Patents by Inventor Yun-Lung Ho
Yun-Lung Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11193043Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.Type: GrantFiled: June 11, 2018Date of Patent: December 7, 2021Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., Uwiz Technology Co., Ltd.Inventors: Chia-Jung Hsu, Yun-Lung Ho, Neng-Kuo Chen, Song-Yuan Chang, Teng-Chun Tsai
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Patent number: 10501660Abstract: Provided is a slurry composition including abrasive particles, halogen oxide, and nitroxide compound. The combination of halogen oxide and nitroxide compound has a synergistic effect to remove a substrate containing tungsten and silicon oxide. Moreover, a use of the slurry composition and a polishing method using the slurry composition are provided.Type: GrantFiled: March 11, 2019Date of Patent: December 10, 2019Assignee: UWIZ Technology Co., Ltd.Inventors: Yun-Lung Ho, Chung-Wei Chiang, Song-Yuan Chang, Ming-Hui Lu, Ming-Che Ho
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Publication number: 20190203073Abstract: Provided is a slurry composition including abrasive particles, halogen oxide, and nitroxide compound. The combination of halogen oxide and nitroxide compound has a synergistic effect to remove a substrate containing tungsten and silicon oxide. Moreover, a use of the slurry composition and a polishing method using the slurry composition are provided.Type: ApplicationFiled: March 11, 2019Publication date: July 4, 2019Applicant: UWIZ Technology Co., Ltd.Inventors: Yun-Lung Ho, Chung-Wei Chiang, Song-Yuan Chang, Ming-Hui Lu, Ming-Che Ho
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Publication number: 20180291234Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.Type: ApplicationFiled: June 11, 2018Publication date: October 11, 2018Inventors: Chia-Jung HSU, Yun-Lung HO, Neng-Kuo CHEN, Song-Yuan CHANG, Teng-Chun TSAI
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Patent number: 9994736Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.Type: GrantFiled: December 15, 2016Date of Patent: June 12, 2018Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., UWIZ Technology Co., Ltd.Inventors: Chia-Jung Hsu, Yun-Lung Ho, Neng-Kuo Chen, Song-Yuan Chang, Teng-Chun Tsai
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Patent number: 9881803Abstract: The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium compound regions including germanium interspersed between a plurality of oxide regions including an oxide. A slurry is then provided onto the semiconductor substrate. The slurry has an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide. A CMP process is then performed by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.Type: GrantFiled: July 21, 2016Date of Patent: January 30, 2018Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., UWiZ Technology Co., Ltd.Inventors: Chia-Jung Hsu, Yun-Lung Ho, Neng-Kuo Chen, Wen-Feng Chueh, Sey-Ping Sun, Song-Yuan Chang
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Publication number: 20170253766Abstract: Provided is a slurry composition including abrasive particles, halogen oxide, and nitroxide compound. The combination of halogen oxide and nitroxide compound has a synergistic effect to remove a substrate containing tungsten and silicon oxide. Moreover, a use of the slurry composition and a polishing method using the slurry composition are provided.Type: ApplicationFiled: June 8, 2016Publication date: September 7, 2017Inventors: Yun-Lung Ho, Chung-Wei Chiang, Song-Yuan Chang, Ming-Hui Lu, Ming-Che Ho
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Publication number: 20170098560Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.Type: ApplicationFiled: December 15, 2016Publication date: April 6, 2017Inventors: Chia-Jung HSU, Yun-Lung HO, Neng-Kuo CHEN, Song-Yuan CHANG, Teng-Chun TSAI
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Patent number: 9530655Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.Type: GrantFiled: September 8, 2014Date of Patent: December 27, 2016Assignees: Taiwan Semiconductor Manufacting Company, Ltd., UWIZ Technology Co., Ltd.Inventors: Chia-Jung Hsu, Yun-Lung Ho, Neng-Kuo Chen, Song-Yuan Chang, Teng-Chun Tsai
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Patent number: 9493678Abstract: A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.Type: GrantFiled: January 15, 2015Date of Patent: November 15, 2016Assignee: UWiZ Technology Co., Ltd.Inventors: Yun Lung Ho, Chun Chieh Lee, Song Yuan Chang, Ming Hui Lu, Ming Che Ho
