Abstract: A perovskite oxide is represented by a general formula ABO3 A represents at least one kind of metal element forming an A site, B represents at least one kind of metal element forming a B site. The B site includes at least one kind of metal element B1 selected from an element group consisting of the IV group elements and at least one kind of metal element B2 selected from an element group consisting of the V and VI group elements, and at least a part of the metal element B2 is of the 0 to +4 valence.

Abstract: A thin film capacitor element composition having a bismuth layered compound with a c-axis oriented substantially vertical to the substrate surface, wherein the bismuth layered compound is expressed by the formula (Bi2O2)2+(Am?1BmO3m+1)2? or Bi2Am?1BmO3M+3, the symbol m in the formula is an odd number, at least part of the Bi and/or A of the bismuth layered compound is substituted by a rare earth element, and the number of moles substituted by the rare earth element is larger than 1.0 and 2.8 or less with respect to the number of moles (m+1) of the total of Bi and A.

Abstract: A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate and which is expressed by a formula: (Bi2O2)2+(Am?1BmO3m+1)2?, or Bi2Am?1BmO3m+3 wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. The temperature characteristics of the dielectric constant are excellent. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the break-down voltage is improved and the surface smoothness is excellent.

Abstract: A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate and which is expressed by a formula: (Bi2O2)2+(Am?1BmO3m+1)2?, or Bi2Am?1BmO3m+3 wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. The temperature characteristics of the dielectric constant are excellent. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the break-down voltage is improved and the surface smoothness is excellent.

Abstract: The functional structural element includes: a substrate member which has a surface made of directionally solidified silicon; and a functional structural body which is made of a functional material and is formed on the surface of the substrate member.

Abstract: The liquid ejection head has a liquid ejection device which ejects liquid and is partially formed of a directionally solidified silicon substrate.

Abstract: A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi2O2)2+ (Am?1BmO2m+1)2? or Bi2Am?1BmO3m+3, wherein “m” is an odd number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W; and Bi in the bismuth layer compound is excessively included with respect to the composition formula of (Bi2O2)2+(Am?1BmO3m+1)2+ or Bi2Am?1BmO3m+3, and the excessive content of Bi is in a range of 0<Bi<0.6×m mol in terms of Bi.

Abstract: A thin-film capacitor(2) in which a lower electrode(6), a dielectric thin-film(8), and an upper electrode(10) are formed in order on a substrate(4). The dielectric thin-film(8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate surface and which is expressed by a formula: (Bi2O2)2+(Am?1BmO3m+1)2?, or Bi2Am?1BmO3m+3 wherein “m” is an odd number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the temperature characteristics of the dielectric constant are excellent, the break-down voltage is improved and the surface smoothness is excellent.

Abstract: A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi2O2)2+ (Am?1 Bm O3m+1)2? or Bi2Am?1 Bm O3m+3, wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W; and Bi in the bismuth layer compound is excessively included with respect to the composition formula of (Bi2O2)2+ (Am?1 Bm O3,+1)2? or Bi2Am?1 Bm O3m+3, and the excessive content of Bi is in a range of 0<Bi<0.5×m mol in of Bi.

Abstract: A thin film capacitive element according to the present invention includes between a first electrode layer and a second electrode layer a dielectric layer formed of a dielectric material containing a bismuth layer structured compound having a composition represented by the stoichiometric compositional formula: (Bi2O2)2+ (Am?1BmO3m+1)2?, where a symbol m is a positive integer, a symbol A is at least one element selected from a group consisting of sodium, potassium, lead, barium, strontium, calcium and bismuth, and a symbol B is at least one element selected from a group consisting of iron, cobalt, chromium, gallium, titanium, niobium, tantalum, antimony, vanadium, molybdenum and tungsten. The thin film capacitive element having the above identified configuration can be made thin and has an excellent temperature compensating characteristic.

Abstract: A thin film capacitive element according to the present invention includes between a first electrode layer and a second electrode layer a dielectric layer formed of a dielectric material containing a bismuth layer structured compound having a composition represented by the stoichiometric compositional formula: (Bi2O2)2+(Am?1BmO3m+1)2? but containing bismuth (Bi) in such an amount exceeding that determined by the stoichiometric ratio that bismuth (Bi) is excessive in an amount larger than 0 and smaller than 0.5 m mole in terms of bismuth (Bi), where the symbol m is a positive integer, the symbol A is at least one element selected from a group consisting of sodium, potassium, lead, barium, strontium, calcium and bismuth, and the symbol B is at least one element selected from a group consisting of iron, cobalt, chromium, gallium, titanium, niobium, tantalum, antimony, vanadium, molybdenum and tungsten.

