Patents by Inventor Yung-Chih Yao

Yung-Chih Yao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preventing contamination in a plasma process chamber
    Patent number: 6482331
    Abstract: A method for preventing contamination in a plasma process chamber when the primary heating means for the chamber is turned off is provided. In the method, a heated gas is flown over the top chamber lid of the plasma process chamber. A suitable heated gas can be nitrogen gas that is heated to a temperature between about 100° C. and about 150° C.
    Type: Grant
    Filed: April 18, 2001
    Date of Patent: November 19, 2002
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuo-Liang Lu, Yung-Chih Yao
  • METHOD FOR PREVENTING CONTAMINATION IN A PLASMA PROCESS CHAMBER
    Publication number: 20020153350
    Abstract: A method and an apparatus for preventing contamination in a plasma process chamber when the primary heating means for the chamber is turned off is provided. In the method, a heated gas is flown over the top chamber lid of the plasma process chamber. A suitable heated gas can be nitrogen gas that is heated to a temperature between about 100° C and about 150° C. The present invention is further directed to an apparatus of a plasma process chamber that is equipped with a primary heating means and an auxiliary heating means. The auxiliary heating means is turned on as soon as the primary heating means is turned off such that a heated gas is flown onto the top chamber lid, thus preventing contaminating particles from falling off the chamber wall and preventing contamination of a wafer situated inside the chamber.
    Type: Application
    Filed: April 18, 2001
    Publication date: October 24, 2002
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuo-Liang Lu, Yung-Chih Yao