Abstract: An integrated low-noise sensing circuit with efficient bias stabilization in accordance with the present invention comprises a first capacitance sensing element, a second capacitance sensing element, a sub-threshold transistor and an amplifier circuit wherein the first stage is an input transistor. The second capacitance sensing element is connected to the first capacitance sensing element. The sub-threshold transistor comprises a body, a gate, a source, a drain, a source-body junction diode and a bulk. The gate forms on top of the body. The source forms on the body and is connected to the first capacitance sensing element and the second capacitance sensing element. The drain forms on the body and is connected to the gate and the amplifier output terminal. The source-body junction diode comprises an anode and a cathode. The anode is connected to the ground.

Abstract: An integrated low-noise sensing circuit with efficient bias stabilization in accordance with the present invention comprises a first capacitance sensing element, a second capacitance sensing element, a sub-threshold transistor and an amplifier circuit wherein the first stage is an input transistor. The second capacitance sensing element is connected to the first capacitance sensing element. The sub-threshold transistor comprises a body, a gate, a source, a drain, a source-body junction diode and a bulk. The gate forms on top of the body. The source forms on the body and is connected to the first capacitance sensing element and the second capacitance sensing element. The drain forms on the body and is connected to the gate and the amplifier output terminal The source-body junction diode comprises an anode and a cathode. The anode is connected to the ground.

Abstract: An amplifier has a self-bias circuit to generate the bias voltage for the input of the amplifying circuit in the amplifier, thereby simplifying the circuit complexity to reduce the size and cost of the amplifier.

Abstract: An amplifier has a self-bias circuit to generate the bias voltage for the input of the amplifying circuit in the amplifier, thereby simplifying the circuit complexity to reduce the size and cost of the amplifier.

Abstract: The invention relates to an optical output system with auto optical power control for an optical mouse. The optical output system comprises: a light emitting device, a driver and an auto power controller. The light emitting device is used for generating emitting light. The driver is used for driving the light emitting device. The auto power controller is used for outputting a control signal to the driver according to at least one input signals so as to control the power of the light emitting device at a predetermined range. According to the invention, the optical output system can output the stable power of the emitting light at a predetermined value within the predetermined range under various conduction and circumference by a feedback control. Furthermore, the optical mouse using the optical output system can work on various reflective surface.

Abstract: A wideband device modeling method comprises using ultra-short time-domain impulse responses measurement and using a subsequent extraction of said ultra-short time-domain impulse responses measurement. The wideband device modeling method in the invention is to provide a model that could faithfully describe an ultra-short TD response and would conform to the wideband consideration. An ultra-short impulse with tens of pico-second width has been used in this work for characterizing the TD responses of the devices. Moreover, the wideband device modeling method in the invention is to provide a layer peeling technique, widely used in characterizing PCB interconnection or package, is mixed with a conventional spiral inductor physical model. The wideband device modeling method in the invention also provides an extension equivalent circuit combined with the BSIM3v3 model.

Abstract: A novel structure of photo sensor is disclosed. The equivalent circuit of the invented photo sensor comprises a photo transistor integrated with a surface photo sensor. The structure of the surface photo sensor is substantially identical to the base-emitter junction of the photo transistor and may be prepared in the same process. The junction depletion region of the surface photo sensor locates adjacent to the light incident surface, whereby decay of incident light is minimal and more electron-hole pairs are generated. The present invention also discloses semiconductor material containing the invented photo sensor assembly of the invented photo sensor and method for preparation of the photo sensor, the semiconductor material and their assemblies.

Abstract: The single element optical sensor of this invention is a two-terminal element and comprises a light absorbing semiconductor layer, potential barrier materials positioned in said light absorbing layer and two electrodes connected to said light absorbing layer. Positions and chemical compositions of the potential barriers are adjusted according to wavebands of interests. Under different bias conditions photoelectric voltages with separated peaks are generated by the invented optical sensor, whereby color elements of an image may be obtained. Distinguish of light waves of selected wavebands may thus be achieved.

