Abstract: The positions at which electrode pads are arranged can be made more flexible, and electrical interconnects to be installed can be reduced. In addition, the degree of integration of a chip increases, making it possible to realize a large-scale device (optical switch etc.). In an optical module of the present invention, an interposer (an electrical connection intermediary component with electrode pins attached onto upper and lower faces in an array) is laid over a chip that includes a device configured by using a planar lightwave circuit (PLC) fixed onto a fixing metal plate, and a control substrate for driving the device is laid over the interposer. These components are mechanically fixed by a fixing screw or the like, and the electrode pads of the chip and the control substrate are connected to each other via the interposer.

Abstract: A cable includes a twisted pair electrical wire having a pair of electrical wires twisted together, and a dielectric covering the twisted pair electrical wire. A dielectric loss tangent of the dielectric is greater than 2.5×10?4.

Abstract: Provided is a compound represented by Formula (1A) below wherein the symbols are as defined in the description: Also disclosed are a composition containing at least one of the compound and a formed article of the compound.

Abstract: A two-core cable includes two coated wires and a metal tape. Each of the two coated wires includes a conductor and an insulating layer that covers an outer surface of the conductor, and the metal tape is configured to collectively cover outer surfaces of the two coated wires. The metal tape has a structure in which a resin layer and a metal layer are stacked, and the resin layer is located towards the two coated wires relative to the metal layer.

Abstract: The present invention provides a non-replicating poxvirus vector comprising a nucleic acid sequence encoding a Staphylococcus aureus antigen, wherein the nucleic acid sequence encoding a Staphylococcus aureus antigen comprises a nucleic acid sequence having at least 70% sequence identity to a nucleic acid sequence selected from SEQ ID NOs: 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, and 16. The present invention also provides compositions and uses of the vectors in methods of medical treatment.

Abstract: An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2?1.

Abstract: A pattern forming method is provided. The pattern forming method includes a first step of forming a resist pattern including a lactone group-containing skeleton above an etched layer provided on a substrate; a second step of performing plasma processing using a hydrogen-containing gas to lower a glass transition temperature or a softening point of the resist pattern; and a third step of transferring the resist pattern after the plasma processing to the etched layer by etching, and forming the pattern of the etched layer.

Abstract: An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2?1.

Abstract: A semiconductor wafer heat treatment apparatus and method, which can carry out a heat treatment to suppress variations in line widths within a surface on a semiconductor wafer and the like, includes: a heating plate for heating a semiconductor wafer to a predetermined temperature; a temperature measuring unit for measuring temperatures when heating the semiconductor wafer or a semiconductor wafer equivalent placed on the heating plate, at portions divided into a plurality of regions; and a controller for controlling the temperatures of the semiconductor wafer, and based on the temperature measurement result of the temperature measuring unit, the controller controls the temperature in heating the semiconductor wafer, for each of the plurality of regions. In cooling after the heating process, based on the temperature measurement result, the controller controls the temperature in cooling the semiconductor wafer, for each of the plurality of regions.

Abstract: A heat treatment apparatus for preventing quality defects of an object to be heat-treated even when sublimating components produced in heat treatment become solids and drop down in the heat treatment apparatus, wherein a gas generated when heating an object to be heat-treated, coated with a coating solution and placed on a stage is passed through a trap made of a permeable porous film and is exhausted from an exhaust port of a cover and wherein solids produced and dropping down when gas passed through the trap of the permeable porous film solidifies at a top plate of the cover are trapped by the trap.

Abstract: A method of forming resist patterns able to decrease development defects caused by deposition of a resist film or redeposition of semi-insolubles in a development process and rinse process using general systems, and a method of producing a semiconductor device using the same, having lithographic process for exposing an element formation region of the resist film at the optimal exposure amount able to develop the resist film via a mask and exposing the circumference region other than the element formation region at an exposure amount not exceeding that exposure amount able to develop the resist film, due to these exposing, reducing the difference of developability and thickness after development of the resist film by which the resist patterns are formed, reducing the difference of surface conditions in the element formation region and circumference region, and able to smoothly remove development defects formed at the time of rinsing or by high speed rotation.

