Patents by Inventor Yung-Si YU
Yung-Si YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11929328Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.Type: GrantFiled: January 4, 2021Date of Patent: March 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Yang Wu, Shiu-Ko JangJian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20240079332Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.Type: ApplicationFiled: November 8, 2023Publication date: March 7, 2024Inventors: Chia-Yang Wu, Shiu-Ko JangJian, Ting-Chun Wang, Yung-Si Yu
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Patent number: 11784240Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a contact layer over a metal silicide layer. The contact layer extends through a first dielectric structure. The semiconductor device structure includes a first metal nitride barrier layer over sidewalls of the contact layer. The first metal nitride barrier layer is directly adjacent to the first dielectric structure. The semiconductor device structure includes a second metal nitride barrier layer partially between the contact layer and the metal silicide layer and partially between the contact layer and the first metal nitride barrier layer. The metal silicide layer is below the first metal nitride barrier layer and the second metal nitride barrier layer.Type: GrantFiled: June 6, 2022Date of Patent: October 10, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Yang Wu, Shiu-Ko Jangjian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20230268425Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a dielectric structure over the substrate. The semiconductor device structure includes a contact structure passing through the dielectric structure. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer, the contact layer passes through the first barrier layer, the first barrier layer passes through the second barrier layer, the first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of a sidewall of the first barrier layer and exposes a first lower portion of the sidewall of the first barrier layer, and the sidewall faces away from the contact layer.Type: ApplicationFiled: April 26, 2023Publication date: August 24, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Yang WU, Shiu-Ko JANGJIAN, Ting-Chun WANG, Yung-Si YU
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Patent number: 11670704Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a dielectric structure over the substrate. The semiconductor device structure includes a contact structure passing through the dielectric structure. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer. The first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of the first barrier layer, the contact layer passes through the first barrier layer and extends into the dielectric structure, and the first barrier layer passes through the second barrier layer and extends into the dielectric structure.Type: GrantFiled: June 7, 2021Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Yang Wu, Shiu-Ko Jangjian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20220302283Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a contact layer over a metal silicide layer. The contact layer extends through a first dielectric structure. The semiconductor device structure includes a first metal nitride barrier layer over sidewalls of the contact layer. The first metal nitride barrier layer is directly adjacent to the first dielectric structure. The semiconductor device structure includes a second metal nitride barrier layer partially between the contact layer and the metal silicide layer and partially between the contact layer and the first metal nitride barrier layer. The metal silicide layer is below the first metal nitride barrier layer and the second metal nitride barrier layer.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Yang WU, Shiu-Ko JANGJIAN, Ting-Chun WANG, Yung-Si YU
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Publication number: 20210296472Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a dielectric structure over the substrate. The semiconductor device structure includes a contact structure passing through the dielectric structure. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer. The first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of the first barrier layer, the contact layer passes through the first barrier layer and extends into the dielectric structure, and the first barrier layer passes through the second barrier layer and extends into the dielectric structure.Type: ApplicationFiled: June 7, 2021Publication date: September 23, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Yang WU, Shiu-Ko JANGJIAN, Ting-Chun WANG, Yung-Si YU
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Patent number: 11031488Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a transistor over a substrate. The semiconductor device structure includes a dielectric structure over the substrate and covering the transistor. The semiconductor device structure includes a contact structure passing through the dielectric structure and electrically connected to the transistor. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer, the first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of the first barrier layer, a first lower portion of the first barrier layer is in direct contact with the dielectric structure, and a thickness of the first lower portion increases toward the substrate.Type: GrantFiled: April 20, 2020Date of Patent: June 8, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Yang Wu, Shiu-Ko Jangjian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20210125935Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.Type: ApplicationFiled: January 4, 2021Publication date: April 29, 2021Inventors: Chia-Yang Wu, Shiu-Ko JangJian, Ting-Chun Wang, Yung-Si Yu
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Patent number: 10886226Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.Type: GrantFiled: July 31, 2018Date of Patent: January 5, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD.Inventors: Chia-Yang Wu, Shiu-Ko JangJian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20200251577Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a transistor over a substrate. The semiconductor device structure includes a dielectric structure over the substrate and covering the transistor. The semiconductor device structure includes a contact structure passing through the dielectric structure and electrically connected to the transistor. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer, the first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of the first barrier layer, a first lower portion of the first barrier layer is in direct contact with the dielectric structure, and a thickness of the first lower portion increases toward the substrate.Type: ApplicationFiled: April 20, 2020Publication date: August 6, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Yang WU, Shiu-Ko JANGJIAN, Ting-Chun WANG, Yung-Si YU
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Patent number: 10629708Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric structure over a transistor. The method includes forming a first recess in the dielectric structure. The method includes forming a first barrier layer over a first inner wall of the first recess. The first barrier layer has a first opening over a first portion of the dielectric structure, and the first barrier layer close to a first bottom surface of the first recess is thicker than the first barrier layer close to a top surface of the dielectric structure. The method includes removing the first portion through the first opening to form a second recess in the dielectric structure. The method includes forming a second barrier layer over a second inner wall of the second recess. The method includes forming a contact layer in the first opening and the second opening.Type: GrantFiled: October 30, 2018Date of Patent: April 21, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Yang Wu, Shiu-Ko Jangjian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20200043858Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.Type: ApplicationFiled: July 31, 2018Publication date: February 6, 2020Inventors: Chia-Yang Wu, Shiu-Ko JangJian, Ting-Chun Wang, Yung-Si Yu
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Publication number: 20190148522Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric structure over a transistor. The method includes forming a first recess in the dielectric structure. The method includes forming a first barrier layer over a first inner wall of the first recess. The first barrier layer has a first opening over a first portion of the dielectric structure, and the first barrier layer close to a first bottom surface of the first recess is thicker than the first barrier layer close to a top surface of the dielectric structure. The method includes removing the first portion through the first opening to form a second recess in the dielectric structure. The method includes forming a second barrier layer over a second inner wall of the second recess. The method includes forming a contact layer in the first opening and the second opening.Type: ApplicationFiled: October 30, 2018Publication date: May 16, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Yang WU, Shiu-Ko JANGJIAN, Ting-Chun WANG, Yung-Si YU