to be treated first in a lot, a dummy wafer is transported into a chamber, and an atmosphere including a helium gas having high thermal conductivity is formed. When the dummy wafer is heated with light irradiation from halogen lamps, heat transfer from the dummy wafer the temperature of which has increased occurs at an upper chamber window and a lower chamber window, with the helium gas as a heating medium. At the time when the semiconductor wafer to be treated first is transported into the chamber, the upper chamber window and the lower chamber window are heated, which makes a temperature history of all the semiconductor wafers in the lot uniform. It is thus possible to omit dummy running.

Abstract: In order to reduce the cost of producing a spot array substrate and reduce the cost of nucleic acid polymer analysis, a spot array substrate is used which is produced by preparing a resin substrate 402 having a surface on which an uneven pattern is formed and a plurality of bead sitting positions set in a two-dimensional array within the uneven pattern, and loading surface-modified beads onto the bead sitting positions of the resin substrate.

Abstract: Prior to heat treatment of a semiconductor wafer to be treated, a dummy wafer is placed on a susceptor made of quartz, and the susceptor is preheated by irradiation with light from halogen lamps. A controller controls an output from the halogen lamps, based on the temperature of the susceptor measured with a radiation thermometer. The radiation thermometer receives infrared radiation of a wavelength longer than 4 ?m to measure the temperature of the susceptor. The radiation thermometer is able to receive only infrared radiation emitted from the susceptor to accurately measure the temperature of the susceptor, regardless of whether or not a wafer is held by the susceptor, because quartz is opaque in a wavelength range longer than 4 ?m.

Abstract: Before a start of a treatment of a semiconductor wafer to be treated first in a lot, a dummy wafer is transported into a chamber, and an atmosphere including a helium gas having high thermal conductivity is formed. When the dummy wafer is heated with light irradiation from halogen lamps, heat transfer from the dummy wafer the temperature of which has increased occurs at an upper chamber window and a lower chamber window, with the helium gas as a heating medium. At the time when the semiconductor wafer to be treated first is transported into the chamber, the upper chamber window and the lower chamber window are heated, which makes a temperature history of all the semiconductor wafers in the lot uniform. It is thus possible to omit dummy running.

Abstract: A semiconductor wafer to be treated is placed on a susceptor made of quartz installed in a chamber, and is heated by light irradiation from halogen lamps. Before the first semiconductor wafer of a production lot is transported into the chamber, a preheating substrate is placed on the susceptor. Then, the preheating substrate is heated by light irradiation from the halogen lamps to preheat the susceptor. The susceptor is heated to a preheating temperature higher than a stable temperature when the semiconductor wafers of the production lot are continuously treated. This enables a structure in the chamber, other than the susceptor, to be preheated to a temperature during steady treatment of the semiconductor wafer in a short time, so that it is possible to eliminate dummy running for heating the structure in the chamber by applying heating treatment to a plurality of dummy wafers.

Abstract: When pressure in a chamber is once reduced lower than that when a flash of light is emitted and is maintained, after a flash lamp irradiates a semiconductor wafer accommodated in the chamber with the flash of light, a portion in the chamber, where gas is liable to remain, is eliminated. Then, when a flow rate of nitrogen gas to be supplied into the chamber is increased to discharge gas in the chamber, particles flying in the chamber due to flash irradiation can be smoothly discharged. As a result, the particles flying in the chamber can be prevented from being attached to an additional semiconductor wafer.

Abstract: Prior to heat treatment of a semiconductor wafer to be treated, a dummy wafer is placed on a susceptor made of quartz, and the susceptor is preheated by irradiation with light from halogen lamps. A controller controls an output from the halogen lamps, based on the temperature of the susceptor measured with a radiation thermometer. The radiation thermometer receives infrared radiation of a wavelength longer than 4 ?m to measure the temperature of the susceptor. The radiation thermometer is able to receive only infrared radiation emitted from the susceptor to accurately measure the temperature of the susceptor, regardless of whether or not a wafer is held by the susceptor, because quartz is opaque in a wavelength range longer than 4 ?m.

