Abstract: A delay locked loop circuit includes a delay line, a phase detector, a selection controller, and a charge pump. The delay line delays, based on a delay control voltage, a reference clock signal to generate an internal clock signal and a feedback clock signal. The phase detector compares phases of the internal clock signal and the feedback clock signal to generate a first detection signal and a second detection signal. The selection controller provides the reference clock signal as an up-signal and a down-signal. The charge pump generates the delay control voltage based on the up-signal and the down-signal.

Abstract: A semiconductor apparatus includes an internal clock generating circuit, a stop controlling circuit, and a data clock generating circuit. The internal clock generating circuit generates, based on a reference clock signal, a plurality of internal clock signals. The stop controlling circuit generates a stop signal and a clock level signal based on the reference clock signal and the plurality of internal clock signals. The data clock generating circuit generates a data clock signal and a complementary data clock signal based on the plurality of internal clock signals, the stop signal, and the clock level signal.

Abstract: A delay locked loop circuit includes a delay line, a phase detector, a selection controller, and a charge pump. The delay line delays, based on a delay control voltage, a reference clock signal to generate an internal clock signal and a feedback clock signal. The phase detector compares phases of the internal clock signal and the feedback clock signal to generate a first detection signal and a second detection signal. The selection controller provides the reference clock signal as an up-signal and a down-signal. The charge pump generates the delay control voltage based on the up-signal and the down-signal.

Abstract: A delay locked loop circuit includes a delay line, a phase detector, a selection controller, and a charge pump. The delay line delays, based on a delay control voltage, a reference clock signal to generate an internal clock signal and a feedback clock signal. The phase detector compares phases of the internal clock signal and the feedback clock signal to generate a first detection signal and a second detection signal. The selection controller provides the reference clock signal as an up-signal and a down-signal. The charge pump generates the delay control voltage based on the up-signal and the down-signal.

Abstract: A semiconductor apparatus includes an internal dock generating circuit, a stop controlling circuit, and a data dock generating circuit. The internal clock generating circuit generates, based on a reference clock signal, a plurality of internal clock signals. The stop controlling circuit generates a stop signal and a dock level signal based on the reference clock signal and the plurality of internal clock signals. The data clock generating circuit generates a data clock signal and a complementary data clock signal based on the plurality of internal clock signals, the stop signal, and the clock level signal.

Abstract: A delay locked loop circuit includes a delay line, a phase detector, a selection controller, and a charge pump. The delay line delays, based on a delay control voltage, a reference clock signal to generate an internal clock signal and a feedback clock signal. The phase detector compares phases of the internal clock signal and the feedback clock signal to generate a first detection signal and a second detection signal. The selection controller provides the reference clock signal as an up-signal and a down-signal. The charge pump generates the delay control voltage based on the up-signal and the down-signal.

Abstract: A delay locked loop circuit includes a first delay locked loop and a second delay locked loop having different characteristics. The first delay locked loop performs a delay-locking operation on a reference clock signal to generate a delay locked clock signal. The second delay locked loop performs a delay-locking operation on the delay locked clock signal to generate an internal clock signal.

Abstract: A semiconductor apparatus includes an internal dock generating circuit, a stop controlling circuit, and a data dock generating circuit. The internal clock generating circuit generates, based on a reference clock signal, a plurality of internal clock signals. The stop controlling circuit generates a stop signal and a dock level signal based on the reference clock signal and the plurality of internal clock signals. The data clock generating circuit generates a data clock signal and a complementary data clock signal based on the plurality of internal clock signals, the stop signal, and the clock level signal.

Abstract: A delay line includes first to n-th delay cells and a dummy delay cell, ‘n’ being an integer greater than or equal to 3. The first to n-th delay cells sequentially delay an input signal to respectively generate first to n-th output signals. The dummy delay cell delays the n-th output signal based on a delay control voltage to generate a dummy output signal. A delay amount of each of the first to (n?1)-th delay cells is adjusted on a basis of the delay control voltage and the output signal of the delay cell of a next stage of the corresponding delay cell, and a delay amount of the n-th delay cell is adjusted on a basis of the delay control voltage and the dummy output signal.

