Abstract: The present invention provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while the substrate is heated, an organic silane and ozone are reacted to form a silicon oxide film on the substrate under normal pressure or reduced pressure. The present invention also provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while heating the substrate, organic silane, gas containing dopants such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film or the like is formed on the substrate under normal pressure or reduced pressure.

Abstract: The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.

Abstract: A, method for forming semiconductor device, includes forming an insulating film on a body by chemical vapor deposition, at low temperature raising the temperature of, the body, and exposing the body to plasma gas.

Abstract: The present invention provides a method for forming a chemical vapor deposition film which is suitable for an interlevel insulator between Al and Al or an interlevel insulator between Al and a gate, and provides an improved chemical vapor deposition film suitable for mass production. An organic siloxane or alkoxysilane and an alkoxy compound of germanium are mixed in a vapor phase, and reacted with oxygen or ozone to thereby form a thin glass film composed of a two-component system of silicon oxide and germanium oxide on a substrate.

Abstract: The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a film used for flattening a substrate surface having unevenness in a manufacturing process of a semiconductor device, and has for its object to provide a method of manufacturing a semiconductor device for making it possible to flatten a film by processing at a lower temperature without deteriorating the film quality.The present invention is structured including a process of depositing a film composed of BPSG or PSG on a substrate surface having unevenness, a process of depositing a SiO.sub.2 film or depositing a film composed of BPSG or PSG having concentration lower than phosphorus concentration or boron concentration in the film or a SiO.sub.2 film on the film, and a process of melting and fluidizing these films so as to flatten them by applying heat treatment.

Abstract: In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.

Abstract: In a process for producing a semiconductor device, deposition of a CVD-SiO.sub.2 film at a given first O.sub.3 concentration according to a TEOS-SiO.sub.3 reaction is followed by further deposition of a CVD-SiO.sub.2 film at a second O.sub.3 concentration higher than the first O.sub.3 concentration according to the TEOS-O.sub.3 reaction to form a CVD-SiO.sub.2 film having a predetermined thickness and a surface little uneven.