Patents by Inventor Yuko Kaimoto
Yuko Kaimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7754619Abstract: A method of forming a liquid coating on a substrate that reduces the amount of consumption of the coating liquid and achieves a more even distribution of the thickness of the liquid coating film. The method may include supplying a solvent to a surface of a substrate, starting a supply of a coating liquid to the surface of the substrate while rotating the substrate at a first rotation speed, stopping a rotation of the substrate by decelerating the rotation of the substrate at a deceleration larger than 30000 rpm/sec at a point of time when the supply of the coating liquid is stopped, and then rotating the substrate at a second rotation speed. Accordingly, the dispense amount of the coating liquid is reduced and the film thickness of the coating liquid is flatten.Type: GrantFiled: July 2, 2007Date of Patent: July 13, 2010Assignee: Fujitsu Microelectronics LimitedInventors: Tomoaki Muramatsu, Yuko Kaimoto, Ichiro Omata
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Patent number: 7465529Abstract: A copolymer expressed by the following structural formula was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm2. A 0.45 ?m-wide L & S was formed at 130 mJ/cm2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.Type: GrantFiled: October 18, 2006Date of Patent: December 16, 2008Assignee: Fujitsu LimitedInventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto
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Publication number: 20080176410Abstract: A method of forming a liquid coating on a substrate that reduces the amount of consumption of the coating liquid and achieves a more even distribution of the thickness of the liquid coating film. The method may include supplying a solvent to a surface of a substrate, starting a supply of a coating liquid to the surface of the substrate while rotating the substrate at a first rotation speed, stopping a rotation of the substrate by decelerating the rotation of the substrate at a deceleration larger than 30000 rpm/sec at a point of time when the supply of the coating liquid is stopped, and then rotating the substrate at a second rotation speed. Accordingly, the dispense amount of the coating liquid is reduced and the film thickness of the coating liquid is flatten.Type: ApplicationFiled: July 2, 2007Publication date: July 24, 2008Inventors: Tomoaki Muramatsu, Yuko Kaimoto, Ichiro Omata
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Patent number: 7179580Abstract: A copolymer expressed by the following structural formula was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm2. A 0.45 ?m-wide L & S was formed at 130 mJ/cm2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.Type: GrantFiled: April 28, 2004Date of Patent: February 20, 2007Assignee: Fujitsu LimitedInventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto
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Publication number: 20070037090Abstract: A copolymer expressed by the following structural formula was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm2. A 0.45 ?m-wide L & S was formed at 130 mJ/cm2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.Type: ApplicationFiled: October 18, 2006Publication date: February 15, 2007Inventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto
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Publication number: 20040202961Abstract: A copolymer expressed by the following structural formula 1Type: ApplicationFiled: April 28, 2004Publication date: October 14, 2004Applicant: FUJITSU LIMITEDInventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto
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Patent number: 6790589Abstract: A radiation sensitive material comprising a copolymer including itaconic anhydride and methods of using such radiation sensitive materials in methods for forming a pattern.Type: GrantFiled: December 21, 2001Date of Patent: September 14, 2004Assignee: Fujitsu LimitedInventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto
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Publication number: 20020076645Abstract: A copolymer expressed by the following structural formula 1Type: ApplicationFiled: December 21, 2001Publication date: June 20, 2002Applicant: FUJITSU LIMITEDInventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto
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Patent number: 6344304Abstract: A radiation sensitive composition comprising a copolymer having a structural unit of (me)acrylonitrile and a structural unit generating an alkali soluble group and a substance generating an acid by application of radiation.Type: GrantFiled: November 12, 1999Date of Patent: February 5, 2002Assignee: Fujitsu LimitedInventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto
