Abstract: A polymeric composition includes an ethylene-based polymer and a free radical scavenger having structure (I), wherein, R1 and R2 are independently linear, or branch form alkyl, alkenyl, phenyl or aryl group moieties with or without substituents and each of R1 and R2 have a carbon number from 1 to 100, further wherein the polymeric composition is thermoplastic.

Abstract: A composition comprising at least the following components: A) one or more ethylene/alpha-olefin interpolymers, which comprise ?3.5 wt % of a non-conjugated diene, based on the weight of the one or more ethylene/alpha-olefin interpolymers; B) an acid acceptor selected from the following: MgO, ZnO, or combination thereof.

Abstract: A polymeric composition includes 90 wt % to 99 wt % of an ethylene-based polymer based on a total weight of the polymeric composition; 0.1 wt % to 1 wt % of a hindered amine light stabilizer based on the total weight of the polymeric composition; and 0.1 wt % to 5.0 wt % of at least one of MgO, Mg (OH)2, ZnO and Zn (OH)2 based on the total weight of the polymeric composition.

Abstract: The present disclosure provides a process. In an embodiment, the process includes forming an aqueous matte coating composition including A1) beads of a first acrylic polymer having an average particle diameter from 0.1 ?m to 2 ?m; A2) beads of a second acrylic polymer having an average particle diameter from 0.5 ?m to 30 ?m; B) an acrylic polymer binder; C) from 0.15 wt % to 2.5 wt % of a slip additive; D) from 0.10 wt % to 0.30 wt % of a defoaming agent; E) from 0.8 wt % to 1.5 wt % of a rheology modifier; and F) from 0.01 wt % to 0.1 wt % of at least one wetting agent. The aqueous matte coating composition is applied to a substrate and then dried to form a coating on the substrate.

Abstract: A polymer composite comprising quantum dots. The polymer composite comprises: (a) quantum dots; (b) a first polymer having a molecular weight from 1,000 to 100,000 and a solubility parameter from 12 to 17 (J/cm3)1/2; (c) a second polymer comprising polymerized units of a first compound comprising at least one readily polymerizable vinyl group and having a molecular weight from 72 to 500, wherein the second polymer has a solubility parameter from 16.5 to 20 (J/cm3)1/2; and (d) a third polymer comprising polymerized units of a second compound comprising at least two readily polymerizable vinyl groups and having a molecular weight from 72 to 2000; wherein the first polymer encapsulates the quantum dots; wherein a readily polymerizable vinyl group is part of a (meth)acrylate ester group or is attached directly to an aromatic ring.

Abstract: A composition comprising at least the following components: A) one or more ethylene/alpha-olefin interpolymers, which comprise ?3.5 wt % of a non-conjugated diene, based on the weight of the one or more ethylene/alpha-olefin interpolymers; B) an acid acceptor selected from the following: MgO, ZnO, or combination thereof.

Abstract: The present invention provides methods for making polymerizable monomer compositions comprising purifying a (b) monomer mixture of (i) one or more monomers having at least two polymerizable vinyl groups and (ii) one or more monomers having a single polymerizable vinyl group as part of a (meth)acrylate ester group by any one or more of treating the monomer mixture in an activated porous alumina or silica column, sieve drying the monomer mixture in a vacuum followed by drying over dried molecular sieves having average pore sizes of from 2 to 20 Angstroms, freeze-pump-thaw (FPT) treating by freezing the monomer mixture in a vessel or container to a temperature below ?75° C., degassing the monomer mixture by application of vacuum in the range of 102 to 10?2 Pa, sealing the vessel or container under vacuum, and thawing the composition to room temperature; and, combining in an inert gas atmosphere the resulting monomer mixture (b) with a composition (a) of quantum dots in dry form or organic solvent solution.

Abstract: A polymer composite comprising quantum dots. The polymer composite comprises: (a) quantum dots; (b) a first polymer having a molecular weight from 1,000 to 100,000 and a solubility parameter from 12 to 17 (J/cm3)1/2; (c) a second polymer comprising polymerized units of a first compound comprising at least one readily polymerizable vinyl group and having a molecular weight from 72 to 500, wherein the second polymer has a solubility parameter from 16.5 to 20 (J/cm3)1/2; and (d) a third polymer comprising polymerized units of a second compound comprising at least two readily polymerizable vinyl groups and having a molecular weight from 72 to 2000; wherein the first polymer encapsulates the quantum dots; wherein a readily polymerizable vinyl group is part of a (meth)acrylate ester group or is attached directly to an aromatic ring.

Abstract: Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.

Abstract: Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may be mixed with a solution containing chalcogenocyanate (xCN)-based ligands. The mixture may be separated into a supernatant and a flocculate. The flocculate may be dispersed with a solvent to form a subsequent dispersion of NCs capped with xCN-based ligands.

Abstract: The present invention provides methods for making polymerizable monomer compositions comprising purifying a (b) monomer mixture of (i) one or more monomers having at least two polymerizable vinyl groups and (ii) one or more monomers having a single polymerizable vinyl group as part of a (meth)acrylate ester group by any one or more of treating the monomer mixture in an activated porous alumina or silica column, sieve drying the monomer mixture in a vacuum followed by drying over dried molecular sieves having average pore sizes of from 2 to 20 Angstroms, freeze-pump-thaw (FPT) treating by freezing the monomer mixture in a vessel or container to a temperature below ?75° C., degassing the monomer mixture by application of vacuum in the range of 102 to 10?2 Pa, sealing the vessel or container under vacuum, and thawing the composition to room temperature; and, combining in an inert gas atmosphere the resulting monomer mixture (b) with a composition (a) of quantum dots in dry form or organic solvent solution.

Abstract: Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Abstract: Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may be mixed with a solution containing chalcogenocyanate (xCN)-based ligands. The mixture may be separated into a supernatant and a flocculate. The flocculate may be dispersed with a solvent to form a subsequent dispersion of NCs capped with xCN-based ligands.

Abstract: Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.

Abstract: Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

Abstract: Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Abstract: Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.