Patents by Inventor Yung-Kuan Tseng

Yung-Kuan Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7235129
    Abstract: A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate. The crystal phase adjusting buffer includes, for example, nitride and oxide layers on a silicon substrate, or a gallium nitride epitaxial layer on a sapphire substrate, and is used as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.
    Type: Grant
    Filed: April 13, 2004
    Date of Patent: June 26, 2007
    Assignee: Industrial Technology Research Institute
    Inventors: I-Cherng Chen, Yung-Kuan Tseng, Chor-Jye Huang
  • Publication number: 20060093741
    Abstract: The specification discloses a material with a surface nanometer functional structure and the method of manufacturing the same. Using the properties of supercritical fluids, a nanometer structure is formed on the surface of a substrate, resulting in a material with a surface nanometer functional structure. The supercritical fluid carries the precursor of functional materials. Once they reach a reaction balance with the substrate in a high-pressure container, the pressure is released at an appropriate speed. The carbon dioxide supercritical fluid undergoes a vaporization reaction, distributing and adhering the precursors on the substrate to form the surface nanometer functional structure. Utilizing the VLS nanowire growth method, one-dimensional and two-dimensional compound nanometer functional wire structure can be produced.
    Type: Application
    Filed: December 9, 2005
    Publication date: May 4, 2006
    Inventors: I-Cherng Chen, Yung-Kuan Tseng, Tzer-Shen Lin
  • Publication number: 20050223969
    Abstract: A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate. The crystal phase adjusting buffer includes, for example, nitride and oxide layers on a silicon substrate, or a gallium nitride epitaxial layer on a sapphire substrate, and is used as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.
    Type: Application
    Filed: April 13, 2004
    Publication date: October 13, 2005
    Applicant: Industrial Technology Research Institute
    Inventors: I-Cherng Chen, Yung-Kuan Tseng, Chor-Jye Huang
  • Publication number: 20040137214
    Abstract: The specification discloses a material with a surface nanometer functional structure and the method of manufacturing the same. Using the properties of supercritical fluids, a nanometer structure is formed on the surface of a substrate, resulting in a material with a surface nanometer functional structure. The supercritical fluid carries the precursor of functional materials. Once they reach a reaction balance with the substrate in a high-pressure container, the pressure is released at an appropriate speed. The carbon dioxide supercritical fluid undergoes a vaporization reaction, distributing and adhering the precursors on the substrate to form the surface nanometer functional structure. Utilizing the VLS nanowire growth method, one-dimensional and two-dimensional compound nanometer functional wire structure can be produced.
    Type: Application
    Filed: October 23, 2003
    Publication date: July 15, 2004
    Inventors: I-Cherng Chen, Yung-Kuan Tseng, Tzer-Shen Lin