Abstract: The present disclosure discloses an application of cuprous sulfide in a recovery of Au (III) from aqueous solutions, which relates to the fields of hydrometallurgy and precious metal recovery. The method of the present disclosure uses cuprous sulfide nanoparticles to recover Au (III) from aqueous solution, and undergoes gold adsorption under mechanical stirring. The method described in the present disclosure can efficiently recover Au (III) from aqueous solutions, has good recovery effects on Au (III) from acidic waste liquid, and has the advantages of energy conservation, environmental protection, and low cost.

Abstract: The present disclosure discloses an application of cuprous sulfide in a recovery of Au (III) from aqueous solutions, which relates to the fields of hydrometallurgy and precious metal recovery. The method of the present disclosure uses cuprous sulfide nanoparticles to recover Au (III) from aquesous solution, and undergoes gold adsorption under mechanical stirring. The method described in the present disclosure can efficiently recover Au (III) from aqueous solutions, has good recovery effects on Au (III) from acidic waste liquid, and has the advantages of energy conservation, environmental protection, and low cost.

Abstract: A method of fabricating an integrated circuit includes etching trenches in a first surface of a semiconductor layer. A trench dielectric layer is formed over the first surface and over bottoms and sidewalls of the trenches and a doped polysilicon layer is formed over the trench dielectric layer and within the trenches. The doped polysilicon layer is patterned to form a polysilicon bridge that connects to the polysilicon within the filled trenches and a blanket implant of a first dopant is directed to the polysilicon bridge and to the first surface. The blanket implant forms a contact region extending from the first surface into the semiconductor layer.

Abstract: Gas phase etching device and gas phase etching apparatus are provided. The gas phase etching device includes: a reaction chamber body, defining a space as a reaction chamber; a pedestal, disposed inside the reaction chamber for holding a workpiece; an inlet member, connected to the reaction chamber body for introducing etchants into the reaction chamber; a pressure regulating assembly, connected to the reaction chamber body for regulating a pressure inside the reaction chamber; a first temperature controller, connected to the reaction chamber body for controlling a temperature therein to a first temperature; and a second temperature controller, connected to the pedestal for controlling a temperature to a second temperature. The first temperature is a temperature that prevents the reaction chamber from being corroded by the etchants. The second temperature is a temperature under which the workpiece held by the pedestal satisfies a temperature requirement for directly performing a subsequent process.

Abstract: Gas phase etching device and gas phase etching apparatus are provided. The gas phase etching device includes: a reaction chamber body, defining a space as a reaction chamber; a pedestal, disposed inside the reaction chamber for holding a workpiece; an inlet member, connected to the reaction chamber body for introducing etchants into the reaction chamber; a pressure regulating assembly, connected to the reaction chamber body for regulating a pressure inside the reaction chamber; a first temperature controller, connected to the reaction chamber body for controlling a temperature therein to a first temperature; and a second temperature controller, connected to the pedestal for controlling a temperature to a second temperature. The first temperature is a temperature that prevents the reaction chamber from being corroded by the etchants. The second temperature is a temperature under which the workpiece held by the pedestal satisfies a temperature requirement for directly performing a subsequent process.

Abstract: This invention involves a liquid-liquid separation device, which includes a centrifugal cylinder. The centrifugal cylinder maintains a liquid inlet/outlet, and centripetal float valve inside, which is mounted on the wall of a cylinder that produces the centrifugal force. Liquids of various densities enter the centrifugal cylinder; under the action of centrifugal force, the liquid medium of the highest density moves to the cylinder wall first, while the liquids of lower densities follow in sequence; when the inward buoyant force that the float bears in the liquids of various densities is greater than the outward centrifugal force generated due to its own mass, the float will move inwards to open the passageway and discharge the heavy medium deposited on the cylinder wall, thus achieving the automatic separation.

Abstract: This invention involves a liquid-liquid separation device, which includes a centrifugal cylinder. The centrifugal cylinder maintains a liquid inlet/outlet, and centripetal float valve inside, which is mounted on the wall of a cylinder that produces the centrifugal force. This invention allows the liquids of various densities to enter the centrifugal cylinder; under the action of centrifugal force, the liquid medium of the highest density approaches to the cylinder wall first, while the liquids of lower densities follow in sequence; when the inward buoyant force that the float bears in the liquids of various densities is over the outward centrifugal force generated due to its own mass, the float will move inwards to open the passageway and discharge the heavy medium deposited on the cylinder wall, thus achieving the automatic separation.