Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are presented. In embodiments the methods of manufacturing include depositing a first bonding layer on a first substrate, wherein the first substrate comprises a semiconductor substrate and a metallization layer. The first bonding layer and the semiconductor substrate are patterned to form first openings. A second substrate is bonded to the first substrate. After the bonding the second substrate, the second substrate is patterned to form second openings, at least one of the second openings exposing at least one of the first openings. After the patterning the second substrate, a third substrate is bonded to the second substrate, and after the bonding the third substrate, the third substrate is patterned to form third openings, at least one of the third openings exposing at least one of the second openings.

Abstract: Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.

Abstract: A semiconductor chip and a manufacturing method thereof are provided. The semiconductor chip includes: an array of pillar structures, disposed on a front surface of the semiconductor chip, and respectively including a ground pillar and multiple working pillars laterally spaced apart from and substantially parallel with a line portion of the ground pillar; and dummy pillar structures, disposed on the front surface of the semiconductor chip and laterally surrounding the pillar structures. Active devices formed inside the semiconductor chip are electrically connected to the working pillar. The ground pillars of the pillar structures and the dummy pillar structures are electrically connected to form a current pathway on the front surface of the semiconductor chip.

Abstract: A semiconductor device includes a substrate, one or more wiring layers disposed over the substrate, a passivation layer disposed over the one or more wiring layers, a first conductive layer disposed over the passivation layer, a second conductive layer disposed over the first conductive layer, an isolation structure formed in the first and second conductive layers to isolate a part of the first and second conductive layers, and a first metal pad disposed over the isolation structure and the part of the first and second conductive layers. In one or more of the foregoing or following embodiments, the semiconductor device further includes a second metal pad disposed over the second conductive layer and electrically isolated from the first metal pad.

Abstract: A method includes forming an interconnect structure over a semiconductor substrate. The interconnect structure includes a plurality of dielectric layers, and the interconnect structure and the semiconductor substrate are in a wafer. A plurality of metal pads are formed over the interconnect structure. A plurality of through-holes are formed to penetrate through the wafer. The plurality of through-holes include top portions penetrating through the interconnect structure, and middle portions underlying and joining to the top portions. The middle portions are wider than respective ones of the top portions. A metal layer is formed to electrically connect to the plurality of metal pads. The metal layer extends into the top portions of the plurality of through-holes.

Abstract: The present invention provides a photosensitive resin composition, comprising: (a) photo-polymerizable unsaturated compound, (b) hydroxyurethane compound, and (c) photoinitiator. The photosensitive resin composition can be used as photoresist coating for dry film photoresist to manufacture the electronic components, such as print circuit board and so on. Further, the (b) hydroxyurethane compound having [CC]/[NH2] between 0.5 and 0.9, which increases the resolution, adhesion, and stripping ability of photosensitive resin composition for dry film photoresist, and improves the effectiveness and the quality of dry film photoresist for manufacturing printed circuit board and other electric component.

Abstract: The present invention provides a photosensitive resin composition, comprising: (a) photo-polymerizable unsaturated compound, (b) hydroxyurethane compound, and (c) photoinitiator. The photosensitive resin composition can be used as photoresist coating for dry film photoresist to manufacture the electronic components, such as print circuit board and so on. Further, the (b) hydroxyurethane compound having [CC]/[NH2] between 0.5 and 0.9, which increases the resolution, adhesion, and stripping ability of photosensitive resin composition for dry film photoresist, and improves the effectiveness and the quality of dry film photoresist for manufacturing printed circuit board and other electric component.

Abstract: A method for making an ordered magnetic alloy includes (a) providing a thermally conductive base having opposite first and second surfaces; (b) forming a thermal barrier layer on the first surface of the thermally conductive base; (c) forming a disordered magnetic alloy layer on the thermal barrier layer, the disordered magnetic alloy layer being made from a disordered alloy which contains a first metal selected from Fe, Co, and Ni, and a second metal selected from Pt and Pd; and (d) after step (c), applying a transient heat to the thermally conductive base to cause rapid thermal expansion of the thermally conductive base, which, in turn, causes generation of an in-plane tensile stress in the disordered magnetic alloy layer.

Abstract: An water/alcohol soluble electron-injection/hole-blocking composite layer contains a conjugated polymer grafted with a side chain crown ether and with pseudo-metallic state of metal-ion stabilized by the crown ether (to reduce electron-injection barrier and facilitate electron transport), and a polymer with hole-blocking function. This composite layer is able to improve the performance of an organic light emitting diode with oxygen- and moisture-stable cathode (such as Al and Au), and the performance of an organic solar cell.

Abstract: A method for making an ordered magnetic alloy includes (a) providing a thermally conductive base having opposite first and second surfaces; (b) forming a thermal barrier layer on the first surface of the thermally conductive base; (c) forming a disordered magnetic alloy layer on the thermal barrier layer, the disordered magnetic alloy layer being made from a disordered alloy which contains a first metal selected from Fe, Co, and Ni, and a second metal selected from Pt and Pd; and (d) after step (c), applying a transient heat to the thermally conductive base to cause rapid thermal expansion of the thermally conductive base, which, in turn, causes generation of an in-plane tensile stress in the disordered magnetic alloy layer.

Abstract: An water/alcohol soluble electron-injection/hole-blocking composite layer contains a conjugated polymer grafted with a side chain crown ether and with pseudo-metallic state of metal-ion stabilized by the crown ether (to reduce electron-injection barrier and facilitate electron transport), and a polymer with hole-blocking function. This composite layer is able to improve the performance of an organic light emitting diode with oxygen- and moisture-stable cathode (such as Al and Au), and the performance of an organic solar cell.