Abstract: A perception system for a motor vehicle includes a camera with a lens having a field of view and configured to focus incident light from the field of view. The field of view includes a road having a road surface. The perception system also includes an imaging sensor arranged in the camera. The imaging sensor has a photosensitive surface defined by an imaging surface area configured to capture the incident light focused from the field of view. A first portion of the imaging surface area is configured to capture an image of the road. The perception system further includes a first polarizer array arranged across the first portion of the imaging surface area and configured to reduce glare from the road surface.

Abstract: A perception system for a motor vehicle includes a camera with a lens having a field of view and configured to focus incident light from the field of view. The field of view includes a road having a road surface. The perception system also includes an imaging sensor arranged in the camera. The imaging sensor has a photosensitive surface defined by an imaging surface area configured to capture the incident light focused from the field of view. A first portion of the imaging surface area is configured to capture an image of the road. The perception system further includes a first polarizer array arranged across the first portion of the imaging surface area and configured to reduce glare from the road surface.

Abstract: A metrology system may include an imaging sub-system including one or more lenses and a detector to image a sample, where the sample includes metrology target elements on two or more sample layers. The metrology system may further include a controller to determine layer-specific imaging configurations of the imaging sub-system to image the metrology target elements on the two or more sample layers within a selected image quality tolerance, where each layer-specific imaging configuration includes a selected configuration of one or more components of the imaging sub-system. The controller may further receive, from the imaging sub-system, one or more images of the metrology target elements on the two or more sample layers generated using the layer-specific imaging configurations. The controller may further provide a metrology measurement based on the one or more images of the metrology target elements on the two or more sample layers.

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

Abstract: An overlay metrology system may scan a sample including inverted Moiré structure pairs along a scan direction, include an illumination sub-system to illuminate first and second Moiré structures of one of an inverted Moiré structure pair with common mutually coherent illumination beam distributions, and include an objective lens to capture at least +/?1 diffraction orders from sample, where a first pupil plane includes overlapping distributions of the collected light with an interference pattern associated with relative wavefront tilt. The system may also include a diffractive element in the first pupil plane, where one diffraction order associated with the first Moiré structure and one diffraction order associated with the second Moiré structure overlap at a common overlap region in a field plane, and a collection field stop located in the field plane to pass light in the common overlap region and block remaining light and remove the relative wavefront tilt.

Abstract: Systems and methods are provided which utilize optical microcavity probes to map wafer topography by near-field interactions therebetween in a manner which complies with high volume metrology requirements. The optical microcavity probes detect features on a wafer by shifts in an interference signal between reference radiation and near-field interactions of radiation in the microcavities and wafer features, such as device features and metrology target features. Various illumination and detection configurations provide quick and sensitive signals which are used to enhance optical metrology measurements with respect to their accuracy and sensitivity. The optical microcavity probes may be scanned at a controlled height and position with respect to the wafer and provide information concerning the spatial relations between device and target features.

Abstract: An overlay metrology system may include an illumination an illumination source to generate an illumination beam, one or more illumination optics to direct the illumination beam to an overlay target on a sample as the sample is scanned relative to the illumination beam along a scan direction, the target including one or more cells having Moiré structures. The system may also include two photodetectors at locations of a pupil plane associated with Moiré or overlapping diffraction orders from the Moiré structures. The system may then generate overlay measurements based on time-varying interference signals captured by the detector as the sample is scanned.

Abstract: A system includes an illumination source configured to generate an illumination beam, and a collection sub-system that includes an objective lens, one or more detectors located at a collection pupil plane, a light modulator, and a controller. The light modulator is configured to direct one or more selected portions of measurement light to the one or more detectors. The controller includes one or more processors configured to execute program instructions causing the one or more processors to execute a metrology recipe by: receiving detection signals from the one or more detectors, wherein the detection signals are associated with the one or more selected portions of the measurement light directed to the one or more detectors; and generating an overlay measurement associated with at least two layers of a sample based on the detection signals.

Abstract: An overlay metrology system may scan a sample including inverted Moire structure pairs along a scan direction, include an illumination sub-system to illuminate first and second Moire structures of one of an inverted Moire structure pair with common mutually coherent illumination beam distributions, and include an objective lens to capture at least +/-1 diffraction orders from sample, where a first pupil plane includes overlapping distributions of the collected light with an interference pattern associated with relative wavefront tilt. The system may also include a diffractive element in the first pupil plane, where one diffraction order associated with the first Moire structure and one diffraction order associated with the second Moiré structure overlap at a common overlap region in a field plane, and a collection field stop located in the field plane to pass light in the common overlap region and block remaining light and remove the relative wavefront tilt.

