Abstract: There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

Abstract: There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

Abstract: A substrate processing technology including: transferring a substrate to a process chamber and mounting the substrate on a substrate holder; heating the substrate with a heating device to perform predetermined substrate processing; determining the number of times of the predetermined substrate processing that has been performed that the predetermined substrate processing has been performed a preset number of times or more, determining whether it is necessary to adjust a mounting position at which the substrate is mounted on the substrate holder; and when it is determined that a mounting position adjustment is necessary, determining the mounting position by comparing the substrate temperature measured at the performing the predetermined substrate processing with a premeasured temperature of the substrate which corresponds to the mounting position and is stored in a memory.

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common.

Abstract: There is provided a substrate processing apparatus that includes a substrate support configured to support one or more substrates, a process chamber in which the one or more substrates are processed, a gas supplier configured to supply gas, and a plasma generator including a plurality of first rod-shaped electrodes connected to a high-frequency power supply; and a second rod-shaped electrode installed between two first rod-shaped electrodes is grounded; and a buffer structure configured to accommodate the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and having a first wall surface on which a gas supply port that supplies gas into the process chamber is installed. Wherein the plasma generator is configured to convert gas into plasma by the plurality of first rod-shaped electrodes and the second rod-shaped electrode to supply the plasma-converted gas to the process chamber from the gas supply port.

Abstract: Described herein is a technique capable of processing a substrate uniformly using microwaves. According to one aspect of the technique of the present disclosure, there is provided a heating element used in a substrate processing apparatus configured to heat a substrate supported by a substrate retainer by microwaves and process the substrate, the heating element including a dielectric material of an annular shape capable of generating heat by the microwaves. An inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer without contacting the substrate.

Abstract: There is provided a technique includes: a process chamber in which a substrate is processed; a plurality of microwave supply sources configured to supply predetermined microwaves for heating the substrate in the process chamber; and a controller configured to control the microwave supply sources such that while keeping constant a sum of outputs of the microwaves respectively supplied to the substrate from the plurality of microwave supply sources, at least one of the plurality of microwave supply sources is turned off, and periods in which the at least one of the plurality of microwave supply sources is turned off are different from each other.

Abstract: A process chamber configured to process at least one substrate; at least one heating device to heat the at least one substrate using an electromagnetic wave; a non-contact type temperature measurement device configured to measure a temperature of the at least one substrate; and a controller configured to acquire temperature data measured by the temperature measurement device, compare the measured temperature with a preset upper limit temperature and a preset lower limit temperature, lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is higher than the upper limit temperature, and lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is lower than the lower limit temperature.

Abstract: According to one aspect of technique described herein, there is provided a technique including; a process chamber in which at least one substrate is processed; an electromagnetic wave supply part configured to supply an electromagnetic wave to the at least one substrate; a substrate holding part configured to hold the at least one substrate and at least one susceptor for suppressing the electromagnetic wave from being adsorbed to an edge of the at least one substrate; a substrate transfer part configured to transfer the at least one substrate; and a controller configured to control the substrate transfer part so as to correct a position of the at least one susceptor.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a heat insulating plate in a substrate retainer to a processing temperature by an electromagnetic wave, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the processing temperature; (b) heating a test object provided with a chip that does not transmit a detection light of the thermometer and accommodated in the substrate retainer to the processing temperature, and measuring a temperature change of the chip by the thermometer until the processing temperature; (c) acquiring a correlation between the temperature change of the heat insulating plate and that of the chip based on measurement results; and (d) controlling a heater to heat the substrate based on the correlation and the temperature of the heat insulating plate measured by the thermometer.

Abstract: There is provided a technique that includes: a transfer chamber configured to transfer a substrate; at least two process chambers configured to process the substrate that is transferred from the transfer chamber by heating the substrate with a microwave generated from a heating device; and a cooling chamber spatially connected to the transfer chamber and disposed on a side wall of the transfer chamber between the at least two process chambers at an equal distance from the at least two process chambers, the cooling chamber including a first gas supplier configured to supply a purge gas that purges an internal atmosphere at a first gas flow rate and a first exhauster including an exhaust pipe configured to exhaust the purge gas, and the cooling chamber configured to cool the substrate heated by the microwave using the purge gas.

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

Abstract: There is provided a substrate processing apparatus that includes a substrate support configured to support one or more substrates, a process chamber in which the one or more substrates are processed, a gas supplier configured to supply gas, and a plasma generator including a plurality of first rod-shaped electrodes connected to a high-frequency power supply; and a second rod-shaped electrode installed between two first rod-shaped electrodes is grounded; and a buffer structure configured to accommodate the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and having a first wall surface on which a gas supply port that supplies gas into the process chamber is installed. Wherein the plasma generator is configured to convert gas into plasma by the plurality of first rod-shaped electrodes and the second rod-shaped electrode to supply the plasma-converted gas to the process chamber from the gas supply port.

Abstract: According to one aspect of the technique, there is provided a substrate processing apparatus including: a process housing including a process chamber in which a substrate is processed; a transfer housing provided adjacent to the process housing and comprising a transfer chamber wherein the substrate is transferred between the process chamber and the transfer chamber; a microwave generator configured to transmit a microwave to be supplied into the process chamber; a loading/unloading port connecting between the process chamber and the transfer chamber and through which the substrate is transferred; an opening/closing structure configured to open or close the loading/unloading port; and a detection sensor provided in the transfer chamber adjacent to the loading/unloading port and configured to detect the microwave leaking to the transfer chamber from the process chamber through the loading/unloading port while the opening/closing structure maintains the loading/unloading port closed.

Abstract: There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.

Abstract: There is provided a technique that includes: at least one process chamber configured to heat substrates; a cooling chamber configured to cool the substrates heated in the at least one process chamber; and a transfer machine configured to transfer the substrates, wherein the number of substrates loaded into the at least one process chamber by using the transfer machine is larger than the number of substrates loaded into the cooling chamber by using the transfer machine.

Abstract: There is provided a technique that includes: a transfer chamber configured to transfer a substrate; at least two process chambers configured to process the substrate that is transferred from the transfer chamber by heating the substrate with a microwave generated from a heating device; and a cooling chamber spatially connected to the transfer chamber and disposed on a side wall of the transfer chamber between the at least two process chambers at an equal distance from the at least two process chambers, the cooling chamber including a first gas supplier configured to supply a purge gas that purges an internal atmosphere at a first gas flow rate and a first exhauster including an exhaust pipe configured to exhaust the purge gas, and the cooling chamber configured to cool the substrate heated by the microwave using the purge gas.