Abstract: In some embodiments, the present disclosure relates to a display device that includes a first reflector electrode and a second reflector electrode that is separated from the first reflector electrode. The display device further includes an isolation structure that overlies the first and second reflector electrodes. The isolation structure includes a first and second portion. The first portion overlies the first reflector electrode and has a first thickness. The second portion overlies the second reflector electrode, has a second thickness greater than the first thickness, and is separated from the first portion of the isolation structure. The display device also includes a first optical emitter structure and a second optical emitter structure that respectively overlie the first portion and the second portion of the isolation structure.

Abstract: A probe cover for an ear thermometer and a grouping method of the same are provided. The probe cover for the ear thermometer includes a conical main body having a closed end and an open end, an annular elastomer, and a flange. The closed end is penetrable by infrared rays, and has different infrared transmittances according to thickness variations of the closed end. The annular elastomer is located between the conical main body and the flange. The flange has a plurality of detection positions, each of which having a positive detection pattern or a negative detection pattern, such that the detection positions are arranged to form a plurality of different detection combinations. The different detection combinations respectively correspond to the different infrared transmittances, and any two of the different detection combinations have the two corresponding infrared transmittances that are different from one another.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a plurality of conductive contacts overlying a semiconductor substrate. A plurality of first conductive wires is disposed on the plurality of conductive contacts. A plurality of conductive vias overlies the first conductive wires. An etch stop structure is disposed on the first conductive wires. The plurality of conductive vias extend through the etch stop structure. The etch stop structure includes a first etch stop layer, a first insulator layer, and a second etch stop layer. The first insulator layer is disposed between the first etch stop layer and the second etch stop layer.

Abstract: Depositing gallium nitride and carbon (GaN:C) (e.g., in the form of composite layers) when forming a gallium nitride drain of a transistor provides a buffer between the gallium nitride of the drain and silicon of a substrate in which the drain is formed. As a result, gaps and other defects caused by lattice mismatch are reduced, which improves electrical performance of the drain. Additionally, current leakage into the substrate is reduced, which further improves electrical performance of the drain. Additionally, or alternatively, implanting silicon in an aluminum nitride (AlN) liner for a gallium nitride drain reduces contact resistance at an interface between the gallium nitride and the silicon. As a result, electrical performance of the transistor is improved.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.

Abstract: Controlling power consumption at an IHS, including receiving electrical power associated with an initial voltage at a first time; determining that the IHS is to enter a low-power state, and in response: adjusting an UVP parameter for the electrical power from a first voltage to a second voltage, the second voltage less than the first voltage, the second voltage based on the low-power state; adjusting an OCP parameter for the electrical power from a first amperage to a second amperage, the second amperage less than the first amperage, the second amperage based on the low-power state; trimming the initial voltage of the electrical power to a trimmed voltage, the trimmed voltage less the initial voltage and greater than the second voltage; adjusting the power state of the IHS to the low-power state; receiving the electrical power having the trimmed voltage at a second time after the first time.

Abstract: Controlling power consumption at an IHS, including receiving electrical power associated with an initial voltage at a first time; determining that the IHS is to enter a low-power state, and in response: adjusting an UVP parameter for the electrical power from a first voltage to a second voltage, the second voltage less than the first voltage, the second voltage based on the low-power state; adjusting an OCP parameter for the electrical power from a first amperage to a second amperage, the second amperage less than the first amperage, the second amperage based on the low-power state; trimming the initial voltage of the electrical power to a trimmed voltage, the trimmed voltage less the initial voltage and greater than the second voltage; adjusting the power state of the IHS to the low-power state; receiving the electrical power having the trimmed voltage at a second time after the first time.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including an optical device disposed on a substrate. A dielectric structure overlies the substrate. The dielectric structure comprises one or more sidewalls defining a light channel over a region of the optical device. A protective structure is above the optical device and disposed on opposing sides of the light channel.

Abstract: A temperature calibration method for an ear thermometer with a probe cover is provided. The temperature calibration method includes: providing the ear thermometer with the probe cover, the ear thermometer including a plurality of activation elements which are configured to sense an infrared transmittance of the probe cover to obtain a measured transmittance value; using the ear thermometer to measure an object to be tested to obtain an uncalibrated temperature; obtaining an infrared radiation energy emitted by the object to be tested, according to the uncalibrated temperature, the measured transmittance value, a preset transmittance value, and a radiation energy measurement formula; and calibrating the uncalibrated temperature to a calibrated temperature, according to a temperature calibration function.

Abstract: A method for increasing power supply voltage in an information handling system in a normal mode with a first peak voltage comprises, in response to receiving a request for a higher peak voltage, an embedded controller (EC) receiving information associated with the application including a request for power at a higher peak voltage, a housekeeping IC communicating a signal to a PWM IC to increase voltage supplied to the information handling system to the higher peak voltage, the PWM IC converting from the PSU to the higher peak voltage and starting a timer with a defined time period. If no additional requests for operating at the higher peak voltage are received before the time period expires, the PWM IC communicates a signal that power will stop being supplied at the higher peak voltage, and the information handling system returns to operating in the normal mode at the first peak voltage.

