Patents by Inventor Yung-Hui Lin

Yung-Hui Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240127958
    Abstract: A method for disease risk assessment includes a data acquiring step, a preprocessing step, and a determining step. In the data acquiring step, a medical record of a subject, a static physiological information of the subject measured, and a dynamic physiological information corresponding to different actions of the subject are obtained. In the preprocessing step, a terminal device is applied for integrating the aforementioned data to generate a current data. In the determining step, the current data is inputted into a prediction model for calculation, so as to generate a disease risk assessment result corresponding to the subject. The assessment result includes a disease category, an onset probability corresponding to the disease category, and an estimated time of the onset of the disease. Thus, the present invention accurately assesses the disease probability of the subject in the future for health improvement and disease prevention and postponement.
    Type: Application
    Filed: October 14, 2022
    Publication date: April 18, 2024
    Inventors: Min-Hui ChiouChang, Yung-Jiun Lin, Wei-Ting Hsieh
  • Patent number: 11950937
    Abstract: A probe cover for an ear thermometer and a grouping method of the same are provided. The probe cover for the ear thermometer includes a conical main body having a closed end and an open end, an annular elastomer, and a flange. The closed end is penetrable by infrared rays, and has different infrared transmittances according to thickness variations of the closed end. The annular elastomer is located between the conical main body and the flange. The flange has a plurality of detection positions, each of which having a positive detection pattern or a negative detection pattern, such that the detection positions are arranged to form a plurality of different detection combinations. The different detection combinations respectively correspond to the different infrared transmittances, and any two of the different detection combinations have the two corresponding infrared transmittances that are different from one another.
    Type: Grant
    Filed: April 7, 2021
    Date of Patent: April 9, 2024
    Assignee: RADIANT INNOVATION INC.
    Inventors: Yung-Chang Chang, Tseng-Lung Lin, Chin-Hui Ku
  • Patent number: 11955338
    Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.
    Type: Grant
    Filed: January 30, 2023
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Chun Huang, Ya-Wen Yeh, Chien-Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Ru-Gun Liu, Chin-Hsiang Lin, Yu-Tien Shen
  • Patent number: 11205597
    Abstract: A method includes forming a first fin extending from a substrate, forming a first gate stack over and along sidewalls of the first fin, forming a first spacer along a sidewall of the first gate stack, the first spacer including a first composition of silicon oxycarbide, forming a second spacer along a sidewall of the first spacer, the second spacer including a second composition of silicon oxycarbide, forming a third spacer along a sidewall of the second spacer, the third spacer including silicon nitride, and forming a first epitaxial source/drain region in the first fin and adjacent the third spacer.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: December 21, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chun Tan, I-Hsieh Wong, Te-En Cheng, Yung-Hui Lin, Wei-Ken Lin, Wei-Yang Lee, Chih-Hung Nien
  • Publication number: 20200105620
    Abstract: A method includes forming a first fin extending from a substrate, forming a first gate stack over and along sidewalls of the first fin, forming a first spacer along a sidewall of the first gate stack, the first spacer including a first composition of silicon oxycarbide, forming a second spacer along a sidewall of the first spacer, the second spacer including a second composition of silicon oxycarbide, forming a third spacer along a sidewall of the second spacer, the third spacer including silicon nitride, and forming a first epitaxial source/drain region in the first fin and adjacent the third spacer.
    Type: Application
    Filed: July 1, 2019
    Publication date: April 2, 2020
    Inventors: Wei-Chun Tan, I-Hsieh Wong, Te-En Cheng, Yung-Hui Lin, Wei-Ken Lin, Wei-Yang Lee, Chih-Hung Nien