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Patent number: 6120977Abstract: An exposure technique which accomplishes high transparency and the prevention of influence of reflected light in the ultraviolet region of KrF excimer laser light, the technique being capable of decreasing reflected light by employing a base polymer having high transparency in the ultraviolet region and by employing a bleaching agent in combination with a photo acid generator, the bleaching agent being capable of preventing the formation of eaves in an upper portion of a resist pattern.Type: GrantFiled: April 3, 1996Date of Patent: September 19, 2000Assignee: Fujitsu LimitedInventors: Yuko Kaimoto, Satoshi Takechi, Akira Oikawa
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Patent number: 6004720Abstract: A copolymer expressed by the following structural formula ##STR1## was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm.sup.2. A 0.45 .mu.m-wide L & S was formed at 130 mJ/cm.sup.2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.Type: GrantFiled: December 29, 1997Date of Patent: December 21, 1999Assignee: Fujitsu LimitedInventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto
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Patent number: 5660969Abstract: A chemical amplification resist contains a polymer of adamantyl group and aliphatic ester, wherein the aliphatic ester has a carbonyl group such that the chemical amplification resist generates carboxylic acid upon exposure to radiation.Type: GrantFiled: March 4, 1996Date of Patent: August 26, 1997Assignee: Fujitsu LimitedInventor: Yuko Kaimoto
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Patent number: 5585222Abstract: A resist composition and a process for forming a resist pattern using a resist composition are disclosed. The present composition includes 100 parts by weight of a copolymer of a 2-norbornene-2-substituent unit and an acrylic acid ester unit of the formula I; ##STR1## wherein, X is a cyano or chloro group, R is tert-butyl, dimethylbenzyl, or tetrahydropyranyl, m is an integer of 9 to 2390, and n is an integer of 21 to 5180, and 1 to 20 parts by weight of a photo acid generator. A finely-resolved resist pattern with high sensitivity and good dry etch resistance is obtained by the present composition and present process for forming the resist pattern.Type: GrantFiled: September 17, 1992Date of Patent: December 17, 1996Assignee: Fujitsu LimitedInventors: Yuko Kaimoto, Koji Nozaki
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Patent number: 5585219Abstract: A resist composition and a process for forming a resist pattern using a resist composition are disclosed. The present composition includes 100 parts by weight of a copolymer of a 2-norbornene-2-substituent unit and an acrylic acid ester unit of the formula I; ##STR1## wherein, X is a cyano or chloro group, R is tert-butyl, dimethylbenzyl, or tetrahydropyranyl, m is an integer of 9 to 2390, and n is an integer of 21 to 5180, and 1 to 20 parts by weight of a photo acid generator. A finely-resolved resist pattern with high sensitivity and good dry etch resistance is obtained by the present composition and present process for forming the resist pattern.Type: GrantFiled: May 10, 1995Date of Patent: December 17, 1996Assignee: Fujitsu LimitedInventors: Yuko Kaimoto, Koji Nozaki
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Patent number: 5506088Abstract: Improved chemically amplified resist is provided that comprises 100 parts by weight of a copolymer produced from a first monomer unit having a recurrent acid labile pendant group that changes the polarity of the polymer and a second monomer unit having an alkali-soluble group and 1 to 20 parts by weight of a photo acid generator.Type: GrantFiled: November 3, 1994Date of Patent: April 9, 1996Assignee: Fujitsu LimitedInventors: Koji Nozaki, Ryosuke Tokutomi, Yuko Kaimoto, Satoshi Takechi
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Patent number: 5443690Abstract: A pattern formation material capable of keeping dimensional accuracy of a pattern at a desired level even after a polymer is left standing for a long time after exposure and before baking, and a method of forming such a pattern formation material, which comprises a copolymer containing units containing a polycyclic aromatic ring, a condensed ring having at least one aromatic ring, or an aromatic ring having, as a substitution group, an alicyclic group, a branched alkyl or a halogen, and units from a monomer containing a photosensitive group, and a compound generating an acid by irradiation to ultraviolet rays.Type: GrantFiled: March 7, 1994Date of Patent: August 22, 1995Assignee: Fujitsu LimitedInventors: Satoshi Takechi, Makoto Takahashi, Yuko Kaimoto