Abstract: A method of producing a magnetic garnet single crystal film formation substrate 2 for growing a magnetic garnet single crystal film by liquid phase epitaxial growth is provided. First, a base substrate 10 composed of a garnet-based single crystal being unstable with a flux used for the liquid phase epitaxial growth is formed. Next, a buffer layer 11 composed of a garnet-based single crystal thin film formed at least on a crystal growing surface of said base substrate 10 and being stable with the flux is formed. When forming the buffer layer 11 on the base substrate 10, it is formed by a thin film formation method, such as sputtering, without heating the substrate 10 in a positive manner.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of fused quartz, an electrode layer formed on the support substrate, made of BSCCO (bismuth strontium calcium copper oxide) having a stoichiometric composition represented by Bi2Sr2CaCu2O8, having an anisotropic property and conductivity and enabling epitaxial growth of a dielectric material containing a bismuth layer structured compound thereon and oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi4Ti4O15 on the electrode layer.

Abstract: A decoupling capacitor connected to a power source for reducing power source noise.

Abstract: A method of manufacturing a ceramic film by using an AD method, by which a film having good crystallinity can be fabricated without using a high-temperature process. The method of manufacturing a ceramic film by using an aerosol including the steps of: (a) dispersing ceramic raw material powder containing an amorphous component in a gas to generate an aerosol; and (b) supplying the aerosol generated at step (a) into a chamber in which a substrate is placed and depositing the ceramic raw material powder on the substrate to form a ceramic film.

Abstract: A magnetic garnet single crystal film formation substrate 2 for growing a thick magnetic garnet single crystal film, wherein crystal defects, warps, cracks and flaking, etc. are not caused, by liquid phase epitaxial growth is provided. The substrate 2 comprises a base substrate 10 composed of a garnet-based single crystal being unstable with a flux used for the liquid phase epitaxial growth; a buffer layer 11a composed of a garnet-based single crystal thin film formed on a crystal growing surface 10a of said base substrate 10 and being stable with said flux; and a protective layer 11b formed at least on side surfaces 10b of said base substrate 10 crossing with said crystal growing surface of said base substrate 10 and being stable with said flux. By using the substrate, a high quality magnetic garnet single crystal film can be produced.

Abstract: A thin film capacity element composition includes a first bismuth layer-structured compound having positive temperature characteristics, that a specific permittivity rises as the temperature rises, in at least a part of a predetermined temperature range and a second bismuth layer-structured compound having negative temperature characteristics, that a specific permittivity declines as a temperature rises, in at least a part of said predetermined temperature range at any mixing ratio; wherein the bismuth layer-structured compound is expressed by a composition formula of CaxSr(1-x)Bi4Ti4O15.

Abstract: A dielectric thin film 8, comprising a first bismuth layer-structured compound layer 8a expressed by a composition formula of (Bi2O2)2+(Am?1 Bm O3m+1)2? or Bi2 Am?1 Bm O3m+3, wherein “m” is a positive number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. Between the first bismuth layer-structured compound layer 8a and a lower portion electrode 6, a second bismuth layer-structured compound layer 8b including bismuth in excess of that in the composition formula of said first bismuth layer-structured compound layer 8a.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of platinum (Pt), a buffer layer formed on the support substrate and formed of a dielectric material containing a bismuth layer structured compound having an excellent orientation characteristic and a composition represented by Bi4Ti3O12 and oriented in the c axis direction, and a dielectric layer formed on the buffer layer, formed of a dielectric material containing a bismuth layer structured compound having an excellent characteristic as a capacitor material and a composition represented by SrBi4T4O15 and containing the bismuth layer structured compound oriented in the c axis direction.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of fused quartz, an electrode layer formed on the support substrate and formed of a conductive material, a buffer layer formed on the electrode layer and formed of a dielectric material containing a bismuth layer structured compound having a composition represented by Bi4Ti3O12 and having an excellent orientation characteristic so that the bismuth layer structured compound is oriented in the c axis direction, and a dielectric layer formed on the buffer layer and formed of a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi4Ti4O15 and having an excellent orientation characteristic so that the bismuth layer structured compound is oriented in the c axis direction.