Abstract: Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere.

Abstract: Group III-nitride N-type doping techniques are described.

Abstract: Nano-spherical group III-nitride materials and methods of forming nano-spherical group III-nitride materials are described. Also described is a 1-dimensional LED or similar device formed from a single nano-rod of a nano-spherical group III-nitride material.

Abstract: One embodiment of the forming a nanocrystalline diamond-structured carbon layer on a silicon carbide layer comprises providing a silicon carbide layer in a reaction chamber and exposing the silicon carbide layer to a chlorine containing gas for an exposure time period to form a nanocrystalline diamond-structured carbon layer from the silicon carbide layer.

Abstract: Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere.

Abstract: A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.

Abstract: A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.

Abstract: Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.

Abstract: Embodiments of the invention generally relate to methods for forming Group III-V materials by a hydride vapor phase epitaxy (HVPE) process. In one embodiment, a method for forming a gallium nitride material on a substrate within a processing chamber is provided which includes heating a metallic source to form a heated metallic source, wherein the heated metallic source contains gallium, aluminum, indium, alloys thereof, or combinations thereof, exposing the heated metallic source to chlorine gas while forming a metallic chloride gas, exposing the substrate to the metallic chloride gas and a nitrogen precursor gas while forming a metal nitride layer on the substrate during the HVPE process. The method further provides exposing the substrate to chlorine gas during a pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the processing chamber is heated to about 200° C. or less during the pretreatment process.

Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.

Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.

Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.