Abstract: A circuit stack structure is provided. The circuit stack structure includes a conductor layer having metal wires arranged at intervals, propping portions respectively disposed in a gap between any two of the neighboring metal wires, and a protective layer covering the metal wires and the propping portions. The propping portions are electrically isolated with the metal wires. With supporting by the propping portions, all regions of a top surface of the protective layer corresponding to one of the propping portions are coplanar with all regions of the top surface of the protective layer corresponding to each of the metal wires.

Abstract: A system and method for operating an amplifier system is provided. The amplifier system includes an input providing a direct coupling configured to receive a high-frequency input signal having a frequency in at least one of a radiofrequency (RF) and microwave range. The amplifier system also includes an amplifier including a dielectric material separating at least two superconducting layers forming an amplifier loop configured to receive the high-frequency input signal and deliver an amplified signal. The amplifier system includes an output providing a direct coupling configured to deliver the amplified signal.

Abstract: A circuit stack structure is provided. The circuit stack structure includes a conductor layer having metal wires arranged at intervals, propping portions respectively disposed in a gap between any two of the neighboring metal wires, and a protective layer covering the metal wires and the propping portions. The propping portions are electrically isolated with the metal wires. With supporting by the propping portions, all regions of a top surface of the protective layer corresponding to one of the propping portions are coplanar with all regions of the top surface of the protective layer corresponding to each of the metal wires.

Abstract: An array substrate, liquid crystal display for the same and manufacturing method thereof are described. The array substrate includes a substrate, a plurality of scan lines, a plurality of data lines, a plurality of contact pads, a passivation layer and transparent conducting layer. The substrate has a first display region, a second display region and a first non-display region. The contact pads are disposed in the first non-display region. The transparent conducting layer disposed in the passivation layer includes a first pixel electrode, a second pixel electrode and a plurality of comb electrode. The first pixel electrode and second pixel electrode are disposed in the first display region and the second display region wherein the widths of the first pixel electrodes either are equal to or approximate the widths of the second pixel electrodes. The comb electrodes are disposed in the first non-display region and connected to the contact pads.

Abstract: A fixing mechanism for fixing a display device includes a display casing whereon a hole is formed, a shielding wall connected to a side of the display casing, and a bracket wedged inside the shielding wall in a detachable manner and installed on the side of the display casing. An opening is formed on the bracket. The fixing mechanism further includes a screwing component. An end of the screwing component passes through the hole on the display casing and is screwed inside the opening on the bracket. The other end of the screwing component is installed inside a wall mount. The shielding wall is for shielding the end of the screwing component.

Abstract: An array substrate, liquid crystal display for the same and manufacturing method thereof are described. The array substrate includes a substrate, a plurality of scan lines, a plurality of data lines, a plurality of contact pads, a passivation layer and transparent conducting layer. The substrate has a first display region, a second display region and a first non-display region. The contact pads are disposed in the first non-display region. The transparent conducting layer disposed in the passivation layer includes a first pixel electrode, a second pixel electrode and a plurality of comb electrode. The first pixel electrode and second pixel electrode are disposed in the first display region and the second display region wherein the widths of the first pixel electrodes either are equal to or approximate the widths of the second pixel electrodes. The comb electrodes are disposed in the first non-display region and connected to the contact pads.

Abstract: A system and method for operating an amplifier system is provided. The amplifier system includes an input providing a direct coupling configured to receive a high-frequency input signal having a frequency in at least one of a radiofrequency (RF) and microwave range. The amplifier system also includes an amplifier including a dielectric material separating at least two superconducting layers forming an amplifier loop configured to receive the high-frequency input signal and deliver an amplified signal. The amplifier system includes an output providing a direct coupling configured to deliver the amplified signal.

Abstract: An LED controller application specific integrated circuit includes a host interface and a PWM module. The PWM module is configured to control a plurality of LED devices, and comprises a PWM data buffer, an arithmetic core and a plurality of PWM channels. The PWM data buffer is configured to store PWM turning-point data from the host. The arithmetic core is configured to generate PWM data according to the PWM turning-point data stored in the PWM data buffer. The plurality of PWM channels are configured to receive the PWM data, and each comprises a PWM controller and a PWM I/O interface. The PWM controller is configured to control the operation of the PWM channel. The PWM I/O interface is configured to connect to an LED device.

Abstract: A fixing mechanism for fixing a display device includes a display casing whereon a hole is formed, a shielding wall connected to a side of the display casing, and a bracket wedged inside the shielding wall in a detachable manner and installed on the side of the display casing. An opening is formed on the bracket. The fixing mechanism further includes a screwing component. An end of the screwing component passes through the hole on the display casing and is screwed inside the opening on the bracket. The other end of the screwing component is installed inside a wall mount. The shielding wall is for shielding the end of the screwing component.

