Abstract: A radial-leaded over-current protection device comprises a PTC element, a first electrode lead, a second electrode lead and an electrically insulating encapsulation layer. The PTC element comprises a first conductive layer, a second conductive layer and a PTC material layer laminated therebetween. The PTC material layer comprises crystalline polymer and conductive filler dispersed therein. The first electrode lead has an end connecting to the first conductive layer, whereas the second electrode lead has an end connecting to the second conductive layer. The electrically insulating encapsulation layer includes a fluorine-containing polymer, and wraps around an entire outer surface of the PTC element and the ends of the first and second electrodes connecting to the PTC element. The electrically insulating encapsulation layer has a thickness of 102˜105 nm, and the radial-leaded over-current protection device has an initial resistance Rbf of 0.0017˜0.0027?.

Abstract: An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer matrix and carbon black. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. The carbon black is dispersed in the polymer matrix. A resistance jump Rjump_1000@16V/50A of the over-current protection device at 16V/50 A by 1000 cycles is 0.80-1.20. A resistance jump R1000@16V/50A of the over-current protection device at 25V/50 A by 1000 cycles is 0.90-1.30.

Abstract: An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer matrix, a conductive ceramic filler, a carbon- containing conductive filler, and an inner filler. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. The inner filler is selected from one of aluminum nitride, silicon carbide, zirconium oxide, boron nitride, graphene, aluminum oxide, or any mixtures thereof, and comprises 2-10% by volume of the PTC material layer. The over-current protection device is able to mitigate negative temperature coefficient (NTC) behavior after trip of device, and achieves high hold current and high endurable power.

Abstract: A cable comprises a power conductor, a data conductor and a first PTC device. The power conductor is configured to transmit electrical power between a source and a sink. The data conductor is configured to transmit data between the source and the sink. The first PTC device is coupled to the data conductor and its resistance increases drastically to decrease current flowing through the data conductor if a temperature of the first PTC device exceeds a first trip temperature. The first trip temperature is 55-80° C. The resistance of the PTC device is larger than 20 k? at 85° C. and larger than 80 k? at 100° C. A current flowing through the data conductor does not exceed 20 mA.

Abstract: An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer, an electrically conductive filler and a metal compound filler. The PTC material layer comprises the polymer of 50-70% by volume, and the electrically conductive filler and the metal compound filler are distributed in the polymer. The metal compound filler has a particle size D50 of 2-15 ?m and 5-20% by volume and is selected from the group consisting of aluminum nitride, aluminum hydroxide, aluminum oxide, titanium oxide and zirconium oxide. The over-current protection device has a resistivity of 0.7-1.2 ?·cm.

Abstract: A cable comprises a power conductor, a data conductor and a first PTC device. The power conductor is configured to transmit electrical power between a source and a sink. The data conductor is configured to transmit data between the source and the sink. The first PTC device is coupled to the data conductor and its resistance increases drastically to decrease current flowing through the data conductor if a temperature of the first PTC device exceeds a first trip temperature. The first trip temperature is 55-80° C. The resistance of the PTC device is larger than 20k? at 85° C. and larger than 80k? at 100° C. A current flowing through the data conductor does not exceed 20 mA.

Abstract: A surface mountable over-current protection device comprises a PTC material layer, first and second conductive layers, left and right electrodes, left and right conductive members, and left and right insulating members. The PTC material layer comprises a left notch at a left end and a right notch at a right end. The first conductive layer comprises a primary portion disposed on an upper surface of the PTC material layer and a secondary portion extending over the left notch, and the second conductive layer comprises a primary portion disposed on a lower surface of the PTC material layer and a secondary portion extending over the underside of the right notch. The left conductive member connects to the left electrode and the first conductive layer and isolates from the second conductive layer. The right conductive member connects to the right electrode and the second conductive layer and isolates from the first conductive layer.

