Abstract: A preparation method of indium oxide with stable morphology includes: (1) mixing indium oxide powder and bismuth oxide powder according to a mass ratio of 1:0.1-0.5 to obtain a powder mixture; (2) putting the powder mixture into a ball mill for ball milling at room temperature to obtain a uniform powder mixture; (3) putting the obtained uniform powder mixture into a muffle furnace and calcining at 700-1000° C.; and (4) obtaining the indium oxide with cubic stable morphology after the muffle furnace naturally cools to room temperature. The method has advantages of simple synthesis process, short synthesis period, high sample yield, no need of complicated equipment, and morphology of the obtained indium oxide can be maintained after being heated at a high temperature within 1000° C. for 2 hours. An electrochemical sensor prepared by using the indium oxide obtained by the method has better selectivity to nonane.

Abstract: A preparation method of indium oxide with stable morphology includes: (1) mixing indium oxide powder and bismuth oxide powder according to a mass ratio of 1:0.1-0.5 to obtain a powder mixture; (2) putting the powder mixture into a ball mill for ball milling at room temperature to obtain a uniform powder mixture; (3) putting the obtained uniform powder mixture into a muffle furnace and calcining at 700-1000° C.; and (4) obtaining the indium oxide with cubic stable morphology after the muffle furnace naturally cools to room temperature. The method has advantages of simple synthesis process, short synthesis period, high sample yield, no need of complicated equipment, and morphology of the obtained indium oxide can be maintained after being heated at a high temperature within 1000° C. for 2 hours. An electrochemical sensor prepared by using the indium oxide obtained by the method has better selectivity to nonane.