Abstract: A delay locked loop circuit includes a first delay locked loop and a second delay locked loop having different characteristics. The first delay locked loop performs a delay-locking operation on a reference clock signal to generate a delay locked clock signal. The second delay locked loop performs a delay-locking operation on the delay locked clock signal to generate an internal clock signal.

Abstract: A delay locked loop circuit includes a first delay locked loop and a second delay locked loop having different characteristics. The first delay locked loop performs a delay-locking operation on a reference clock signal to generate a delay locked clock signal. The second delay locked loop performs a delay-locking operation on the delay locked clock signal to generate an internal clock signal.

Abstract: A delay locked loop circuit includes a first delay locked loop and a second delay locked loop having different characteristics. The first delay locked loop performs a delay-locking operation on a reference clock signal to generate a delay locked clock signal. The second delay locked loop performs a delay-locking operation on the delay locked clock signal to generate an internal clock signal.

Abstract: A delay locked loop circuit includes a first delay locked loop and a second delay locked loop having different characteristics. The first delay locked loop performs a delay-locking operation on a reference clock signal to generate a delay locked clock signal. The second delay locked loop performs a delay-locking operation on the delay locked clock signal to generate an internal clock signal.

Abstract: A delay locked loop circuit includes a delay line, a phase detector, a selection controller, and a charge pump. The delay line delays, based on a delay control voltage, a reference clock signal to generate an internal clock signal and a feedback clock signal. The phase detector compares phases of the internal clock signal and the feedback clock signal to generate a first detection signal and a second detection signal. The selection controller provides the reference clock signal as an up-signal and a down-signal. The charge pump generates the delay control voltage based on the up-signal and the down-signal.

Abstract: A memory system includes a representative memory device directly outputting a representative data strobe signal, at least one non-representative memory device outputting a non-representative data strobe signal through the representative memory device, and a controller generating an internal delay clock signal synchronized with the representative data strobe signal. The controller outputs a test mode code defining a delay time using the internal delay clock signal as a reference signal. The at least one non-representative memory device adjusts a phase of the non-representative data strobe signal such that the non-representative data strobe signal has a delay time corresponding to the test mode code.

Abstract: A delay line includes first to n-th delay cells and a dummy delay cell, ‘n’ being an integer greater than or equal to 3. The first to n-th delay cells sequentially delay an input signal to respectively generate first to n-th output signals. The dummy delay cell delays the n-th output signal based on a delay control voltage to generate a dummy output signal. A delay amount of each of the first to (n?1)-th delay cells is adjusted on a basis of the delay control voltage and the output signal of the delay cell of a next stage of the corresponding delay cell, and a delay amount of the n-th delay cell is adjusted on a basis of the delay control voltage and the dummy output signal.

Abstract: A delay line includes first to n-th delay cells and a dummy delay cell, ‘n’ being an integer greater than or equal to 3. The first to n-th delay cells sequentially delay an input signal to respectively generate first to nth output signals. The dummy delay cell delays the n-th output signal based on a delay control voltage to generate a dummy output signal. A delay amount of each of the first to (n?1)-th delay cells is adjusted on a basis of the delay control voltage and the output signal of the delay cell of a next stage of the corresponding to delay cell, and a delay amount of the nth delay cell is adjusted on a basis of the delay control voltage and the dummy output signal.

Abstract: A delay line includes a first delay cell and a second delay cell. The first delay cell inverts an input signal to generate a first output signal. The second delay cell inverts the first output signal to generate a second output signal. The driving forces of the first delay cell is adjusted on the basis of a delay control voltage and the second output signal.

Abstract: A delay locked loop circuit includes a first delay locked loop and a second delay locked loop having different characteristics. The first delay locked loop performs a delay-locking operation on a reference clock signal to generate a delay locked clock signal. The second delay locked loop performs a delay-locking operation on the delay locked clock signal to generate an internal clock signal.

Abstract: A memory system includes a representative memory device directly outputting a representative data strobe signal, at least one non-representative memory device outputting a non-representative data strobe signal through the representative memory device, and a controller generating an internal delay clock signal synchronized with the representative data strobe signal. The controller outputs a test mode code defining a delay time using the internal delay clock signal as a reference signal. The at least one non-representative memory device adjusts a phase of the non-representative data strobe signal such that the non-representative data strobe signal has a delay time corresponding to the test mode code.