Abstract: There is provided a semiconductor wafer heat treatment apparatus and method, which can carry out a heat treatment to suppress variations in line widths within surface on a semiconductor wafer and the like, which includes: a heating plate for heating a semiconductor wafer to a predetermined temperature; a temperature measuring unit for measuring temperatures when heating the semiconductor wafer or a semiconductor wafer equivalent placed on the heating plate, at portions divided into a plurality of regions; and a controller for controlling the temperatures of the semiconductor wafer, and based on the temperature measurement result of the temperature measuring unit, the controller controls the temperature in heating the semiconductor wafer, for each of the plurality of regions. In cooling after the heating process, based on the temperature measurement result, the controller controls the temperature in cooling the semiconductor wafer, for each of the plurality of regions.

Abstract: A heat treatment apparatus for preventing quality defects of an object to be heat-treated even when sublimating components produced in heat treatment become solids and drop down in the heat treatment apparatus, wherein a gas generated when heating an object to be heat-treated, coated with a coating solution and placed on a stage is passed through a trap made of a permeable porous film and is exhausted from an exhaust port of a cover and wherein solids produced and dropping down when gas passed through the trap of the permeable porous film solidifies at a top plate of the cover are trapped by the trap.

Abstract: A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.

Abstract: A method of forming a pattern in which production of reaction products in the interface between an organic anti-reflective coating and a radiation sensitive material coating is suppressed, the number of residues of an etchable layer formed after etching is decreased, and which provides a etched pattern having high resolution and good dimensional accuracy. According to the method, an etchable layer (11) composed of polysilicon coating an organic anti-reflective coating (12), and a radiation sensitive material coating (13) composed of a chemically amplified resist material containing as acid generators both (a) onium salt compound and (b) at least one of a sulfone compound and a sulfonate compound are formed on a semiconductor substrate (10), the radiation sensitive material coating (13) is imagewise exposed through the mask (14) and developed to form a patterned radiation sensitive material coating (13b).

Abstract: A chemically amplified resist composition is disclosed which shows a high sensitivity, high resolution, excellent processing adaptability and excellent processing stability, which can form good pattern profile and which is suited as a finely processable material for use in manufacturing integrated circuit elements or the like. The chemically amplified resist composition comprises at least (a) an organic material containing a substituent or substituents capable of being released in the presence of an acid and (b) compounds capable of generating an acid upon exposure to radiation (acid-generators), composed of at least one onium salt and at least one of sulfone compounds and sulfonate compounds. This chemically amplified resist composition preferably further contains a basic compound.

Abstract: Disclosed is a chemically amplified radiation sensitive composition containing a hydroxystyrene resin and an onium salt precursor which generates a fluorinated alkanesulfonic acid as a photoacid generator, wherein the photoacid generator is a sulfonium or iodonium salt of a fluorinated alkane sulfonic acid, represented by formula (I): Y+ASO3−  (I) wherein A represents CF3CHFCF2 or CF3CF2CF2CF2; and Y represents wherein R1, R2, R3, R4, and R5 each independently represent an alkyl group, a monocyclic or bicyclic alkyl group, a cyclic alkylcarbonyl group, a phenyl group, a naphthyl group, an anthryl group, a peryl group, a pyryl group, a thienyl group, an aralkyl group, or an arylcarbonylmethylene group, or any two of R1, R2, and R3 or R4 and R5 together represent an alkylene or an oxyalkylene which forms a five- or six-membered ring together with the interposing sulfur or iodine, said ring being optionally condensed with aryl groups.

Abstract: A chemically amplified resist composition is disclosed which shows a high sensitivity, high resolution, excellent processing adaptability and excellent processing stability, which can form good pattern profile and which is suited as a finely processable material for use in manufacturing integrated circuit elements or the like. The chemically amplified resist composition comprises at least (a) an organic material containing a substituent or substituents capable of being released in the presence of an acid and (b) compounds capable of generating an acid upon exposure to radiation (acid-generators), composed of at least one onium salt and at least one of sulfone compounds and sulfonate compounds. This chemically amplified resist composition preferably further contains a basic compound.

Abstract: A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.

Abstract: A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.