Abstract: A semiconductor device which IGBT (Z1) and a control circuit (B1) for driving the IGBT (Z1) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P1) for inputting a drive signal of the IGBT (Z1), a Schottky barrier diode (D2) having an anode connected to the input terminal (P1) and a cathode connected to an input terminal (B11) of the control circuit (B1), and a p-channel MOSFET (T1) for shorting both ends of the Schottky barrier diode (D2) when the voltage of the drive signal input to the input terminal (P1) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.

Abstract: In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other between the control input terminal and the GND terminal. A polysilicon resistance provided on an insulating film formed in a semiconductor substrate in which the IGBT is provided is employed as the ground resistance. A diffusion resistance obtained by injecting an impurity into said semiconductor substrate and performing a diffusion operation is employed as the temperature compensation resistance.

Abstract: A silicon oxide layer is formed at a surface region of a silicon substrate. Then, an amorphous silicon layer 13 is formed preferably in a thickness of 1 nm or below on the silicon substrate via the silicon oxide layer. Then, the amorphous silicon layer 13 is exposed to a silane gas preferably with heating the silicon substrate within a temperature range of 400-800° C. to form a high density and minute silicon nanocrystal.

Abstract: A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.

Abstract: On a given silicon substrate is epitaxially grown a strain-relaxed silicon germanium layer with penetrated dislocations and formed a metallic layer to form a multilayered intermediate structure, which is heated. In this case, metallic elements of the metallic layer are diffused through the penetrated dislocations of the silicon germanium layer to form a thin line structure made of metallic silicide at a boundary face between the silicon base and the silicon germanium layer.

Abstract: A short arc type mercury lamp in which a cathode and an anode are disposed opposite one another inside an arc tube, at least a noble gas and mercury are filled into the arc tube, cathode contains thorium oxide, a cone-shaped part that continues on from a cathode body is formed on the cathode, and a protruding part that continues on from the cone-shaped part is formed, wherein the number of grain boundaries on a straight line that passes through the approximate center of an arbitrary section in the radial direction of the protruding part is at least 0.5 per mm but not more than 100 per mm.

Abstract: On a Si substrate are formed successively a Ge interfacial layer as a dislocation controlling layer and a SiGe film. Then, at least at the region of the SiGe film near the Si substrate are formed 90 degrees dislocations.

Abstract: A semiconductor device which IGBT (Z1) and a control circuit (B1) for driving the IGBT (Z1) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P1) for inputting a drive signal of the IGBT (Z1), a Schottky barrier diode (D2) having an anode connected to the input terminal (P1) and a cathode connected to an input terminal (B11) of the control circuit (B1), and a p-channel MOSFET (T1) for shorting both ends of the Schottky barrier diode (D2) when the voltage of the drive signal input to the input terminal (P1) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.

Abstract: A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.

Abstract: The present invention aims at providing a printing system capable of attaining improvement in efficiency of printing preparation processing. In order to attain this object, a printing system (1) comprises a plurality of unit controllers (20) and a server controller (10) totally managing the plurality of unit controllers (20). The server controller (10) commands such purport that a process of creating a plurality of separate plate data is shared between the plurality of unit controllers, the plurality of separate plate data being created by separating digital data of objective printed matter into a plurality of color components and rasterizing the same. Each of the plurality of unit controllers (20) creates at least one separate plate data among the plurality of separate plate data on the basis of the command from the server controller (10).

Abstract: A short arc mercury discharge lamp including an arc tube filled with at least mercury and a rare gas, a cathode and an anode positioned opposite to each other within the arc tube, the cathode having an tapered area which tapers in a direction towards the anode and a projection which protrudes from the tapered area in a direction towards the anode. The amount of mercury to be added in the arc tube is in a range of 0.2≦n≦52, where n is the weight (mg/cm3) of the mercury per unit of volume, and a pressure of the rare gas to be added in the arc tube is in a range of 0.1≦p≦800, where p is the pressure (kPa) of the rare gas at an ambient temperature of 25° C.

Abstract: A semiconductor device includes a resin molded semiconductor element having a resin package and a plurality of connection leads disposed at one side of the resin package. An electromagnetic shielding member is disposed externally on the resin molded semiconductor element. The electromagnetic shielding member is made of a conductive or semi-conductive material and is in the form of an open-ended tubular covering. The resin package is inserted into the tubular covering through an opening thereof to enable the tubular covering to wrap the resin package with the connection leads extending outwardly through the opening.