Abstract: A semiconductor saturable absorber and the fabrication method thereof are provided. The semiconductor saturable absorber includes a Fe-doped InP substrate, a periodic unit comprising an AlGaInAs QW formed on the Fe-doped InP substrate and an InAlAs barrier layer formed on one side of the AlGaInAs QW, and another InAlAs barrier layer formed on the other side of the AlGaInAs QW. Each of the InAlAs barrier layers has a width being a half-wavelength of a light emitted by the AlGaInAs QW.

Abstract: A semiconductor saturable absorber and the fabrication method thereof are provided. The semiconductor saturable absorber includes a Fe-doped InP substrate, a periodic unit comprising an AlGaInAs QW formed on the Fe-doped InP substrate and an InAlAs barrier layer formed on one side of the AlGaInAs QW, and another InAlAs barrier layer formed on the other side of the AlGaInAs QW. Each of the InAlAs barrier layers has a width being a half-wavelength of a light emitted by the AlGaInAs QW.

Abstract: A redundant array of independent disks (RAID) system is provided, comprising a nonvolatile memory card array and a RAID controller. Wherein, the non-volatile memory card array consists of at least a non-volatile memory card. The invention has several advantages such as capability to expand storage capacity according to users' needs, shake-proof, abrasion-proof and great adaptability for environment.

Abstract: At least one set of power transmission cable is electrically coupled to a power supply and an electronic device powered by the power supply. The power transmission cable comprises: a connector comprising a first connect part, a second connect part, and a third connect part vertical to the first connect part and utilized to insertedly joint to the electronic device; and an electrically-conductive line, which is electrically coupled to the second connect part and has an electric plug, wherein the first connect part is electrically coupled to the power supply or separably and electrically coupled to the electric plug of the precedent electrically-conductive line to enable the user to determine the length and quantity of the power transmission cable to be connected according to the quantity of the electronic devices so that the problems resulting from the inseparable redundant cable in the conventional power transmission cable can be avoided.

Abstract: A method for improving a performance of a sputtering target in a magnetron sputtering system having at least one magnet repetitively and retracingly scanning between two sides thereof and receiving a power input changing with a scanning position of the magnet is provided. The method includes the steps of stepwise reducing the power input while the magnet approaches a specific distance range near a retracing point, so as to reduce an erosion rate of the sputtering target by the magnetron sputtering system, and increasing the power input to a specific value while the magnet leaves the specific distance range, wherein the power input changes with the scanning position of the magnet, so as to improve the performance of the sputtering target.

Abstract: A method for improving a performance of a sputtering target in a magnetron sputtering system having at least one magnet repetitively and retracingly scanning between two sides thereof and receiving a power input changing with a scanning position of the magnet is provided. The method includes the steps of stepwise reducing the power input while the magnet approaches a specific distance range near a retracing point, so as to reduce an erosion rate of the sputtering target by the magnetron sputtering system, and increasing the power input to a specific value while the magnet leaves the specific distance range, wherein the power input changes with the scanning position of the magnet, so as to improve the performance of the sputtering target.

Abstract: A high-efficiency cavity doubling laser according to the invention contains a laser diode, a laser crystal and a non-linear crystal, is characterized in having a first gap between the laser diode and the laser crystal and a second gap between the laser crystal and the non-linear crystal. Therefore, heat created by the laser crystal can be dissipated by the air gaps and cannot be directly conducted to the laser diode and the non-linear crystal. Furthermore, the thermal distortion of the laser crystal can be compensated by adjusting the position of the non-linear crystal, thereby increasing the efficiency of the laser.

Abstract: A butt-coupling pumped single-mode solid-state laser is provided for generating a laser of single-transverse and single-longitudinal mode. The butt-coupling pumped single-mode solid-state laser includes: (1) a laser diode having an output facet for producing a pumping light; (2) a laser crystal immediately connected to the output facet of the laser diode with a specific length therebetween for generating an excited light at a fundamental wavelength in response to the pumping light; and (3) a mirror disposed away from the laser crystal with a specific distance for emanating a laser output.

Abstract: The present invention includes two photodiodes in parallel connected to some transistors and an adjustable current source. The photocurrent difference from the two photodiodes combines with the current form the current source to be a positive value. This current then charges a capacitor. An automatic comparator circuit detects voltage of the charging capacitor. The Q output of the RS flip-flop is low and the transistor is off to charge the capacitor if the voltage of the capacitor is below a preset value. The buffer output is at low voltage in this case; The Q output of the RS flip-flop is high and the transistor is on to force discharging of the capacitor and the buffer output is at high level when the capacitor voltage reaches a preset value. By repeating these conditions, frequency modulated output can be obtained. The frequency value is related to the two light intensities difference and the current source combined current. When light intensity varies, the frequency varies accordingly.