Abstract: In one example, an electronic device, comprises a substrate, comprising a first dielectric having a top surface and a bottom surface, and a first conductor in the first dielectric and comprising a first via and a first trace over the first via. The first trace comprises a first trace sidewall and a first trace base, and the first via comprises a first via sidewall. The first conductor comprises a first arcuate vertex between the first trace sidewall and the first trace base, and a second arcuate vertex between the first via sidewall and the first trace base, an electronic component over the top surface of the substrate, and an encapsulant over the top surface of the substrate and contacting a lateral side of the electronic component. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device comprises a substrate having a top side and a bottom side, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate. The substrate comprises a dielectric structure comprising a first dielectric layer and a conductive structure in the dielectric structure and comprising a first conductor tier in the first dielectric layer comprising a first trace exposed from a top side of the first dielectric layer and partially extending through the first dielectric layer and a first via exposed from the top side of the first dielectric layer and a bottom side of the first dielectric layer and extending from the top side of the first dielectric layer to the bottom side of the first dielectric layer. The first trace and the first via have non-stepped sidewalls extending vertically. Other examples are also disclosed herein.

Abstract: In one example, an electronic device, comprises a substrate, comprising a first dielectric having a top surface and a bottom surface, and a first conductor in the first dielectric and comprising a first via and a first trace over the first via. The first trace comprises a first trace sidewall and a first trace base, and the first via comprises a first via sidewall. The first conductor comprises a first arcuate vertex between the first trace sidewall and the first trace base, and a second arcuate vertex between the first via sidewall and the first trace base, an electronic component over the top surface of the substrate, and an encapsulant over the top surface of the substrate and contacting a lateral side of the electronic component. Other examples and related methods are also disclosed herein.

Abstract: Disclosed herein is a transfer printing technology. A transfer printing substrate includes a plurality of pillar structures and a sacrificial layer applied thereon. In situ alignment of a transfer layer is performed by the pillar structures and a structural confinement by a concave structure formed on a bottom surface of the transfer layer corresponding to the pillar structures, or a chemical bond of the pillar structure and the transfer layer. In the in situ alignment by the structural confinement, the remaining sacrificial layer after being removed may serve as an adhesive component. The transfer process is performed by a separation of the bond by the sacrificial layer, a cutting of the pillar structures in the chemic bonding state of the pillar structures and the transfer layer, or a separation of the bond between the pillar structures and the handling substrate.

Abstract: Disclosed herein is a transfer printing technology. A transfer printing substrate includes a plurality of pillar structures and a sacrificial layer applied thereon. In situ alignment of a transfer layer is performed by the pillar structures and a structural confinement by a concave structure formed on a bottom surface of the transfer layer corresponding to the pillar structures, or a chemical bond of the pillar structure and the transfer layer. In the in situ alignment by the structural confinement, the remaining sacrificial layer after being removed may serve as an adhesive component. The transfer process is performed by a separation of the bond by the sacrificial layer, a cutting of the pillar structures in the chemic bonding state of the pillar structures and the transfer layer, or a separation of the bond between the pillar structures and the handling substrate.