Abstract: A control method and control circuit for a switched-mode power supply (SMPS) and a control chip are disclosed. The SMPS is switched between different operating modes based on different levels of its output voltage. When the output voltage is lower than a first reference and the difference between it and the first reference exceeds a threshold, an operating frequency of a power transistor and output voltage are controlled to satisfy a proportional relationship defined by an associated slope. When the output voltage is lower than the first reference and the difference between it and the first reference is below the threshold, the power transistor is controlled to operate at a fixed frequency. When the output voltage is higher than the first reference, the power transistor is controlled to operate at a variable frequency.

Abstract: In some embodiments, apparatuses and methods are provided herein useful to detecting text in images. In some embodiments, a system for detecting text in images comprises a database configured to store images and a control circuit configured to retrieve an image, generate, based on the image, a collection of augmented images, detect characters in each of the augmented images, generate bounding boxes for the characters in each of augmented images, recognize the characters in each of the augmented images, select, based on the recognition of the characters in each of the augmented images, candidate characters, wherein the candidate characters are selected based on consistency of the recognition of the characters in each of the augmented images, detect, for the image, a color associated with the characters, and store, in the database, the image, the candidate characters, and the color associated with the characters.

Abstract: A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.

Abstract: A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.

Abstract: A resistive random access memory (Device) is disclosed. The Device includes a substrate, a first electrode formed atop the substrate, a tunneling barrier layer formed atop the first electrode, an active material formed atop the tunneling barrier layer, an isolation layer formed atop the active material, and a second electrode formed atop the isolation layer, the first electrode and the second electrode provide electrical connectivity to external components, where the active material is a phase change material which undergoes phase transition in the presence of an electric field, Joule heating, or a combination thereof.

Abstract: A resistive random access memory (Device) is disclosed. The Device includes a substrate, a first electrode formed atop the substrate, a tunneling barrier layer formed atop the first electrode, an active material formed atop the tunneling barrier layer, an isolation layer formed atop the active material, and a second electrode formed atop the isolation layer, the first electrode and the second electrode provide electrical connectivity to external components, where the active material is a phase change material which undergoes phase transition in the presence of an electric field, Joule heating, or a combination thereof.

Abstract: A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.