Abstract: A semiconductor processing apparatus includes a process chamber, a gas intake device, a base, and a flow guide structure. The process chamber includes a process area and a transfer area arranged from top to bottom, the gas intake device is disposed at a top of the process chamber for introducing a process gas into the process area. The base is vertically movable and is disposed in the transfer area for carrying a wafer. The flow guide structure is connected to a gas supply source, and fixedly attached to the base; and when the base is located at a process position, the flow guide structure is configured to blow a gas outward to an outer peripheral surface. An exhaust structure is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure when the base is located at the process position.

Abstract: Disclosed are compounds having the formula: (I) wherein q, r, s, A, B, C, RA1, RA2, RB1, RB2, RC1, RC2, R3, R4, R5, R6, R14, R15, R16, R17, Rx, and Ry are as defined herein, or a tautomer thereof, or a salt, particularly a pharmaceutically acceptable salt, thereof.

Abstract: Disclosed are compounds having the formula: (I) wherein q, r, s, A, B, C, RA1, RA2, RB1, RB2, RC1, RC2, R3, R4, R5, R6, R14, R15, R16, R17, Rx, and Ry are as defined herein, or a tautomer thereof, or a salt, particularly a pharmaceutically acceptable salt, thereof.