Abstract: A system and method for generating an angular calibration factor (ACF) for a metrology tool useful in a fabrication process, the method including providing the metrology tool, the metrology tool including a stage and a housing, measuring a rotational orientation of the stage relative to the housing and generating the ACF for the stage based at least partially on the rotational orientation.

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

Abstract: A system for use with a misregistration metrology tool (MMT), the system including a database including a plurality of process variation (PV) categories and a corresponding plurality of parameter sets and a process variation accommodation engine (PVAE) including a measurement site process variation category associator (MSPVCA) operative to associate a measurement site being measured by the MMT, at least partially based on an MMT output relating to the measurement site, with a measurement site process variation category (MSPVC), the MSPVC being one of the plurality of PV categories, a measurement site parameter set retriever (MSPSR) operative to retrieve a measurement site parameter set (MSPS) corresponding to the MSPVC and a measurement site parameter set communicator (MSPSC) operative to communicate the MSPS to the MMT.

Abstract: A target for use in the measurement of misregistration between layers formed on a wafer in the manufacture of semiconductor devices, the target including a first pair of periodic structures (FPPS) and a second pair of periodic structures (SPPS), each of the FPPS and the SPPS including a first edge, a second edge, a plurality of first periodic structures formed in a first area as part of a first layer and having a first pitch along a first pitch axis, the first pitch axis not being parallel to either of the first edge or second edge, and a plurality of second periodic structures formed in a second area as part of a second layer and having the first pitch along a second pitch axis, the second pitch axis being generally parallel to the first pitch axis.

Abstract: A metrology target is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology target includes a first set of pattern elements having a first pitch, where the first set of pattern elements includes segmented pattern elements. The metrology target includes a second set of pattern elements having a second pitch, where the second set of pattern elements includes segmented pattern elements. The metrology target includes a third set of pattern elements having a third pitch, where the third set of pattern elements includes segmented pattern elements.

Abstract: A metrology target is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology target includes a first set of pattern elements having a first pitch, where the first set of pattern elements includes segmented pattern elements. The metrology target includes a second set of pattern elements having a second pitch, where the second set of pattern elements includes segmented pattern elements. The metrology target includes a third set of pattern elements having a third pitch, where the third set of pattern elements includes segmented pattern elements.

Abstract: Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.

Abstract: Metrology methods and tools are provided, which enhance the accuracy of the measurements and enable simplification of the measurement process as well as improving the correspondence between the metrology targets and the semiconductor devices. Methods comprise illuminating the target in a Littrow configuration to yield a first measurement signal comprising a ?1st diffraction order and a 0th diffraction order and a second measurement signal comprising a +1st distraction order and a 0th diffraction order, wherein the ?1st diffraction order of the first measurement signal and the +1st diffraction order of the second measurement signal are diffracted at 180° to a direction of the illumination, performing a first measurement of the first measurement signal and a second measurement of the second measurement signal, and deriving metrology metric(s) therefrom. Optionally, a reflected 0th diffraction order may be split to yield components which interact with the ?1st and +1st diffraction orders.

Abstract: Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture) >? yielding a spot diameter <1?, measuring interference signals of zeroth and first diffraction orders, and constructing the signal matrix from the measured signals with respect to the illumination parameters and the spot locations on the target; and deriving a target overlay by analyzing the signal matrix. The SCOL targets may be reduced to be a tenth in size with respect to prior art targets, as less and smaller target cells are required, and be easily set in-die to improve the accuracy and fidelity of the metrology measurements.

Abstract: A target for use in the measurement of misregistration between layers formed on a wafer in the manufacture of semiconductor devices, the target including a first pair of periodic structures (FPPS) and a second pair of periodic structures (SPPS), each of the FPPS and the SPPS including a first edge, a second edge, a plurality of first periodic structures formed in a first area as part of a first layer and having a first pitch along a first pitch axis, the first pitch axis not being parallel to either of the first edge or second edge, and a plurality of second periodic structures formed in a second area as part of a second layer and having the first pitch along a second pitch axis, the second pitch axis being generally parallel to the first pitch axis.