Abstract: A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.

Abstract: A decoration panel includes a first substrate, a first transparent conductive element, a transparent structure, a second substrate, a second transparent conductive element, and a first cholesteric liquid crystal layer. The first transparent conductive element is disposed on the first substrate. The transparent structure is disposed on the first substrate. The second substrate is disposed opposite to the first substrate. The second transparent conductive element is disposed on the second substrate. The first cholesteric liquid crystal layer is disposed between the first transparent conductive element and the second transparent conductive element. A display apparatus is adapted to render a decoration pattern, and the decoration pattern corresponds to the transparent structure. Moreover, a display apparatus including the decoration panel is also provided.

Abstract: The present disclosure relates to an innovative leather and a manufacturing method thereof. The innovative leather includes a TPU substrate, a TPU adhering layer, and a TPU surface layer. The TPU adhering layer is disposed on the TPU substrate. The TPU surface layer is disposed on the TPU adhering layer. All materials of the innovative leather of the present disclosure are the same TPU materials, thus the innovative leather of the present disclosure can be recycled after the innovative leather of the present disclosure is used. The innovative leather of the present disclosure has recycling benefit.

Abstract: A deflecting plate includes a silicon-on-insulator (SOI) substrate. The SOI substrate includes: an insulator layer having a top surface and a bottom surface; a device layer coupled to the insulator layer at the top surface, wherein multiple deflecting apertures are disposed in the device layer, each of which extending from a top open end to a bottom open end through the device layer, and wherein the bottom open end is coplanar with the top surface of the insulator layer; and a handle substrate coupled to the insulator layer at the bottom surface, wherein a cavity is disposed in the handle substrate and extends from a cavity open end to a cavity bottom wall, and wherein the bottom wall is coplanar with the top surface of the insulator layer, such that the bottom open end of each deflecting aperture is exposed to the cavity.

Abstract: In some aspects, a mask shape is represented by vertices that are connected by segments. A correction to the mask shape is received. The correction may include displacements of the segments and displacements of the vertices. The mask shape is modified by a processor, as follows. The segments are moved according to the segment displacements. As part of this process, vertices that are endpoints of the moved segments are replicated. The replicated vertices are then collapsed. The resulting vertices are then moved according to the vertex displacements. This process of modifying the mask shape may be used as part of a mask synthesis process, to synthesize or correct the mask shapes according to some desired result.

Abstract: The present disclosure discloses a method for recycling all types of lithium batteries. First, the lithium battery waste is acid-leached to obtain a solution containing most of metal ions. After filtering, the solution is separated from the remaining solids, and then the obtained solution is subjected to separate precipitation many times. After separately adjusting the pH value of the solution many times, adding precipitants with a high selectivity ratio, and matching with filtration and separation reaction, all ions in the lithium battery waste are sequentially precipitated in forms of iron phosphate (FePO4), aluminum hydroxide (Al(OH)3), manganese oxide (MnO2), dicobalt trioxide (cobalt oxide, Co2O3), nickel hydroxide (Ni(OH)2), and lithium carbonate (Li2CO3).

Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.

Abstract: Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending bet ween the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.

Abstract: Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending between the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first gate electrode, which includes a first section having a slanted sidewall and an imaginary sidewall, a second section extending radially from the imaginary sidewall of the first section, the second section has a curved bottom, and a third section extending downwardly from the first section, wherein the third section has a straight sidewall, and the slanted sidewall of the first section connects the straight sidewall of the third section to the curved bottom of the second section. The semiconductor device structure also includes a first gate dielectric layer in contact with the straight sidewall of the third section and the slanted sidewall of the first section, and a first gate spacer in contact with the first gate dielectric layer and the slanted sidewall of the first section.

Abstract: An air adjusting device includes a casing, a hood, a first airflow generating unit, a tunnel and an air conditioning module. The hood has a wind inlet. The first airflow generating unit is connected to the hood. The tunnel is connected to the first airflow generating unit, wherein the tunnel has a wind outlet. The hood, the first airflow generating unit and the tunnel form an airflow passage. The airflow passage is isolated from an internal space of the casing. At least one part of the air conditioning module is disposed at the wind inlet. The first airflow generating unit draws a first ambient air into the airflow passage from the wind inlet. A temperature of the first ambient air is adjusted by the air conditioning module and discharged from the wind outlet through the airflow passage.

Abstract: Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending between the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.

Abstract: Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending between the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.

Abstract: Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending between the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.

Abstract: A map building system, method and computer readable media thereof are provided, which are applied to a movable apparatus or which with a server apparatus. The system includes at least two distance sensing units, a inertial sensing unit, a parameter processing unit, and a display unit. The distance sensing units detect a distance between the movable device and at least one obstacle object and create at least two range data. The inertial sensing unit detects moving mode of the movable device and creates at least one moving data. The parameter processing unit calculates an area map data according the range data and the moving data. The area map data is shown on the display unit.

Abstract: A positioning apparatus is disclosed, which comprises: a position detection module, including an inertial sensor, a magnetometer, and a global positioning device, being used for detection a movement of an object and thus generating a positioning signal accordingly; wherein the positioning signal is transmitted to a control unit and then to a signal processing device where it is being processed and converted into an angular/displacement signal to be transmitted to a monitoring device by way of a signal transmission device for enabling the monitoring device to track the movement of the object. In a preferred embodiment, both of the monitoring device and the signal transmission device are respectively being configured with a displaying unit for displaying the movement of the object. In addition, the positioning apparatus further comprises an identity module, for providing a unique identification code to the object to be used for identifying the same.

Abstract: A method for modifying navigation information is provided in the present invention. The method comprises steps of detecting a status information with respect to a moving carrier guiding by a navigating route; comparing the status information with a characteristic information corresponding to a characteristic point on the navigating route; and finally, determining whether the moving carrier is passing the characteristic point according to the comparing result and modifying the coordinate position of the carrier. In another embodiment, the present invention further provides a navigating apparatus comprising a sensing module for detecting the status of the moving carrier, a signal processing unit, and a storage unit for storing a map information. The signal processing unit comparing the status information to the characteristic information with respect to the characteristic point on the navigating route, and modifying the deviation of the moving carrier to the modify location according to the comparing result.

Abstract: A map building system, method and computer readable media thereof are provided, which are applied to a movable apparatus or which with a server apparatus. The system includes at least two distance sensing units, a inertial sensing unit, a parameter processing unit, and a display unit. The distance sensing units detect a distance between the movable device and at least one obstacle object and create at least two range data. The inertial sensing unit detects moving mode of the movable device and creates at least one moving data. The parameter processing unit calculates an area map data according the range data and the moving data. The area map data is shown on the display unit.