Abstract: The disclosure provides a straight waveguide phase change all-photonic Boolean logic device and a full binary logic implementation method thereof, including a ridge- shape straight waveguide structure, two phase change functional units near the two ends and a Bragg grating between two phase change functional units. The phase change functional units and Bragg grating are situated on the ridge of the waveguide. The write and read optic pulses have different wavelengths. The Bragg grating are designed to reflect the write optical pulse and transmit the read pulse, so that write pulses input from the two ends only act on the phase change functional unit closest to that end, and read pulse can go through the whole device from input end to output end. In terms of the logic implementation method, with three-step write operation, 16 full Boolean logic functions can be implemented in this device.

Abstract: A phase change memory device based on a nano current channel is provided. A nano current channel layer structure is adopted and configured to limit the current channel. As such, when flowing through the layer, the current enters the phase change layer from nano crystal grains with high electrical conductivity, and the current is thereby confined in the nano current channels. By using the nano-scale conductive channels, the contact area between the phase change layer and the electrode layer is significantly decreased, the current density at local contact channel is significantly increased, and heat generation efficiency of the current in the phase change layer is improved. Moreover, an electrically insulating and heat-insulating material with low electrical conductivity and low thermal conductivity prevents heat in the phase change layer from being dissipated to the electrode layer, and Joule heat utilization efficiency of the phase change layer is thereby improved.

Abstract: The disclosure provides a straight waveguide phase change all-photonic Boolean logic device and a full binary logic implementation method thereof, including a straight waveguide structure, a phase change functional unit covered on top of a waveguide and a protective layer thereof, and a waveguide Bragg grating structure. In terms of the logic implementation method, optical pulses are respectively input from two ends of the device to modulate the state of the phase change functional unit. The parameters of the waveguide Bragg grating structure are set to reflect the wavelength of the pump optical pulse, so that write pulses input from the two ends only act on the phase change functional unit closest to that end. A probe optical pulse with a specific wavelength is selected, and the probe light under the wavelength is less reflected by the waveguide Bragg grating and does not affect the reading of the state of the device.

Abstract: A phase change memory device based on a nano current channel is provided. A nano current channel layer structure is adopted and configured to limit the current channel. As such, when flowing through the layer, the current enters the phase change layer from nano crystal grains with high electrical conductivity, and the current is thereby confined in the nano current channels. By using the nano-scale conductive channels, the contact area between the phase change layer and the electrode layer is significantly decreased, the current density at local contact channel is significantly increased, and heat generation efficiency of the current in the phase change layer is improved. Moreover, an electrically insulating and heat-insulating material with low electrical conductivity and low thermal conductivity prevents heat in the phase change layer from being dissipated to the electrode layer, and Joule heat utilization efficiency of the phase change layer is thereby improved.