Abstract: A nickel-base alloy welding material according to an embodiment comprises: Cr (chromium) larger than 30.0% and less than or equal to 36.0% by mass; C (carbon) less than or equal to 0.050% by mass; Fe (iron) larger than or equal to 1.00% and less than or equal to 3.00% by mass; Si (silicon) less than or equal to 0.50% by mass; Nb (niobium)+Ta (tantalum) less than or equal to 3.00% by mass; Ti (titanium) less than or equal to 0.70% by mass; Mn (manganese) larger than or equal to 0.10% and less than or equal to 3.50% by mass; Cu (copper) less than or equal to 0.5% by mass, and a remainder is Ni and unavoidable impurities.

Abstract: A tea bag type extraction bag to obtain extraction liquid includes bag main body formed of water permeable filter sheet, pair of thin plate-like members provided on outer surfaces of two opposing faces of bag main body; and extraction material filled in bag main body. Respective outer surfaces of bag main body, thin plate-like member includes upper edge portion attached to upper part of bag main body, gripping portion continuous with upper edge portion via fold line and extends from fold line toward lower edge of bag main body, and leg portion extending from upper edge of bag main body toward lower edge of bag main body. Upper edge of upper edge portion is flush with upper edge of bag main body, and gripping portion is able to be folded upward along fold line so that leading end part thereof projects from upper edge of bag main body.

Abstract: A nickel-base alloy welding material according to an embodiment comprises: Cr (chromium) larger than 30.0% and less than or equal to 36.0% by mass; C (carbon) less than or equal to 0.050% by mass; Fe (iron) larger than or equal to 1.00% and less than or equal to 3.00% by mass; Si (silicon) less than or equal to 0.50% by mass; Nb (niobium)+Ta (tantalum) less than or equal to 3.00% by mass; Ti (titanium) less than or equal to 0.70% by mass; Mn (manganese) larger than or equal to 0.10% and less than or equal to 3.50% by mass; Cu (copper) less than or equal to 0.5% by mass, and a remainder is Ni and unavoidable impurities.

Abstract: A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.

Abstract: In a communication system comprising plural communication terminals, each having a relay function, and a host having a relay function and a route control function, during route search, the communication terminal adds an ID of a self-terminal to a route search packet and broadcasts the packet. On receipt of a route search packet, the communication terminal adds a ID of the self-terminal to the received route search packet if the ID of the self-terminal is not yet added to the route search packet, and broadcasts the packet. The host obtains information of a route up to the communication terminal on a basis of the received route search packet, and notifies the communication terminal of the obtained route information.

Abstract: A method for cleaning a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees comprises contacting the semiconductor surface with a cleaning liquid composition including an aliphatic polycarboxylic acid, an organic solvent having a hydroxyl group and/or an ether group, an anionic surfactant and water.

Abstract: A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.

Abstract: There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

Abstract: A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a pH of less than 3.0. This washing liquid has excellent performance in removing micro particles and metal impurities adhering to the surface of a semiconductor substrate after CMP and does not corrode a metal wiring material.

Abstract: The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials. The cleaning solution for cleaning substrates of electronic materials comprises an organic acid compound and at least one selected from the group consisting of dispersants and surfactants.

Abstract: A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.

Abstract: In a communication system comprising plural communication terminals each having a relay function and a host having a relay function and a route control function, during route search, the communication terminal adds an ID of the self-terminal to a route search packet and broadcasts the packet. On receipt of a route search packet, the communication terminal adds the ID of the self-terminal to the received route search packet if the ID of the self-terminal is not yet added to the route search packet, and broadcasts the packet. The host obtains information of route up to the communication terminal on the basis of the received route search packet, and notifies the communication terminal of the obtained route information.

Abstract: A cleaning liquid composition used for cleaning a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees is provided, the cleaning liquid composition including an aliphatic polycarboxylic acid and an organic solvent having a hydroxyl group and/or an ether group, and the cleaning liquid composition having a contact angle of at most 40 degrees when dropped on the semiconductor substrate. Also provided is a method for cleaning a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees by means of the above cleaning liquid composition.

Abstract: The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials.

Abstract: A high-pressure treatment apparatus comprises a first solid reservoir, a second solid reservoir connected to the first solid reservoir through a first connecting pipe, a high-pressure reactor connected to the second solid reservoir through a second connecting pipe, means for feeding reaction medium into the high-pressure reactor, a first sealing unit and a second sealing unit intervened respectively in the first connecting pipe and second connecting pipe, a first fluid feed unit for feeding a first fluid between the first sealing unit and the second sealing unit, a second fluid feed unit for feeding a second fluid between the second sealing unit and the high-pressure reactor, and means for opening the second sealing unit at the time of shut-off of the first sealing unit and controlling the first fluid and the second fluid to form a pressure-gradient so that pressure between the first sealing unit and the second sealing unit and pressure between the second sealing unit and the high-pressure reactor decrease gr

Abstract: The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials. The cleaning solution for cleaning substrates of electronic materials comprises an organic acid compound and at least one selected from the group consisting of dispersants and surfactants.

Abstract: A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a pH of less than 3.0. This washing liquid has excellent performance in removing micro particles and metal impurities adhering to the surface of a semiconductor substrate after CMP and does not corrode a metal wiring material.

Abstract: There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

Abstract: A display of a card exchange device is split by a split line according to the number of card exchange persons and their seating state, and each card data is displayed in an area of a position corresponding to the seating state. Accordingly, an electronic card exchange device that is effective in business talks just after the card exchange can be provided.

Abstract: A display of a card exchange device is split by a split line 401 according to the number of card exchange persons and their sating state, and each card data is displayed in an area of a position corresponding to the seating state. Accordingly, an electronic card exchange device that is effective in business talks just after the card exchange can be provided.