Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

Abstract: An integrated circuit (IC) structure includes a substrate having several regions, several semiconductor devices formed at the substrate and respectively within the regions, and an ultra-deep (UD) trench isolation structure formed in the substrate. The substrate has a top surface and a bottom surface oppositely, and the UD trench isolation structure formed in the substrate surrounds peripheries of each of the regions for structurally and physically isolating the semiconductor devices within different regions. The UD trench isolation structure penetrates the substrate by extending from the top surface of the substrate to the bottom surface of the substrate.

Abstract: A tandem solar cell module includes a transparent substrate, a first solar cell unit, and a second solar cell unit disposed between the transparent substrate and the first solar cell unit. The first solar cell unit includes a first electrode, a second electrode, and a first absorption layer disposed between the first electrode and the second electrode, and the second solar cell unit includes a third electrode, a fourth electrode, and a second absorption layer disposed between the third electrode and the fourth electrode, wherein the second electrode is located adjacent to the third electrode, and the positions of the second electrode, the third electrode, and the fourth electrode are corresponding to each other.

Abstract: A tandem solar cell module includes a transparent substrate, a first solar cell unit, and a second solar cell unit disposed between the transparent substrate and the first solar cell unit. The first solar cell unit includes a first electrode, a second electrode, and a first absorption layer disposed between the first electrode and the second electrode, and the second solar cell unit includes a third electrode, a fourth electrode, and a second absorption layer disposed between the third electrode and the fourth electrode, wherein the second electrode is located adjacent to the third electrode, and the positions of the second electrode, the third electrode, and the fourth electrode are corresponding to each other.

Abstract: Disclosed is a solar cell including a first electrode, a second electrode, and a first conversion layer disposed therebetween. The first electrode is closer to a light incident side than the second electrode. The first conversion layer is a composition-gradient perovskite. A part of the first conversion layer adjacent to the first electrode has an energy gap less than that of a part of the first conversion layer adjacent to the second electrode.

Abstract: A method for forming a thin film having sulfide single-crystal nanoparticles includes dropping a sulfide precursor solution on the surface of a Group VI absorption layer, and then performing thermal decomposition on the sulfide precursor solution under a predetermined temperature to form a thin film consisting of sulfide single-crystal nanoparticles on the surface of the Group VI absorption layer.

Abstract: Disclosed is a solar cell including a first electrode, a second electrode, and a first conversion layer disposed therebetween. The first electrode is closer to a light incident side than the second electrode. The first conversion layer is a composition-gradient perovskite. A part of the first conversion layer adjacent to the first electrode has an energy gap less than that of a part of the first conversion layer adjacent to the second electrode.

Abstract: A compound solar cell includes a substrate, a first electrode located on the substrate, a Group VI absorption layer located on the first electrode, and a second electrode located on the group VI absorption layer. Moreover, a first buffer layer is between the second electrode and the Group VI absorption layer, wherein the first buffer layer is a thin film consisting of sulfide single-crystal nanoparticles.

Abstract: Disclosed is a solar cell including a first electrode, a second electrode, and a first conversion layer disposed therebetween. The first electrode is closer to a light incident side than the second electrode. The first conversion layer is a composition-gradient perovskite. A part of the first conversion layer adjacent to the first electrode has an energy gap less than that of a part of the first conversion layer adjacent to the second electrode.

Abstract: Disclosed is a solar cell including a first electrode, a second electrode, and a first conversion layer disposed therebetween. The first electrode is closer to a light incident side than the second electrode. The first conversion layer is a composition-gradient perovskite. A part of the first conversion layer adjacent to the first electrode has an energy gap less than that of a part of the first conversion layer adjacent to the second electrode.

Abstract: A HIT solar cell is provided, including a p-type crystalline silicon substrate having a light-receiving surface, a first intrinsic amorphous silicon thin-film layer formed on the light-receiving surface of the p-type crystalline silicon substrate, an n-type amorphous oxide layer formed on the first intrinsic amorphous silicon thin-film layer, and a first transparent conductive layer formed on the n-type amorphous oxide layer. In the HIT solar cell, the n-type amorphous oxide layer can be directly formed, without forming the first intrinsic amorphous silicon thin-film layer, and the n-type amorphous oxide layer can be divided into an n?-type amorphous oxide layer and an n+-type amorphous oxide layer that are formed sequentially.