Abstract: The present invention is relative to a loudspeaker protective unit for protecting a loudspeaker device against an excessive input. The loudspeaker protective unit includes a lamp (15) connected in series with the loudspeaker unit for protecting the loudspeaker unit against an excessive input. The lamp (15) is housed in a casing (16) exhibiting light-sealing properties. The casing (16), housing the lamp (15), is formed of an electrically conductive material, and is sealed with a sealant exhibiting preset electrical conductivity. The spacing between lead lines (153A), (153B) of the lamp (55) housed in the casing (56) is of a preset value. A preset inert gas is sealed within a main lamp body unit (151) and a preset voltage is applied to the main lamp body unit (151). When a preset voltage is applied across the between lead lines (153A), (153B), an electrical discharge is produced to interrupt the current flowing through the filament (154) to prohibit temperature rise in the lamp (55).

Abstract: A mercury lamp of the short arc type which can stably emit an intense spectrum at a wavelength of 365 nm with an extremely narrowed band region over a long time, and which has an anode and a cathode disposed opposite one another in a silica glass arc tube which is filled with mercury and a rare gas, is achieved by the amount of mercury being less than or equal to 1.0 mg/cc of the inside volume of the arc tube and at least one of the gases argon (Ar) and krypton (Kr) are used as the rare gas at room temperature with 1.0 to 8.0 atm.

Abstract: A short arc type mercury lamp in which a cathode and an anode are disposed opposite one another inside an arc tube, at least a noble gas and mercury are filled into the arc tube, cathode contains thorium oxide, a cone-shaped part that continues on from a cathode body is formed on the cathode, and a protruding part that continues on from the cone-shaped part is formed, wherein the number of grain boundaries on a straight line that passes through the approximate center of an arbitrary section in the radial direction of the protruding part is at least 0.5 per mm but not more than 100 per mm.

Abstract: A short arc mercury discharge lamp including an arc tube filled with at least mercury and a rare gas, a cathode and an anode positioned opposite to each other within the arc tube, the cathode having an tapered area which tapers in a direction towards the anode and a projection which protrudes from the tapered area in a direction towards the anode. The amount of mercury to be added in the arc tube is in a range of 0.2≦n≦52, where n is the weight (mg/cm3) of the mercury per unit of volume, and a pressure of the rare gas to be added in the arc tube is in a range of 0.1≦p≦800, where p is the pressure (kPa) of the rare gas at an ambient temperature of 25° C.

Abstract: Latch-up of each of parasitic thyristors (T1-T4), which occurs when a circuit element (B1) is formed on a semiconductor substrate in which an IGBT (Z1) has been formed, is prevented by a circuit for preventing the latch-up using Schottky barrier diodes (D2, D3) formed on the semiconductor substrate. Each of the Schottky barrier diodes (D2, D3), which is composed of a junction between a diffused layer used for forming the circuit element and a metal wiring layer, is used in the circuit for preventing the latch-up action of each of the parasitic thyristors (T1-T4). Thereby, the area of the semiconductor device can be made smaller while the semiconductor device can have a higher protection effect.

Abstract: A power converter individually comprises a first semiconductor device <2> and a second semiconductor device <3>. In the first semiconductor device <2>, a power conversion element such as an IGBT <19>, Zener diodes <20, 21>, a waveform shaping circuit <30>, a heating cutoff circuit <31> and a protective element <14> are formed on the same chip employing a p-type silicon substrate. In the second semiconductor device <3>, a Schmidt circuit <9>, a power supply circuit <10>, a high voltage detection circuit <11>, a protective element <13>, a logic gate <16> and an output circuit formed by a pnp transistor <17> are formed on the same chip employing a p-type silicon substrate. Thus, a power converter capable of reducing the circuit scale as a whole is obtained.

Abstract: A power converter individually comprises a first semiconductor device <2> and a second semiconductor device <3>. In the first semiconductor device <2>, a power conversion element such as an IGBT <19>, Zener diodes <20, 21>, a waveform shaping circuit <30>, a heating cutoff circuit <31> and a protective element <14> are formed on the same chip employing a p-type silicon substrate. In the second semiconductor device <3>, a Schmidt circuit <9>, a power supply circuit <10>, a high voltage detection circuit <11>, a protective element <13>, a logic gate <16>and an output circuit formed by a pnp transistor <17>are formed on the same chip employing a p-type silicon substrate. Thus, a power converter capable of reducing the circuit scale as a whole is obtained.

Abstract: To devise a mercury lamp of the short arc type with high radiant efficiency and increased arc stability which meets the demand for increasing the amount of radiation from the light source. In a mercury lamp of the short arc type, a cathode and an anode are disposed opposite one another within an arc tube filled with mercury and a rare gas. At least argon (Ar) and/or krypton (Kr) in an amount from 1.0 to 8.0 atm at room temperature is added as the rare gas. In addition, the relationship between various dimensions of the lamp is fixed such that conditions 0.3≦X/L≦0.6, (X+5)/D≦0.85, and (L−(X+5))/D≦0.85 are satisfied, L (mm) being the length of the bulb in the axial direction, X (mm) being the length of the cathode which projects in the axial direction into the emission space, and D (mm) being the maximum outside diameter of the bulb in the radial direction.