Patents by Inventor Yuri Barsukov

Yuri Barsukov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching method using remote plasma source, and method of fabricating semiconductor device including the etching method
    Patent number: 10418250
    Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: September 17, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gon-jun Kim, Yuri Barsukov, Vladimir Volynets, Dali Liu, Sang-jin An, Beom-jin Yoo, Sang-heon Lee, Shamik Patel
  • Pulsed plasma analyzer and method for analyzing the same
    Patent number: 10249485
    Abstract: A pulsed plasma analyzer includes a pulse modulator that controls an off-time of a pulsed plasma that includes a target radical, an optical spectrometer that measures optical emissions of the pulsed plasma after the off-time to determine optical emission data, and a concentration estimating module that estimates a concentration of the target radical during the off-time based on an initial optical emission value of the optical emission data that changes as a function of the off-time, and outputs an estimated concentration.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: April 2, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Vladimir Volynets, Protopopov Vladimir, Young Do Kim, Yuri Barsukov, Sang Heon Lee, Sung Ho Jang
  • ETCHING METHOD USING REMOTE PLASMA SOURCE, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE ETCHING METHOD
    Publication number: 20180374709
    Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.
    Type: Application
    Filed: January 12, 2018
    Publication date: December 27, 2018
    Inventors: Gon-jun KIM, Yuri BARSUKOV, Vladimir VOLYNETS, Dali LIU, Sang-jin AN, Beom-jin YOO, Sang-heon LEE, Shamik PATEL
  • PULSED PLASMA ANALYZER AND METHOD FOR ANALYZING THE SAME
    Publication number: 20180130651
    Abstract: A pulsed plasma analyzer includes a pulse modulator that controls an off-time of a pulsed plasma that includes a target radical, an optical spectrometer that measures optical emissions of the pulsed plasma after the off-time to determine optical emission data, and a concentration estimating module that estimates a concentration of the target radical during the off-time based on an initial optical emission value of the optical emission data that changes as a function of the off-time, and outputs an estimated concentration.
    Type: Application
    Filed: October 6, 2017
    Publication date: May 10, 2018
    Inventors: VLADIMIR VOLYNETS, Protopopov Vladimir, Young Do Kim, Yuri Barsukov, Sang Heon Lee, Sung Ho Jang