Abstract: A charging device of the present invention includes a DC-DC converter, a charging circuit that charges a secondary battery, a power supply voltage detecting circuit that detects an input voltage Ve, an output voltage setting circuit that sets an output voltage of the DC-DC converter, and a charging control section that controls the charging circuit and the output voltage setting circuit based on the input voltage Ve, and the charging control section increases the output voltage of the DC-DC converter by a predetermined voltage in a stepwise manner while monitoring the input voltage Ve, and in a case where the input voltage Ve is decreased to a first threshold voltage Vth1 or less before the output voltage of the DC-DC converter increases to a rated charging voltage, the charging control section keeps the output voltage of the DC-DC converter at a voltage that is one step lower than a voltage at a time point of the case.

Abstract: A susceptor is preheated through light irradiation by a halogen lamp before the first semiconductor wafer of a lot as a processing target is transferred into a chamber. The temperature of the susceptor is measured by a radiation thermometer. A control unit is configured to control the output of the halogen lamp so that the temperature of the susceptor reaches a stable temperature based on a result of the measurement of the temperature of the susceptor by the radiation thermometer. The stable temperature of the susceptor is the temperature of the susceptor when the temperature of the susceptor is risen to a constant temperature by continuously performing light irradiation heating on a plurality of semiconductor wafers in the chamber without heating the susceptor.

Abstract: A susceptor is preheated through light irradiation by a halogen lamp before the first semiconductor wafer of a lot as a processing target is transferred into a chamber. The temperature of the susceptor is measured by a radiation thermometer. A control unit is configured to control the output of the halogen lamp so that the temperature of the susceptor reaches a stable temperature based on a result of the measurement of the temperature of the susceptor by the radiation thermometer. The stable temperature of the susceptor is the temperature of the susceptor when the temperature of the susceptor is risen to a constant temperature by continuously performing light irradiation heating on a plurality of semiconductor wafers in the chamber without heating the susceptor.

Abstract: A susceptor is preheated through light irradiation by a halogen lamp before the first semiconductor wafer of a lot as a processing target is transferred into a chamber. The temperature of the susceptor is measured by a radiation thermometer. A control unit is configured to control the output of the halogen lamp so that the temperature of the susceptor reaches a stable temperature based on a result of the measurement of the temperature of the susceptor by the radiation thermometer. The stable temperature of the susceptor is the temperature of the susceptor when the temperature of the susceptor is risen to a constant temperature by continuously performing light irradiation heating on a plurality of semiconductor wafers in the chamber without heating the susceptor.

Abstract: A semiconductor wafer to be treated is placed on a susceptor made of quartz installed in a chamber, and is heated by light irradiation from halogen lamps. Before the first semiconductor wafer of a production lot is transported into the chamber, a preheating substrate is placed on the susceptor. Then, the preheating substrate is heated by light irradiation from the halogen lamps to preheat the susceptor. The susceptor is heated to a preheating temperature higher than a stable temperature when the semiconductor wafers of the production lot are continuously treated. This enables a structure in the chamber, other than the susceptor, to be preheated to a temperature during steady treatment of the semiconductor wafer in a short time, so that it is possible to eliminate dummy running for heating the structure in the chamber by applying heating treatment to a plurality of dummy wafers.

Abstract: When pressure in a chamber is once reduced lower than that when a flash of light is emitted and is maintained, after a flash lamp irradiates a semiconductor wafer accommodated in the chamber with the flash of light, a portion in the chamber, where gas is liable to remain, is eliminated. Then, when a flow rate of nitrogen gas to be supplied into the chamber is increased to discharge gas in the chamber, particles flying in the chamber due to flash irradiation can be smoothly discharged. As a result, the particles flying in the chamber can be prevented from being attached to an additional semiconductor wafer.

Abstract: A susceptor is preheated through light irradiation by a halogen lamp before the first semiconductor wafer of a lot as a processing target is transferred into a chamber. The temperature of the susceptor is measured by a radiation thermometer. A control unit is configured to control the output of the halogen lamp so that the temperature of the susceptor reaches a stable temperature based on a result of the measurement of the temperature of the susceptor by the radiation thermometer. The stable temperature of the susceptor is the temperature of the susceptor when the temperature of the susceptor is risen to a constant temperature by continuously performing light irradiation heating on a plurality of semiconductor wafers in the chamber without heating the susceptor.