Abstract: A multi-band antenna has a base plate which defines a slot longitudinally extending and penetrating through one edge of the base plate to divide the base plate into a feeding portion and a grounding portion. A first radiating portion extends substantially perpendicularly from the feeding portion. A second radiating portion includes a connecting section substantially perpendicularly extending from the first radiating portion and substantially parallel and adjacent to the base plate and a radiating part connected with the connecting section and opposite to the base plate. The radiating part has a first radiating strip, a second radiating strip, a third radiating strip and an extended radiating strip, all of which shows a substantial stair-shape in combination.

Abstract: A method for forming a high-voltage drain metal-oxide-semiconductor (HVD-MOS) device includes providing a semiconductor substrate; forming a well region of a first conductivity type; and forming an embedded well region in the semiconductor substrate and only on a drain side of the HVD-MOS device, wherein the embedded region is of a second conductivity type opposite the first conductivity type. The step of forming the embedded well region includes simultaneously doping the embedded well region and a well region of a core regular MOS device, and simultaneously doping the embedded well region and a well region of an I/O regular MOS device, wherein the core and I/O regular MOS devices are of the first conductivity type. The method further includes forming a gate stack extending from over the embedded well region to over the well region.

Abstract: A dual-band antenna has a feeding conductor with a feeding point and a connecting portion extending downwardly from the feeding conductor. A first radiating conductor and a loop protrusion respectively extend outward from two opposite sides of the connecting portion. A grounding portion faces the loop protrusion and is spaced apart from the feeding conductor to form a small gap therebetween. A loop connection is disposed away from the feeding conductor and connects an upper portion of the loop protrusion and an upper portion of the grounding portion.

Abstract: A method for generating candidate used in TCOFDM (turbo coded orthogonal frequency-division multiplexing) with SLM (selective mapping) technique, a user data is combined with a plurality of seeds to generate corresponding a plurality of message vectors. The method is characterized in performing tail-biting turbo encoding on the message vectors to generate corresponding turbo codewords used for generating candidates, and the seed of each message vector is different from the seeds of other message vectors.

Abstract: A method for forming a high-voltage drain metal-oxide-semiconductor (HVD-MOS) device includes providing a semiconductor substrate; forming a well region of a first conductivity type; and forming an embedded well region in the semiconductor substrate and only on a drain side of the HVD-MOS device, wherein the embedded region is of a second conductivity type opposite the first conductivity type. The step of forming the embedded well region includes simultaneously doping the embedded well region and a well region of a core regular MOS device, and simultaneously doping the embedded well region and a well region of an I/O regular MOS device, wherein the core and I/O regular MOS devices are of the first conductivity type. The method further includes forming a gate stack extending from over the embedded well region to over the well region.

Abstract: A reverse-extension MOS (REMOS) device and a method for forming the same are provided. The REMOS device includes a gate dielectric over a semiconductor substrate, a gate electrode on the gate dielectric, a lightly doped drain/source (LDD) region in the semiconductor substrate and having a portion extending under the gate electrode, a deep source/drain region in the semiconductor substrate, and an embedded region enclosed by a top surface of the semiconductor substrate, the LDD region, and the deep source/drain region. The embedded region is of a first conductivity type, and the LDD region and the deep source/drain region are of a second conductivity type opposite the first conductivity type. The embedded region and the LDD region are preferably formed simultaneously with the formation of a LDD region and a pocket region of an additional MOS device, respectively.