Abstract: An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer has a resistivity less than 0.05 ?·cm and comprises a polymer matrix, a conductive ceramic filler and a carbon-containing conductive filler. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. and comprises 50-60% by volume of the PTC material layer. The conductive ceramic filler having a resistivity less than 500??·cm is dispersed in the polymer matrix and comprises 40-45% by volume of the PTC material layer. The carbon-containing conductive filler is dispersed in the polymer matrix and comprises 0.5-5% by volume of the PTC material layer. At 25° C., a ratio of a hold current to an area of the over-current protection device is 0.21-0.3 A/mm2, and a ratio of an endurable power to the area of the over-current protection device is 4.8-7.2 W/mm2.

Abstract: A surface mountable over-current protection device comprises a PTC material layer, first and second conductive layers, left and right electrodes, left and right conductive members, and left and right insulating members. The PTC material layer comprises a left notch at a left end and a right notch at a right end. The first conductive layer comprises a primary portion disposed on an upper surface of the PTC material layer and a secondary portion extending over the left notch, and the second conductive layer comprises a primary portion disposed on a lower surface of the PTC material layer and a secondary portion extending over the underside of the right notch. The left conductive member connects to the left electrode and the first conductive layer and isolates from the second conductive layer. The right conductive member connects to the right electrode and the second conductive layer and isolates from the first conductive layer.

Abstract: A digital audio ripping device is proposed, which is designed for use to convert the digital audio data that are stored in a particular format on a storage medium, such as Audio CD files, into a standard computer multimedia format, such as the MP3 format, such that the user can utilize a portable MP3 player for playback of MP3-formatted digital audio files extracted from Audio CD. The proposed digital audio ripping device is characterized by the capability of Audio CD ripping to an MP3 multimedia player without having to use a PC, and the capability of performing a folder reorganizing procedure in the event of the MP3 multimedia player being downloading and installing an iTunes program via the Internet so as to allow the MP3 multimedia player to use the iTunes program for playback of the digital audio files extracted from the Audio CD.

Abstract: The present invention relates to both of a bi-stage correlation calculation demodulation system, and a fast walsh block demodulation device at a receiver, wherein the bi-stage correlation calculation demodulation system has a characteristic of bi-stage correlation calculation in which the subsequent second-stage correlation calculations are dependent on the first-stage correlation calculation results by utilizing an incomplete orthogonal property within CCK codewords to arrange the CCK codewords operated in the first-stage correlation calculations and second-stage correlation calculations properly and respectively.

Abstract: A complementary code keying (CCK) demodulation system is disclosed, and more particularly relates to both of a bi-stage correlation calculation demodulation system, and a fast walsh block demodulation device at a receiver, wherein the bi-stage correlation calculation demodulation system has a characteristic of bi-stage correlation calculation in which the subsequent second-stage correlation calculations are dependent on the first-stage correlation calculation results by utilizing an incomplete orthogonal property within CCK codewords to arrange the CCK codewords operated in the first-stage correlation calculations and second-stage correlation calculations properly and respectively. Thus, the operation quantities of correlation calculations are reduced substantially, and the codeword transmitted from transmitter is resolved rapidly, so that the complexity of receiver is decreased and the demodulating speed is speeded up.

Abstract: A quantitative risk assessment system (QRAS) builds a risk model of a system for which risk of failure is being assessed, then analyzes the risk of the system corresponding to the risk model. The QRAS performs sensitivity analysis of the risk model by altering fundamental components and quantifications built into the risk model, then re-analyzes the risk of the system using the modifications. More particularly, the risk model is built by building a hierarchy, creating a mission timeline, quantifying failure modes, and building/editing event sequence diagrams. Multiplicities, dependencies, and redundancies of the system are included in the risk model. For analysis runs, a fixed baseline is first constructed and stored. This baseline contains the lowest level scenarios, preserved in event tree structure. The analysis runs, at any level of the hierarchy and below, access this baseline for risk quantitative computation as well as ranking of particular risks.