Abstract: According to one embodiment, a pattern forming method includes forming a physical guide that includes a first predetermined pattern in a first region on a lower layer film, and includes a second predetermined pattern and a dummy pattern in a second region on the lower layer film, forming a block polymer inside the physical guide, making the block polymer microphase-separated to form a pattern having a first polymer section and a second polymer section, removing the second polymer section to form a hole pattern, and processing the lower layer film after removal of the second polymer section, with the physical guide and the first polymer section used as a mask. Shapes of the hole patterns in the first and the second predetermined patterns are transferred to the lower layer film. A shape of the hole pattern in the dummy pattern is not transferred to the lower layer film.

Abstract: According to one embodiment, a pattern formation method comprises forming a hard mask material on a processed film on a wiring, forming a guide layer on the hard mask material, forming a tetragonal opening in the guide layer, coating the opening with a block polymer, heating the block polymer to form a micro phase separation structure film in which first polymer parts and second polymer parts parallel to the wiring are alternately arranged, removing the second polymer part while leaving the first polymer part, processing the hard mask material with the guide layer and the first polymer part as a mask to form a first hole pattern in the hard mask material, and processing the processed film with the hard mask material as a mask to form a second hole pattern corresponding to the first hole pattern in the processed film.

Abstract: According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

Abstract: In accordance with an embodiment, a pattern formation method includes: forming, on a first substrate, a fabrication target film having first and second regions; selectively applying, onto the first region a self-assembly material of a plurality of components that are phase-separable by a thermal treatment; baking the self-assembly material to phase-separate the self-assembly material into the components; removing any one of the components to form a first pattern; applying a curable resin onto the second region of the fabrication target film; bringing a dented second substrate corresponding to an arbitrary pattern closer to and into contact with the curable resin so that the second substrate faces the curable resin; curing the curable resin; detaching the second substrate from the curable resin to form a second pattern in the curable resin; and using the first and the second patterns as masks to fabricate the fabrication target film.

Abstract: According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.

Abstract: A pattern forming method includes: forming a layer of a block copolymer, including at least two kinds of polymers, on a substrate; heating the block copolymer layer; irradiating UV light on the heated block copolymer layer; and supplying a developing solution to the UV light-irradiated block copolymer layer.

Abstract: According to one embodiment, a pattern formation method contains: forming first guides by changing a surface energy of an underlayer material by transferring a pattern of a photomask onto the underlayer material by exposure, and forming second guides by changing the surface energy of the underlayer material between the first guides by diffraction of exposure light generated from the exposure; applying a block copolymer containing a plurality of types of polymer block chains onto the underlayer material; and causing any one of the polymer block chains to form a pattern in accordance with the first and second guides by microphase separation of the block copolymer by a heat treatment.

Abstract: According to one embodiment, a pattern formation method includes: forming a first pattern in a first region on a substrate to be treated; coating a plurality of types of block copolymers which are different in composition ratio on a second region which is different from the first region; and forming in the second region, by a heat treatment, a second pattern including a plurality of types of structures based on the coated plurality of types of block copolymers.

Abstract: A semiconductor device manufacturing method includes: forming a first anti-reflective coating on a semiconductor wafer; forming a second anti-reflective coating on the first anti-reflective coating; forming a resist film on the second anti-reflective coating; selectively exposing the resist film to light; developing the resist film and the anti-reflective coatings after the light exposure; and processing the semiconductor wafer using as a mask a pattern of the resist film obtained by the development. The photosensitizer concentration of the first anti-reflective coating is higher than the photosensitizer concentration of the second anti-reflective coating.

Abstract: A semiconductor device manufacturing method includes: forming a foundation film on a semiconductor wafer; after forming the foundation film, forming a reaction layer of the semiconductor wafer and the foundation film therebetween; removing the foundation film and leaving the reaction layer on the semiconductor wafer; forming a resist film on the reaction layer; patterning the resist film; and using the patterned resist film as a mask to perform processing on the semiconductor wafer.

Abstract: A pattern forming method includes forming a first anti-reflection coating on a substrate, the substrate having an uneven surface; forming a second anti-reflection coating on the first anti-reflection coating, the first anti-reflection coating having an uneven surface, and the second anti-reflection coating planarizing the uneven surface of the first anti-reflection coating; forming an intermediate layer film on the second anti-reflection coating; forming a resist film on the intermediate-layer film; patterning the resist film to form a resist pattern; forming an intermediate-layer pattern by etching the intermediate-layer film using the resist pattern as a mask; and forming an under-layer pattern by etching the first and second anti-reflection coatings using the intermediate-layer pattern as a mask.

Abstract: According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.

Abstract: According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.