Abstract: The present disclosure relates to an image sensor integrated chip. The image sensor integrated chip includes a photodiode region disposed within a substrate having a first semiconductor material region. A second semiconductor material region is disposed onto the substrate. A patterned doped layer is arranged between the substrate and the second semiconductor material region. The second semiconductor material region includes a sidewall connecting to a bottom surface of the second semiconductor material region. The sidewall extends through the patterned doped layer. A bottom surface of the second semiconductor material region is directly over the photodiode region.

Abstract: A food temperature measuring device includes a device main body, a signal control module, a temperature measuring module, a light emitting display module, and an information display module. The temperature measuring module is configured for measuring a predetermined food so as to obtain measured temperature information of the predetermined food. The light emitting display module includes a first light emitting unit for providing a first food light message, a second light emitting unit for providing a second food light message, and a third light emitting unit for providing a third food light message. The information display module is configured for displaying a measured temperature value of the measured temperature information obtained by the temperature measuring module. Therefore, the light emitting display module can be configured for providing food category corresponding information corresponding to the predetermined food according to the first, the second, and the third food light message.

Abstract: In some embodiments, the present disclosure relates to a display device. The display device includes an isolation structure disposed over a reflector electrode, an additional electrode disposed over the isolation structure, and an optical emitter structure disposed over the additional electrode. A via structure includes a lower horizontal segment disposed on the reflector electrode, a vertical segment extending along a sidewall of the isolation structure, and an upper horizontal segment disposed over the isolation structure. The upper horizontal segment is connected to the lower horizontal segment by the vertical segment.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip the method includes forming a waveguide on a first surface of a substrate. A conductive structure is formed at least partially overlying the waveguide. A light pipe structure is formed over the waveguide. A lower surface of the light pipe structure is disposed between a top surface and a bottom surface of the conductive structure. A lower portion of the light pipe structure contacts the conductive structure.

Abstract: A method for increasing power supply voltage in an information handling system in a normal mode with a first peak voltage comprises, in response to receiving a request for a higher peak voltage, an embedded controller (EC) receiving information associated with the application including a request for power at a higher peak voltage, a housekeeping IC communicating a signal to a PWM IC to increase voltage supplied to the information handling system to the higher peak voltage, the PWM IC converting from the PSU to the higher peak voltage and starting a timer with a defined time period. If no additional requests for operating at the higher peak voltage are received before the time period expires, the PWM IC communicates a signal that power will stop being supplied at the higher peak voltage, and the information handling system returns to operating in the normal mode at the first peak voltage.

Abstract: A temperature measuring device includes a device main body, a signal control module, a movable shutter module, and a first and a second non-contacting temperature sensing module. The movable shutter module includes an electric control driver, a movable shutter structure, and an electric control heater, and the movable shutter structure includes a black substance for generating a predetermined heating temperature from being heated by the electric control heater. The first non-contacting temperature sensing module is configured for measuring an object temperature of an object so as to obtain object temperature information of the object. The second non-contacting temperature sensing module is configured for measuring the predetermined heating temperature generated by the black substance of the movable shutter structure so as to obtain black body temperature information of the black substance.

Abstract: In some embodiments, the present disclosure relates to a method that includes forming an isolation structure over a reflector electrode and forming a protective layer over the isolation structure. Further, a first removal process is performed to form a first opening in the protective layer and the isolation structure to expose a first surface of the reflector electrode. A cleaning process is performed to clean the first surface of the reflector electrode. A conductive layer is formed over the protective layer and within the first opening. The conductive layer includes a different material than the protective layer. A second removal process is performed to remove peripheral portions of the protective layer and the conductive layer to form a via structure within the opening, extending through the isolation structure to contact the reflector electrode, and including the protective layer and the conductive layer.

Abstract: A temperature measuring device and a temperature measuring method for providing light spot marks of different colors are provided. The temperature measuring device includes a temperature measuring main body, a signal-providing module, a temperature-sensing module, and a first and a second color projection module. The signal-providing module and the temperature-sensing module are disposed on the temperature measuring main body. The temperature-sensing module is configured for measuring a temperature of a target area of an object. The first color projection module is disposed on the temperature measuring main body, and configured for projecting a first color light beam onto the target area of the object by control of the signal-providing module. The second color projection module is disposed on the temperature measuring main body, and configured for projecting a second color light beam onto the target area of the object by control of the signal-providing module.

Abstract: A temperature calibration method includes providing a temperature measuring device including a movable shutter module, and a first and a second non-contacting temperature sensing module, and a movable shutter structure of the movable shutter module includes a black substance for generating a predetermined heating temperature; moving the movable shutter structure to a first position by driving of the electric control driver, so as to completely block a first temperature-measuring viewing angle of the first non-contacting temperature sensing module and a second temperature-measuring viewing angle of the second non-contacting temperature sensing module by the black substance; measuring the predetermined heating temperature that is generated by the black substance by the second non-contacting temperature sensing module at the second temperature-measuring viewing angle so as to obtain black body temperature information of the black substance; and calibrating the first non-contacting temperature sensing module acco