Abstract: A ferroelectric nanoparticle capacitor-device comprises a pair of conductive elements electrically insulated from each other, and ferroelectric nanoparticles arranged between the conductive elements of the pair. The ferroelectric nanoparticles are adapted to provide at least three polarization states with different total ferroelectric polarizations.

Abstract: A ferroelectric nanoparticle capacitor-device comprises a pair of conductive elements electrically insulated from each other, and ferroelectric nanoparticles arranged between the conductive elements of the pair. The ferroelectric nanoparticles are adapted to provide at least three polarization states with different total ferroelectric polarizations.

Abstract: A field effect transistor has a negative capacitance gate structure. The field effect transistor comprises a channel and a gate dielectric arranged over the channel. The negative capacitance gate structure comprises a bottom electrode structure comprising a bottom electrode, a multi-domain structure, and a top electrode structure. The multi-domain structure comprises a multi-domain element arranged over the bottom electrode, the multi-domain element comprising a plurality of topological domains and at least one topological domain wall. The top electrode structure comprises a top electrode arranged over the multi-domain element. At least a section of the bottom electrode structure of the negative capacitance gate structure is arranged over the gate dielectric and adapted to be coupled to the channel through the gate dielectric.