Abstract: The invention relates to an optical output system with auto optical power control for an optical mouse. The optical output system comprises: a light emitting device, a driver and an auto power controller. The light emitting device is used for generating emitting light. The driver is used for driving the light emitting device. The auto power controller is used for outputting a control signal to the driver according to at least one input signals so as to control the power of the light emitting device at a predetermined range. According to the invention, the optical output system can output the stable power of the emitting light at a predetermined value within the predetermined range under various conduction and circumference by a feedback control. Furthermore, the optical mouse using the optical output system can work on various reflective surface.

Abstract: The method for wideband device measurement and modeling includes: measurement of an electronic device to obtain a set of time domain raw data representing characteristics of said device; conversion of said time domain raw data into frequency domain raw data; calibration and correction of embedded errors according to said frequency domain raw data to obtain clean frequency domain data representing characteristics of said device; conversion of said frequency domain data into time domain clean data; and establishment of equivalent model of said device according to said time domain data. The time domain raw data are obtained by applying to said device an ultra short impulse and measuring said impulse and its response from said device. Conversion between said time domain data and said frequency domain data may be Fourier transform.

Abstract: The method for wideband device measurement and modeling comprises: measurement of an electronic device to obtain a set of time domain raw data representing characteristics of said device; conversion of said time domain raw data into frequency domain raw data; calibration and correction of embedded errors according to said frequency domain raw data to obtain clean frequency domain data representing characteristics of said device; conversion of said frequency domain data into time domain clean data; and establishment of equivalent model of said device according to said time domain data. The time domain raw data are obtained by applying to said device an ultra short impulse and measuring said impulse and its response from said device. Conversion between said time domain data and said frequency domain data may be Fourier transform. This invention also discloses system for wideband device measurement and modeling using the above method.

Abstract: A wideband device modeling method comprises using ultra-short time-domain impulse responses measurement and using a subsequent extraction of said ultra-short time-domain impulse responses measurement. The wideband device modeling method in the invention is to provide a model that could faithfully describe an ultra-short TD response and would conform to the wideband consideration. An ultra-short impulse with tens of pico-second width has been used in this work for characterizing the TD responses of the devices. Moreover, the wideband device modeling method in the invention is to provide a layer peeling technique, widely used in characterizing PCB interconnection or package, is mixed with a conventional spiral inductor physical model. The wideband device modeling method in the invention also provides an extension equivalent circuit combined with the BSIM3v3 model.

Abstract: Amorphous silicon/amorphous silicon germanium NI1PI2N position detectors are fabricated to suppress visible light and increase detection of infrared light. The material of I1 layer is amorphous silicon or amorphous silicon germanium used to absorb visible light, and material of I2 layer is amorphous silicon germanium or amorphous germanium used to absorb infrared light. A suppression of signal due to the absorption of the visible light and amplification of signals due to absorption of the infrared light can be obtained when the NI1P diode is forward biased and the P12N diode is reverse biased. The optical band gap of the I1 and I2 layers can be controlled by the Si/Ge atomic ratio. The suppression of visible light and enhanced detection of infrared light may be tuned by controlling thickness and optical band gaps of the I1 and I2 layers. The amorphous silicon and amorphous silicon germanium layers may be deposited by square-wave modulation at 13.56 MHz.

Abstract: Amorphous silicon/amorphous silicon germanium NI1PI2N position detectors are fabricated to suppress visible light and increase detection of infrared light. The material of I1 layer is amorphous silicon or amorphous silicon germanium used to absorb visible light, and material of I2 layer is amorphous silicon germanium or amorphous germanium used to absorb infrared light. A suppression of signal due to the absorption of the visible light and amplification of signals due to absorption of the infrared light can be obtained when the NI1P diode is forward biased and the P12N diode is reverse biased. The optical band gap of the 11 and 12 layers can be controlled by the Si/Ge atomic ratio. The suppression of visible light and enhanced detection of infrared light may be tuned by controlling thickness and optical band gaps of the I1 and I2 layers. The amorphous silicon and amorphous silicon germanium layers may be deposited by square-wave modulation at 13.56 MHz.