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Publication number: 20160329215Abstract: The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium compound regions including germanium interspersed between a plurality of oxide regions including an oxide. A slurry is then provided onto the semiconductor substrate. The slurry has an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide. A CMP process is then performed by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.Type: ApplicationFiled: July 21, 2016Publication date: November 10, 2016Inventors: Chia-Jung Hsu, Yun-Lung Ho, Neng-Kuo Chen, Wen-Feng Chueh, Sey-Ping Sun, Song-Yuan Chang
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Patent number: 9416297Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor. The oxidant has a compound with one or more oxygen molecules. The etching inhibitor has a nitrogen-oxide compound. The etching inhibitor reduces the rate of metal and dielectric material (e.g., oxide) removal, but does so in a manner that reduces the rate of dielectric material removal by a larger amount, so as to provide the slurry composition with a high metal (e.g., germanium) to dielectric material removal selectivity and with a low rate of metal recess formation.Type: GrantFiled: November 13, 2013Date of Patent: August 16, 2016Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., UWiZ Technology Co., Ltd.Inventors: Chia-Jung Hsu, Yun-Lung Ho, Neng-Kuo Chen, Wen-Feng Chueh, Sey-Ping Sun, Song-Yuan Chang
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Publication number: 20160208141Abstract: A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.Type: ApplicationFiled: January 15, 2015Publication date: July 21, 2016Applicant: UWIZ TECHNOLOGY CO.,LTD.Inventors: Yun Lung Ho, Chun Chieh Lee, Song Yuan Chang, Ming Hui Lu, Ming Che Ho
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Publication number: 20160071737Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.Type: ApplicationFiled: September 8, 2014Publication date: March 10, 2016Inventors: Chia-Jung Hsu, Yun-Lung Ho, Neng-Kuo Chen, Song-Yuan Chang, Teng-Chun Tsai
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Publication number: 20150129795Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor. The oxidant has a compound with one or more oxygen molecules. The etching inhibitor has a nitrogen-oxide compound. The etching inhibitor reduces the rate of metal and dielectric material (e.g., oxide) removal, but does so in a manner that reduces the rate of dielectric material removal by a larger amount, so as to provide the slurry composition with a high metal (e.g., germanium) to dielectric material removal selectivity and with a low rate of metal recess formation.Type: ApplicationFiled: November 13, 2013Publication date: May 14, 2015Inventors: Chia-Jung Hsu, Yun-Lung Ho, Neng-Kuo Chen, Wen-Feng Chueh, Sey-Ping Sun, Song-Yuan Chang
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Patent number: 8747693Abstract: A silica having metal ions absorbed thereon and a fabricating method thereof are provided. The silica having metal ions absorbed thereon is a silica having metal ions absorbed thereon and being modified with persulfate salt. The method includes following steps. A solution is provided, and the solution includes silica and persulfate salt therein. The solution is heated to react the silica with the persulfate salt, so as to obtain silica modified with persulfate salt. Metal ion source is added in the solution, the metal ion source dissociates metal ions, and the silica modified with persulfate salt absorbs the metal ions to obtain the silica having metal ions absorbed thereon.Type: GrantFiled: September 13, 2012Date of Patent: June 10, 2014Assignee: UWIZ Technology Co., Ltd.Inventors: Yun-Lung Ho, Song-Yuan Chang, Ming-Hui Lu, Chung-Wei Chiang
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Publication number: 20130068995Abstract: A silica having metal ions absorbed thereon and a fabricating method thereof are provided. The silica having metal ions absorbed thereon is a silica having metal ions absorbed thereon and being modified with persulfate salt. The method includes following steps. A solution is provided, and the solution includes silica and persulfate salt therein. The solution is heated to react the silica with the persulfate salt, so as to obtain silica modified with persulfate salt. Metal ion source is added in the solution, the metal ion source dissociates metal ions, and the silica modified with persulfate salt absorbs the metal ions to obtain the silica having metal ions absorbed thereon.Type: ApplicationFiled: September 13, 2012Publication date: March 21, 2013Applicant: UWIZ TECHNOLOGY CO., LTD.Inventors: Yun-Lung Ho, Song-Yuan Chang, Ming-Hui Lu, Chung-Wei Chiang