Abstract: A semiconductor package includes a circuit board having an inner circuit pattern and a plurality of contact pads connected to the inner circuit pattern, at least one integrated circuit (IC) device on the circuit board and making contact with the contact pads, a mold on the circuit board, the mold fixing the IC device to the circuit board, and a surface profile modifier on a surface of the IC device and a surface of the mold, and the surface profile modifier enlarging a surface area of the IC device and the mold to dissipate heat.

Abstract: Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.

Abstract: A semiconductor package includes a circuit board having an inner circuit pattern and a plurality of contact pads connected to the inner circuit pattern, at least one integrated circuit (IC) device on the circuit board and making contact with the contact pads, a mold on the circuit board, the mold fixing the IC device to the circuit board, and a surface profile modifier on a surface of the IC device and a surface of the mold, and the surface profile modifier enlarging a surface area of the IC device and the mold to dissipate heat.

Abstract: A heat spreader is formed on a first semiconductor package and a second semiconductor package adjacent to the first semiconductor package, and first and second thermoelectric modules are included between the first and second semiconductor packages and the heat spreader. The first and second thermoelectric modules are formed to have opposite polarities, and the heat spreader heated by the first thermoelectric module is cooled due to activation of the second thermoelectric module.

Abstract: According to example embodiments, a semiconductor package includes a lower package, upper packages on the lower package and laterally spaced apart from each other, a lower heat exhaust part between the lower package and the upper packages, an intermediate heat exhaust part between the upper packages and connected to the lower heat exhaust part, and an upper heat exhaust part on the upper packages and connected to the intermediate heat exhaust part.

Abstract: A semiconductor package includes a circuit board having an inner circuit pattern and a plurality of contact pads connected to the inner circuit pattern, at least one integrated circuit (IC) device on the circuit board and making contact with the contact pads, a mold on the circuit board, the mold fixing the IC device to the circuit board, and a surface profile modifier on a surface of the IC device and a surface of the mold, and the surface profile modifier enlarging a surface area of the IC device and the mold to dissipate heat.

Abstract: A semiconductor package and an electronic system including the same include a package board having an electric circuit pattern. A semiconductor chip is mounted on the package board and electrically connected with the circuit pattern of the package board. A non-contact temperature detector is provided with the semiconductor package and detects a temperature of an external heat source without making contact with the external heat source. A temperature controller controls the semiconductor chip according to the temperature of the external heat source that is detected by the non-contact temperature detector.

Abstract: A stack package usable in a three-dimensional (3D) system-in-package (SIP) includes a first semiconductor chip, a second semiconductor chip, and a supporter. The first semiconductor chip includes a through silicon via (TSV), and the second semiconductor chip is stacked on the first semiconductor chip and is electrically connected to the first semiconductor chip through the TSV of the first semiconductor chip. The supporter is attached onto the first semiconductor chip so as to be spaced apart from an edge of the second semiconductor chip.

Abstract: A semiconductor package includes a circuit board having an inner circuit pattern and a plurality of contact pads connected to the inner circuit pattern, at least one integrated circuit (IC) device on the circuit board and making contact with the contact pads, a mold on the circuit board, the mold fixing the IC device to the circuit board, and a surface profile modifier on a surface of the IC device and a surface of the mold, and the surface profile modifier enlarging a surface area of the IC device and the mold to dissipate heat.

Abstract: Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.

Abstract: Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.

Abstract: A semiconductor package may include a substrate including a substrate pad on a top surface thereof; at least one semiconductor chip including a connection terminal electrically connected to the substrate on an active surface thereof, and mounted on the substrate; a heat release pattern formed between the substrate and the at least one semiconductor chip and configured to generate heat; and underfill resin underfilled between the substrate and the at least one semiconductor chip and comprising fillers. A semiconductor package may include a substrate including a substrate pad on a top surface thereof and a first heat release pattern configured to generate heat, and a semiconductor chip including a bonding pad formed on an active surface facing the substrate and a second heat release pattern configured to generate heat.

Abstract: A method of predicting a temperature includes operatively coupling a temperature prediction circuit to a device including a semiconductor chip, determining a correlation between a current and voltage of the temperature prediction circuit, and predicting a temperature with respect to power applied to the device using the determined correlation.

Abstract: A semiconductor package may include a substrate including a substrate pad on a top surface thereof; at least one semiconductor chip including a connection terminal electrically connected to the substrate on an active surface thereof, and mounted on the substrate; a heat release pattern formed between the substrate and the at least one semiconductor chip and configured to generate heat; and underfill resin underfilled between the substrate and the at least one semiconductor chip and comprising fillers. A semiconductor package may include a substrate including a substrate pad on a top surface thereof and a first heat release pattern configured to generate heat, and a semiconductor chip including a bonding pad formed on an active surface facing the substrate and a second heat release pattern configured to generate heat.

Abstract: Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.

Abstract: Provided is a micro heat flux sensor array having reduced heat resistance. A micro heat flux sensor array may include a substrate, a plurality of first sensors formed on a first side of the substrate, and a plurality of second sensors formed on a second side of the substrate. Each of the plurality of first and second sensors may include a first wiring pattern layer of a first conductive material, a second wiring pattern layer of a second conductive material contacting the first wiring pattern layer, and an insulating layer in contact with the first and second wiring patterns.

Abstract: A stack package usable in a three-dimensional (3D) system-in-package (SIP) includes a first semiconductor chip, a second semiconductor chip, and a supporter. The first semiconductor chip includes a through silicon via (TSV), and the second semiconductor chip is stacked on the first semiconductor chip and is electrically connected to the first semiconductor chip through the TSV of the first semiconductor chip. The supporter is attached onto the first semiconductor chip so as to be spaced apart from an edge of the second semiconductor chip.

Abstract: Provided is a micro heat flux sensor array having reduced heat resistance. A micro heat flux sensor array may include a substrate, a plurality of first sensors formed on a first side of the substrate, and a plurality of second sensors formed on a second side of the substrate. Each of the plurality of first and second sensors may include a first wiring pattern layer of a first conductive material, a second wiring pattern layer of a second conductive material contacting the first wiring pattern layer, and an insulating layer in contact with the first and second wiring patterns.

Abstract: Provided is a micro heat flux sensor array having reduced heat resistance. A micro heat flux sensor array may include a substrate, a plurality of first sensors formed on a first side of the substrate, and a plurality of second sensors formed on a second side of the substrate. Each of the plurality of first and second sensors may include a first wiring pattern layer of a first conductive material, a second wiring pattern layer of a second conductive material contacting the first wiring pattern layer, and an insulating layer in contact with the first and second wiring patterns.

Abstract: A tape carrier package may include an interposer having a first surface and a second surface. The first surface of the interposer may be attached to an exposed active surface of a semiconductor chip. A heat sink may be attached to the second surface of the interposer.