Patents by Inventor Yumiko Hamada

Yumiko Hamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device manufacturing method
    Patent number: 6225184
    Abstract: A semiconductor device manufacturing method where the first insulating film, the first semiconductor film, and the second insulating film are formed in sequence on or above a semiconductor substrate. A resist mask having a window therein is formed on the second insulating film. A first hole is formed in the second insulating film via the window or the first hole is formed in the second insulating film and the first semiconductor film. An overetching using a halogen compound gas forms a sidewall on an inner peripheral surface of the first hole. A second hole having a small diameter than the first hole is formed by etching through the first hole surrounded by the sidewall and the resist.
    Type: Grant
    Filed: March 10, 1999
    Date of Patent: May 1, 2001
    Assignee: Fujitsu Limited
    Inventors: Manabu Hayashi, Yumiko Hamada
  • Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound
    Patent number: 5567661
    Abstract: A method of manufacturing a semiconductor device including the steps of: preparing a semiconductor substrate having convexities and concavities on the surface thereof; and generating plasma by using organic silicon having silazane bonding and oxidant and depositing a planarized insulating film on the semiconductor substrate by plasma chemical vapor deposition. The organic silicon may be HMCTSZ and the substrate temperature during deposition is preferably not higher than about 100.degree. C., e.g. 50.degree. C.
    Type: Grant
    Filed: June 3, 1994
    Date of Patent: October 22, 1996
    Assignee: Fujitsu Limited
    Inventors: Hidetoshi Nishio, Takako Furuse, Yumiko Hamada, Hiroyuki Uesugi